Daniel G. Ouellette

Electrostatic carrier doping of GdTiO3/SrTiO3 interfaces

Heterostructures and superlattices consisting of a prototype Mott insulator, GdTiO3, and the band insulator SrTiO3 are grown by molecular beam epitaxy and show intrinsic electronic reconstruction, approximately ½ electron per surface unit cell at each GdTiO3/SrTiO3 interface. The sheet carrier densities in all structures containing more than one unit cell of SrTiO3 are independent of layer thicknesses and growth sequences, indicating that the mobile carriers are in a high concentration, two-dimensional electron gas bound to the interface. These carrier densities closely meet the electrostatic requirements for compensating the fixed charge at these polar interfaces. Based on the experimental results, insights into interfacial band alignments, charge distribution, and the influence of different electrostatic boundary conditions are obtained.

Low-dimensional Mott material: Transport in ultrathin epitaxial LaNiO3 films

Electrical resistivity and magnetotransport are explored for thin (3–30 nm), epitaxial LaNiO3 films. Films were grown on three different substrates to obtain LaNiO3 films that are coherently strained, with different signs and magnitude of film strain. It is shown that d-band transport is inhibited as the layers progress from compression to tension. The Hall coefficient is “holelike.” Increasing tensile strain causes the film resistivity to increase, causing strong localization to appear below a critical thickness.

Carrier-Controlled Ferromagnetism in SrTiO3

Magnetotransport and superconducting properties are investigated for uniformly La-doped SrTiO3 films and GdTiO3/SrTiO3 heterostructures, respectively. GdTiO3/SrTiO3 interfaces exhibit a high-density two-dimensional electron gas on the SrTiO3-side of the interface, while for the SrTiO3 films carriers are provided by the dopant atoms. Both types of samples exhibit ferromagnetism at low temperatures, as evidenced by a hysteresis in the magnetoresistance. For the uniformly doped SrTiO3 films, the Curie temperature is found to increase with doping and to coexist with superconductivity for carrier concentrations on the high-density side of the superconducting dome. The Curie temperature of the GdTiO3/SrTiO3 heterostructures scales with the thickness of the SrTiO3 quantum well. The results are used to construct a stability diagram for the ferromagnetic and superconducting phases of SrTiO3.

Quantum oscillations from a two-dimensional electron gas at a Mott/band insulator interface

We report on the magnetotransport properties of a prototype Mott insulator/band insulator perovskite heterojunction in magnetic fields up to 31 T and at temperatures between 360 mK and 10 K. Shubnikov-de Haas oscillations in the magnetoresistance are observed. The oscillations are two-dimensional in nature and are interpreted as arising from either a single, spin-split subband or two subbands. In either case, the electron system that gives rise to the oscillations represents only a fraction of the electrons in the space charge layer at the interface. The temperature dependence of the oscillations is used to extract an effective mass of ∼1 m e for the subband(s). The results are discussed in the context of the t2 g -states that form the bottom of the conduction band of SrTiO3.

Conduction-band edge and Shubnikov-de Haas effect in low-electron-density SrTiO3

The Shubnikov-de Haas effect is used to explore the conduction band edge of high mobility SrTiO3 films doped with La. The results largely confirm the earlier measurements by Uwe et al. [Jap. J. Appl. Phys. 24, Suppl. 24-2, 335 (1985)]. The band edge dispersion differs significantly from the predictions of ab initio electronic structure theory.

Dispersion in magnetostatic CoTaZr spin waveguides

Magnetostatic spin wave dispersion and loss are measured in micron scale spin waveguides in ferromagnetic metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion and up to three different modes are identified. Attenuation lengths of the order of 3 μm are several orders of magnitude shorter than that predicted from eddy currents in these thin wires.

Two-dimensional electron gas in a modulation-doped SrTiO3/Sr(Ti, Zr)O3 heterostructure

A two-dimensional electron gas (2DEG) in SrTiO3 is created via modulation doping by interfacing undoped SrTiO3 with a wider-band-gap material, SrTi1−xZrxO3, which is doped n-type with La. All layers are grown using hybrid molecular beam epitaxy. Using magnetoresistance measurements, we show that electrons are transferred into the SrTiO3, and a 2DEG is formed. In particular, Shubnikov-de Haas oscillations are shown to depend only on the perpendicular magnetic field. Experimental Shubnikov-de Haas oscillations are compared with calculations that assume multiple occupied subbands.

Dispersion and spin wave “tunneling” in nanostructured magnetostatic spin waveguides

Magnetostatic spin wave dispersion and loss are measured in micron scale spin waveguides in ferromagnetic, metallic CoTaZr. Results are in good agreement with model calculations of spin wave dispersion. The measured attenuation lengths, of the order of 3 μm, are several of orders of magnitude shorter than that predicted from eddy currents in these thin wires. Spin waves effectively “tunnel” through air gaps, produced by focused ion beam etching, as large as 1.5 μm.

High-density Two-Dimensional Small Polaron Gas in a Delta-Doped Mott Insulator

Heterointerfaces in complex oxide systems open new arenas in which to test models of strongly correlated material, explore the role of dimensionality in metal-insulator-transitions (MITs) and small polaron formation. Close to the quantum critical point Mott MITs depend on band filling controlled by random disordered substitutional doping. Delta-doped Mott insulators are potentially free of random disorder and introduce a new arena in which to explore the effect of electron correlations and dimensionality. Epitaxial films of the prototypical Mott insulator GdTiO3 are delta-doped by substituting a single (GdO)+1 plane with a monolayer of charge neutral SrO to produce a two-dimensional system with high planar doping density. Unlike metallic SrTiO3 quantum wells in GdTiO3 the single SrO delta-doped layer exhibits thermally activated DC and optical conductivity that agree in a quantitative manner with predictions of small polaron transport but with an extremely high two-dimensional density of polarons, ~7 × 1014 cm−2.

Gaps and pseudogaps in perovskite rare earth nickelates

We report on tunneling measurements that reveal the evolution of the quasiparticle state density in two rare earth perovskite nickelates, NdNiO3 and LaNiO3, that are close to a bandwidth controlled metal to insulator transition. We measure the opening of a sharp gap of ∼30 meV in NdNiO3 in its insulating ground state. LaNiO3, which remains a correlated metal at all practical temperatures, exhibits a pseudogap of the same order. The results point to both types of gaps arising from a common origin, namely, a quantum critical point associated with the T = 0 K metal-insulator transition. The results support theoretical models of the quantum phase transition in terms of spin and charge instabilities of an itinerant Fermi surface.