Dave H. A. Blank

Critical thickness and orbital ordering in ultrathin La0.7Sr0.3MnO3 films

Detailed analysis of transport, magnetism, and x-ray absorption spectroscopy measurements on ultrathin La0.7Sr0.3MnO3 films with thicknesses from 3 to 70 unit cells resulted in the identification of a lower critical thickness for a nonmetallic nonferromagnetic layer at the interface with the SrTiO3 (001) substrate of only three unit cells (~12 A). Furthermore, linear-dichroism measurements demonstrate the presence of a preferred (x2-y2) in-plane orbital ordering for all layer thicknesses without any orbital reconstruction at the interface. A crucial requirement for the accurate study of these ultrathin films is a controlled growth process, offering the coexistence of layer-by-layer growth and bulklike magnetic/transport properties.

Enhanced surface diffusion through termination conversion during epitaxial SrRuO3 growth

During the initial growth of the ferromagnetic oxide SrRuO3 on TiO2-terminated SrTiO3, we observe a self-organized conversion of the terminating atomic layer from RuO2 to SrO. This conversion induces an abrupt change in growth mode from layer by layer to growth by step advancement, indicating a large enhancement of the surface diffusivity. This growth mode enables the growth of single-crystalline and single-domain thin films. Both conversion and the resulting growth mode enable the control of the interface properties in heteroepitaxial multilayer structures on an atomic level.

ZnIr2O4, a p-type transparent oxide semiconductor in the class of spinel zinc-d6-transition metal oxide

The authors report on the growth of spinel ZnMd62O4 M=Co, Rh, and Ir, a ρ-type wide band gap semiconductor by pulsed laser deposition. The band gap of these compounds is determined by the ligand field splitting in the subbands of the metallic d6 cation. Photoemission spectroscopy revealed that the valence band maximum is composed of occupied t2g 6 states. The observed band gap is increasing for higher quantum numbers, being as large as 3 eV for ZnIr2O4, which is expected from theoretical predictions. Grown in polycrystalline phase, films of these materials display high conductivity, well above 2 S cm−1.

Ferroelectric properties of epitaxial Pb(Zr,Ti)O3 thin films on silicon by control of crystal orientation

Crystalline Pb(Zr,Ti)O3 (PZT) thin films between metallic-oxide SrRuO3 (SRO) electrodes were prepared using pulsed laser deposition on CeO2/yttria-stabilized zirconia buffered silicon (001) substrates. Different deposition conditions for the initial layers of the bottom SRO electrode result in an orientation switch. Either (110)- or (001)-oriented SRO thin films are obtained and the PZT films deposited on the bottom electrode continued both growth directions. The ferroelectric characteristics of the SRO/PZT/SRO capacitors are found to be strongly dependent on their crystalline orientation: PZT (001)-oriented thin films showed stable, high quality ferroelectric response, while the remnant polarization of the PZT (110)-oriented thin films only show high response after multiple switching cycles.

Microporous Niobia-Silica Membrane with Very Low CO2 Permeability

A sol-gel-derived microporous ceramic membrane with an exceptionally low permeability for CO(2) from gaseous streams was developed and characterized. The sols were prepared from a mixture of niobium and silicon alkoxide precursors by acid-catalyzed synthesis. Microporous films were formed by coating asymmetric gamma-alumina disks with the polymeric sol (Si/Nb=3:1), followed by calcination at 500 degrees C. The membrane consists of a 150-nm-thick layer with a Si/Nb atomic ratio of about 1.5. The single-gas permeance of small gas molecules such as H(2), CH(4), N(2), and SF(6) decreases steadily with kinetic diameter. Hydrogen, helium, and carbon dioxide follow an activated transport mechanism through the membrane. The permeance of CO(2) in this membrane is much lower than that in pure silica, and its behavior deviates strongly from the general trend observed with the other gases. This is attributed to a relatively strong interaction between CO(2) and adsorption sites in the niobia-silica membrane.

