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Dive into the research topics where David Guzman is active.

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Featured researches published by David Guzman.


Journal of Applied Physics | 2014

Role of strain on electronic and mechanical response of semiconducting transition-metal dichalcogenide monolayers: An ab-initio study

David Guzman; Alejandro Strachan

We characterize the electronic structure and elasticity of monolayer transition-metal dichalcogenides MX2 (M  =  Mo, W, Sn, Hf and X  =  S, Se, Te) based on 2H and 1T structures using fully relativistic first principles calculations based on density functional theory. We focus on the role of strain on the band structure and band alignment across the series of materials. We find that strain has a significant effect on the band gap; a biaxial strain of 1% decreases the band gap in the 2H structures, by as a much as 0.2  eV in MoS2 and WS2, while increasing it for the 1T cases. These results indicate that strain is a powerful avenue to modulate their properties; for example, strain enables the formation of, otherwise impossible, broken gap heterostructures within the 2H class. These calculations provide insight and quantitative information for the rational development of heterostructures based on this class of materials accounting for the effect of strain.


Journal of Applied Physics | 2015

Stability and migration of small copper clusters in amorphous dielectrics

David Guzman; Nicolas Onofrio; Alejandro Strachan

We use density functional theory (DFT) to study the thermodynamic stability and migration of copper ions and small clusters embedded in amorphous silicon dioxide. We perform the calculations over an ensemble of statistically independent structures to quantify the role of the intrinsic atomic-level variability in the amorphous matrix affect the properties. The predicted formation energy of a Cu ion in the silica matrix is 2.7 ± 2.4 eV, significantly lower the value for crystalline SiO2. Interestingly, we find that Cu clusters of any size are energetically favorable as compared to isolated ions; showing that the formation of metallic clusters does not require overcoming a nucleation barrier as is often assumed. We also find a broad distribution of activation energies for Cu migration, from 0.4 to 1.1 eV. This study provides insights into the stability of nanoscale metallic clusters in silica of interest in electrochemical metallization cell memories and optoelectronics.


Journal of Applied Physics | 2017

First principles investigation of copper and silver intercalated molybdenum disulfide

David Guzman; Nicolas Onofrio; Alejandro Strachan

We characterize the energetics and atomic structures involved in the intercalation of copper and silver into the van der Waals gap of molybdenum disulfide as well as the resulting ionic and electronic transport properties using first-principles density functional theory. The intercalation energy of systems with formula (Cu,Ag)xMoS2 decreases with ion concentration and ranges from 1.2 to 0.8 eV for Cu; Ag exhibits a stronger concentration dependence from 2.2 eV for x = 0.014 to 0.75 eV for x = 1 (using the fcc metal as a reference). Partial atomic charge analysis indicates that approximately half an electron is transferred per metallic ion in the case of Cu at low concentrations and the ionicity decreases only slightly with concentration. In contrast, while Ag is only slightly less ionic than Cu for low concentrations, charge transfer reduces significantly to approximately 0.1 e for x = 1. This difference in ionicity between Cu and Ag correlates with their intercalation energies. Importantly, the predicted...


Journal of Chemical Physics | 2016

The dynamics of copper intercalated molybdenum ditelluride

Nicolas Onofrio; David Guzman; Alejandro Strachan

Layered transition metal dichalcogenides are emerging as key materials in nanoelectronics and energy applications. Predictive models to understand their growth, thermomechanical properties, and interaction with metals are needed in order to accelerate their incorporation into commercial products. Interatomic potentials enable large-scale atomistic simulations connecting first principle methods and devices. We present a ReaxFF reactive force field to describe molybdenum ditelluride and its interactions with copper. We optimized the force field parameters to describe the energetics, atomic charges, and mechanical properties of (i) layered MoTe2, Mo, and Cu in various phases, (ii) the intercalation of Cu atoms and small clusters within the van der Waals gap of MoTe2, and (iii) bond dissociation curves. The training set consists of an extensive set of first principles calculations computed using density functional theory (DFT). We validate the force field via the prediction of the adhesion of a single layer MoTe2 on a Cu(111) surface and find good agreement with DFT results not used in the training set. We characterized the mobility of the Cu ions intercalated into MoTe2 under the presence of an external electric field via finite temperature molecular dynamics simulations. The results show a significant increase in drift velocity for electric fields of approximately 0.4 V/Å  and that mobility increases with Cu ion concentration.


Journal of Applied Physics | 2017

Novel doping alternatives for single-layer transition metal dichalcogenides

Nicolas Onofrio; David Guzman; Alejandro Strachan

Successful doping of single-layer transition metal dichalcogenides (TMDs) remains a formidable barrier to their incorporation into a range of technologies. We use density functional theory to study doping of molybdenum and tungsten dichalcogenides with a large fraction of the periodic table. An automated analysis of the energetics, atomic and electronic structure of thousands of calculations results in insightful trends across the periodic table and points out promising dopants to be pursued experimentally. Beyond previously studied cases, our predictions suggest promising substitutional dopants that result in p-type transport and reveal interesting physics behind the substitution of the metal site. Doping with early transition metals (TMs) leads to tensile strain and a significant reduction in the bandgap. The bandgap increases and strain is reduced as the d-states are filled into the mid TMs; these trends reverse as we move into the late TMs. Additionally, the Fermi energy increases monotonously as the ...


Archive | 2014

Molecular Exploration Tool

Xueying Wang; Nicolas Onofrio; Alejandro Strachan; David Guzman

Density Functional Theory (DFT) which is based on quantum mechanics theory has been broadly used to compute the energy and the structure of molecules and solids. However, the DFT method is limited when running calculations for a large system and only thousands of atoms can be solved. Alternatively, Molecular Dynamics (MD) simulation can be used to investigate the properties of the atomic system for large systems in the classical mechanics approximation. When running the MD simulation, the electronic structure is approximated by Force Fields (FF) which can be parameterized against DFT calculations. Nevertheless, the accuracy of the MD results and the FF is suspicious for the scientists because of the variety and complexity of the FF. Hence, a free web-browser based tool has been developed to allow the user upload a force field, run MD simulations and compare the results with the DFT calculations. Users can select desired molecules and solids in the database, run MD simulation, plot the corresponding energies and visualize the atomic structures. So that users can find out if they can trust the FF results according to the comparison with DFT calculations.


Nature Materials | 2015

Atomic origin of ultrafast resistance switching in nanoscale electrometallization cells

Nicolas Onofrio; David Guzman; Alejandro Strachan


Nanoscale | 2016

Atomistic simulations of electrochemical metallization cells: mechanisms of ultra-fast resistance switching in nanoscale devices

Nicolas Onofrio; David Guzman; Alejandro Strachan


Physical Review Materials | 2017

Interactions between copper and transition metal dichalcogenides: A density functional theory study

Benjamin A. Helfrecht; David Guzman; Nicolas Onofrio; Alejandro Strachan


Archive | 2015

Multi-Scale Quantum Simulations of Conductive Bridging RAM

Michael Povolotskyi; Nicolas Onofrio; David Guzman; Alejandro Strachan; Gerhard Klimeck

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Gustavo Javier

University of California

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Mahbubul Islam

Pennsylvania State University

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