David Chi

RTCVD oxide and N2 O anneal for top oxide of ONO film

Method of forming high K tantalum pentoxide Ta2O5 instead of ONO stacked films to increase coupling ratio and improve reliability for flash memory devices

Methods and arrangements for forming a single interpoly dielectric layer in a semiconductor device

Narrower erase distribution for flash memory by smaller poly grain size

Ammonia annealed and wet oxidized LPCVD oxide to replace ono films for high integrated flash memory devices

Nitrogen ion implanted amorphous silicon to produce oxidation resistant and finer grain polysilicon based floating gates

Light floating gate doping to improve tunnel oxide reliability

Method of in-situ cleaning for LPCVD teos pump

Mesh filter design for LPCVD TEOS exhaust system

Method to elimate silicide cracking for nand type flash memory devices by implanting a polish rate improver into the second polysilicon layer and polishing it