Step-induced uniaxial magnetic anisotropy of La0.67Sr0.33MnO3 thin films

The magnetic anisotropy of epitaxial La0.67 Sr0.33 MnO3 (LSMO) thin films on vicinal, TiO2 -terminated SrTiO3 substrates is investigated. Atomic force microscopy shows a regular step-terrace structure on the LSMO surface which is a replication of the surface of the substrate. The films show in-plane uniaxial magnetic anisotropy at room temperature, with the easy axis along the step direction. At low temperature the films show biaxial crystalline anisotropy with easy axes along [110], and hard axes along the [100] direction of LSMO.

Characterization of epitaxial Pb(Zr,Ti)O3 thin films deposited by pulsed laser deposition on silicon cantilevers

This paper reports on the piezoelectric-microelectromechanical system micro-fabrication process and the behavior of piezoelectric stacks actuated silicon cantilevers. All oxide layers in the piezoelectric stacks, such as buffer-layer/bottom-electrode/film/top-electrode: YSZ/SrRuO3/Pb(Zr,Ti)3/SrRuO3, were grown epitaxially on the Si template of silicon-on-insulator substrates by pulsed laser deposition. By using an analytical model and finite element simulation, the initial bending of the cantilevers was calculated. These theoretical analyses are in good agreement with the experimental results which were determined using a white light interferometer. The dependences of the cantilever displacement, resonance frequency and quality factor on the cantilever geometry have been investigated using a laser-Doppler vibrometer. The tip displacement ranged from 0.03 to 0.42 µm V−1, whereas the resonance frequency and quality factor values changed from 1010 to 18.6 kHz and 614 to 174, respectively, for the cantilevers with lengths in the range of 100–800 µm. Furthermore, the effect of the conductive oxide electrodes on the stability of the piezoelectric displacement of the cantilevers has been studied.

Experimental investigation of electronic properties of buried heterointerfaces of LaAlO3 on SrTiO3

We have made very thin films of LaAlO3 on TiO2 terminated SrTiO3 and have measured the properties of the resulting interface in various ways. Transport measurements show a maximum sheet carrier density of 1016 cm-2 and a mobility around 104 cm2 V-1 s-1. In situ ultraviolet photoelectron spectroscopy (UPS) indicates that for these samples a finite density of states exists at the Fermi level. From the oxygen pressure dependence measured in both transport as well as the UPS, we detail, as reported previously by us, that oxygen vacancies play an important role in the creation of the charge carriers and that these vacancies are introduced by the pulsed laser deposition process used to make the heterointerfaces. Under the conditions studied the effect of LaAlO3 on the carrier density is found to be minimal.

Influence of substrate–film interface engineering on the superconducting properties of YBa2Cu3O7−δ

The atomic stacking sequence at the substrate-film interface plays an essential role in the heteroepitaxial growth of REBa2Cu3O7-d. During initial growth, the interface configuration influences the surface morphology and structural properties of the film, due to the formation of anti-phase boundaries (APBs) by coalescence of islands with different stacking sequences. In this study, the interface configuration is accurately controlled by both the terminating atomic layer of the SrTiO3 substrate and the stoichiometry of the first unit cell layer. Using this capability the network of APBs and, therefore, the in-plane ordering is tuned, allowing the study of its influence on the structural and electrical properties of the YBa2Cu3O7-d film. The critical temperature Tc is depressed by increase of the in-plane ordering, which strongly indicates that the presence of APBs in the sample favors the oxygen in-diffusion.

Magnetization reversal mechanism in La0.67Sr0.33MnO3 thin films on NdGaO3 substrates

The field angle dependence of the coercive field of La0.67Sr0.33MnO3 thin films grown epitaxially on NdGaO3 substrates with different crystallographic orientations was determined. All films show uniaxial anisotropy. The angle dependence of the coercivity is best described by a two-phase model, explaining the strong increase in the coercive field for increasing field angles, away from the easy axis direction, as well as the sharp decrease for angles close to the hard direction. This implies that magnetization reversal starts with the depinning of domain walls, analogous to the Kondorsky model. With increasing field the reversal in the domains is not abrupt, but is determined by the gradual displacement of the domain walls. These results are of significance for understanding and possibly engineering of the switching behavior of magnetic tunnel junctions.