Mark J. W. Rodwell

Active and nonlinear wave propagation devices in ultrafast electronics and optoelectronics

We describe active and nonlinear wave propagation devices for generation and detection of (sub)millimeter wave and (sub)picosecond signals. Shock-wave nonlinear transmission lines (NLTLs) generate /spl sim/4-V step functions with less than 0.7-ps fall times. NLTL-gated sampling circuits for signal measurement have attained over 700-GHz bandwidth. Soliton propagation on NLTLs is used for picosecond impulse generation and broadband millimeter-wave frequency multiplication. Picosecond pulses can also be generated on traveling-wave structures loaded by resonant tunneling diodes. Applications include integration of photodetectors with sampling circuits for picosecond optical waveform measurements and instrumentation for millimeter-wave waveform and network (circuit) measurements both on-wafer and in free space. General properties of linear and nonlinear distributed devices and circuits are reviewed, including gain-bandwidth limits, dispersive and nondispersive propagation, shock-wave formation, and soliton propagation. >

Subpicosecond laser timing stabilization

The 0.25 Hz-25 kHz pulse timing fluctuations of a Nd:YAG CW-mode-locked laser are reduced from 20.6 ps to less than 0.30 ps rms by an electronic phase-lock loop. Stabilizer design considerations include the laser phase control characteristics, phase detector additive noise, and spurious detection of the laser amplitude noise by the loop phase detector. Applications include synchronization of multiple picosecond pulsed lasers, and synchronization of lasers and electronic signal sources in picosecond physical measurements. >

GaAs nonlinear transmission lines for picosecond pulse generation and millimeter-wave sampling

The GaAs nonlinear transmission line (NLTL) is a monolithic millimeter-wave integrated circuit consisting of a high-impedance transmission line loaded by reverse-biased Schottky contacts. The engineering of functional monolithic NLTLs is considered. Through generation of shock waves on the NLTL, the authors have generated electrical step functions with approximately 5 V magnitude and less than 1.4 ps fall time. Diode sampling bridges strobed by NLTL shock-wave generators have attained bandwidths approaching 300 GHz and have applications in instruments for millimeter-wave waveform and network measurements. The authors discuss the circuit design and diode design requirements for picosecond NLTL shock-wave generators and NLTL-driven sampling circuits. >

Blockage and directivity in 60 GHz wireless personal area networks: from cross-layer model to multihop MAC design

We present a cross-layer modeling and design approach for multigigabit indoor wireless personal area networks (WPANs) utilizing the unlicensed millimeter (mm) wave spectrum in the 60 GHz band. Our approach accounts for the following two characteristics that sharply distinguish mm wave networking from that at lower carrier frequencies. First, mm wave links are inherently directional: directivity is required to overcome the higher path loss at smaller wavelengths, and it is feasible with compact, low-cost circuit board antenna arrays. Second, indoor mm wave links are highly susceptible to blockage because of the limited ability to diffract around obstacles such as the human body and furniture. We develop a diffraction-based model to determine network link connectivity as a function of the locations of stationary and moving obstacles. For a centralized WPAN controlled by an access point, it is shown that multihop communication, with the introduction of a small number of relay nodes, is effective in maintaining network connectivity in scenarios where single-hop communication would suffer unacceptable outages. The proposed multihop MAC protocol accounts for the fact that every link in the WPAN is highly directional, and is shown, using packet level simulations, to maintain high network utilization with low overhead.

Submicron scaling of HBTs

The variation of heterojunction bipolar transistor (HBT) bandwidth with scaling is reviewed. High bandwidths are obtained by thinning the base and collector layers, increasing emitter current density, decreasing emitter contact resistivity, and reducing the emitter and collector junction widths. In mesa HBTs, minimum dimensions required for the base contact impose a minimum width for the collector junction, frustrating device scaling. Narrow collector junctions can be obtained by using substrate transfer or collector-undercut processes or, if contact resistivity is greatly reduced, by reducing the width of the base ohmic contacts in a mesa structure. HBTs with submicron collector junctions exhibit extremely high f/sub max/ and high gains in mm-wave ICs. Transferred-substrate HBTs have obtained 21 dB unilateral power gain at 100 GHz. If extrapolated at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 1.1 THz. f/sub max/ will be less than 1 THz if unmodeled electron transport physics produce a >20 dB/decade variation in power gain at frequencies above 110 GHz. Transferred-substrate HBTs have obtained 295 GHz f/sub T/. The substrate transfer process provides microstrip interconnects on a low-/spl epsiv//sub r/ polymer dielectric with a electroplated gold ground plane. Important wiring parasitics, including wiring capacitance, and ground via inductance are substantially reduced. Demonstrated ICs include lumped and distributed amplifiers with bandwidths to 85 GHz and per-stage gain-bandwidth products over 400 GHz, and master-slave latches operating at 75 GHz.

