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Dive into the research topics where David Huy Trinh is active.

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Featured researches published by David Huy Trinh.


Applied Physics Letters | 2007

Dynamics of bound excitons versus thickness in freestanding GaN wafers grown by halide vapor phase epitaxy

Galia Pozina; Carl Hemmingsson; J. P. Bergman; David Huy Trinh; Lars Hultman; B. Monemar

The bound exciton recombination properties in freestanding GaN layers of various thicknesses grown by halide vapor phase epitaxy have been characterized by time-resolved spectroscopy. Improvement of the donor bound exciton (D0X) lifetime was observed with increasing GaN layer thickness up to ∼400μm, while for thicker layers the recombination time of D0X shows a tendency to saturate. The thickness-dependent behavior of the D0X decay can be understood in terms of competition between two nonradiative mechanisms: one of which is connected to structural defects, and consequently more important for thinner layers, while for layers with thickness above 400μm with low structural defect density the recombination time is limited by point defects such as impurities and vacancies.


Journal of Vacuum Science and Technology | 2007

Influence of the normalized ion flux on the constitution of alumina films deposited by plasma-assisted chemical vapor deposition

Denis Kurapov; Jennifer Reiss; David Huy Trinh; Lars Hultman; Jochen M. Schneider

Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl3–O2–Ar–H2 gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.


Journal of Vacuum Science and Technology | 2008

Experiments and modeling of dual reactive magnetron sputtering using two reactive gases

Tomas Kubart; David Huy Trinh; Lina Liljeholm; Lars Hultman; Hans Högberg; Tomas Nyberg; Sören Berg

Reactive sputtering from two elemental targets, aluminum and zirconium, with the addition of two reactive gases, oxygen and nitrogen, is studied experimentally as well as theoretically. The complex ...


Acta Materialia | 2007

Ta4AlC3: Phase determination, polymorphism and deformation

Per Eklund; Jens-Petter Palmquist; Jonas Höwing; David Huy Trinh; T. El-Raghy; Hans Högberg; Lars Hultman


Surface & Coatings Technology | 2009

Phase transformation in κ- and γ-Al2O3 coatings on cutting tool inserts

David Huy Trinh; K Back; Galia Pozina; H Blomqvist; T Selinder; M. Collin; I. Reineck; Lars Hultman; Hans Högberg


Thin Solid Films | 2008

Nanocomposite Al2O3–ZrO2 thin films grown by reactive dual radio-frequency magnetron sputtering

David Huy Trinh; Mikael Ottosson; M. Collin; I. Reineck; Lars Hultman; Hans Högberg


Journal of Vacuum Science and Technology | 2006

Radio frequency dual magnetron sputtering deposition and characterization of nanocomposite Al2O3–ZrO2 thin films

David Huy Trinh; Hans Högberg; Jon Andersson; M. Collin; I. Reineck; Ulf Helmersson; Lars Hultman


Thin Solid Films | 2008

Direct current magnetron sputtering deposition of nanocomposite alumina — zirconia thin films

David Huy Trinh; Tomas Kubart; Tomas Nyberg; Mikael Ottosson; Lars Hultman; Hans Högberg


Superlattices and Microstructures | 2008

Time-resolved spectroscopy of freestanding GaN layers grown by halide vapour phase epitaxy

Galia Pozina; Carl Hemmingsson; Peder Bergman; David Huy Trinh; Lars Hultman; B. Monemar


Scripta Materialia | 2009

Phase identification in γ- and κ-alumina coatings by cathodoluminescence

Galia Pozina; David Huy Trinh; Hans Högberg; M. Collin; I. Reineck; Lars Hultman

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