Monolithic Schottky-collector resonant tunnel diode oscillator arrays to 650 GHz

We report monolithic array oscillators incorporating Schottky-collector resonant tunnel diodes (SRTDs). In the SRTD, a 0.1-/spl mu/m width Schottky collector contact provides a greatly reduced device series resistance, resulting in an estimated 2.2 THz maximum frequency of oscillation. A 64-element oscillator array oscillated at 650 GHz while a 16-element array produced 28 /spl mu/W at 290 GHz.

Indoor Millimeter Wave MIMO: Feasibility and Performance

In this paper, we investigate spatial multiplexing at millimeter (mm) wave carrier frequencies for short-range indoor applications by quantifying fundamental limits in line-of-sight (LOS) environments and then investigating performance in the presence of multipath and LOS blockage. Our contributions are summarized as follows. For linear arrays with constrained form factor, an asymptotic analysis based on the properties of prolate spheroidal wave functions shows that a sparse array producing a spatially uncorrelated channel matrix effectively provides the maximum number of spatial degrees of freedom in a LOS environment, although substantial beamforming gains can be obtained by using denser arrays. This motivates our proposed mm-wave MIMO architecture, which utilizes arrays of subarrays to provide both directivity and spatial multiplexing gains. System performance is evaluated in a simulated indoor environment using a ray-tracing model that incorporates multipath effects and potential LOS blockage. Eigenmode transmission with waterfilling power allocation serves as a performance benchmark, and is compared to the simpler scheme of beamsteering transmission with MMSE reception and a fixed signal constellation. Our numerical results provide insight into the spatial variations of attainable capacity within a room, and the combinations of beamsteering and spatial multiplexing used in different scenarios.

Comprehensive digital correction of mismatch errors for a 400-msamples/s 80-dB SFDR time-interleaved analog-to-digital converter

Comprehensive digital calibration of a high-speed and high-resolution time-interleaved analog-to-digital converter (TIADC) is described. A channel transfer function, which incorporates all linear errors between analog input and digital output, is measured for each channel by applying a series of sinusoids. A set of finite-impulse response (FIR) filters designed by the weighted least squares principle provides frequency-dependent mismatch correction so that the spurious-free dynamic range (SFDR) is no longer limited by channel mismatches. A four-channel TIADC prototype with 14-bit resolution and 400-MHz aggregate sampling rate was built to verify the proposed correction method. Uncalibrated SFDR was below 50 dB. After mismatch correction with 61-tap FIR filters, 80 dB of SFDR was achieved up to /spl sim/175 MHz of input frequency.

Submicron transferred-substrate heterojunction bipolar transistors

We report submicron transferred-substrate AlInAs/GaInAs heterojunction bipolar transistors (HBTs). Devices with 0.4-/spl mu/m emitter and 0.4-/spl mu/m collector widths have 17.5 dB unilateral gain at 110 GHz. Extrapolating at -20 dB/decade, the power gain cutoff frequency f/sub max/ is 820 GHz. The high f/sub max/, results from the scaling of HBTs junction widths, from elimination of collector series resistance through the use of a Schottky collector contact, and from partial screening of the collector-base capacitance by the collector space charge.

Traveling-wave photodetectors

The authors propose and analyze the traveling-wave photodetector (TWPD), an edge-coupled photodetector that is capable of both a larger absolute bandwidth and a larger bandwidth-efficiency product than the waveguide photodetector (WGPD). The intrinsic RC bandwidth limitation is increased in the traveling-wave photodetector by providing for controlled transmission of the electrical wave down the device in parallel with the optical wave and by eliminating bandwidth-limiting electrical reflections. It is shown that 1- mu m wide, parallel-plate, GaAs/AlGaAs, p-i-n TWPD with open-circuit input termination has a 26% greater potential bandwidth-efficiency product than the comparable WGPD, while a TWPD with matched input termination actually has a worse bandwidth-efficiency product than the WGPD.<<ETX>>