David Huy Trinh
Linköping University
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Publication
Featured researches published by David Huy Trinh.
Applied Physics Letters | 2007
Galia Pozina; Carl Hemmingsson; J. P. Bergman; David Huy Trinh; Lars Hultman; B. Monemar
The bound exciton recombination properties in freestanding GaN layers of various thicknesses grown by halide vapor phase epitaxy have been characterized by time-resolved spectroscopy. Improvement of the donor bound exciton (D0X) lifetime was observed with increasing GaN layer thickness up to ∼400μm, while for thicker layers the recombination time of D0X shows a tendency to saturate. The thickness-dependent behavior of the D0X decay can be understood in terms of competition between two nonradiative mechanisms: one of which is connected to structural defects, and consequently more important for thinner layers, while for layers with thickness above 400μm with low structural defect density the recombination time is limited by point defects such as impurities and vacancies.
Journal of Vacuum Science and Technology | 2007
Denis Kurapov; Jennifer Reiss; David Huy Trinh; Lars Hultman; Jochen M. Schneider
Alumina thin films were deposited onto tempered hot working steel substrates from an AlCl3–O2–Ar–H2 gas mixture by plasma-assisted chemical vapor deposition. The normalized ion flux was varied during deposition through changes in precursor content while keeping the cathode voltage and the total pressure constant. As the precursor content in the total gas mixture was increased from 0.8% to 5.8%, the deposition rate increased 12-fold, while the normalized ion flux decreased by approximately 90%. The constitution, morphology, impurity incorporation, and the elastic properties of the alumina thin films were found to depend on the normalized ion flux. These changes in structure, composition, and properties induced by normalized ion flux may be understood by considering mechanisms related to surface and bulk diffusion.
Journal of Vacuum Science and Technology | 2008
Tomas Kubart; David Huy Trinh; Lina Liljeholm; Lars Hultman; Hans Högberg; Tomas Nyberg; Sören Berg
Reactive sputtering from two elemental targets, aluminum and zirconium, with the addition of two reactive gases, oxygen and nitrogen, is studied experimentally as well as theoretically. The complex ...
Acta Materialia | 2007
Per Eklund; Jens-Petter Palmquist; Jonas Höwing; David Huy Trinh; T. El-Raghy; Hans Högberg; Lars Hultman
Surface & Coatings Technology | 2009
David Huy Trinh; K Back; Galia Pozina; H Blomqvist; T Selinder; M. Collin; I. Reineck; Lars Hultman; Hans Högberg
Thin Solid Films | 2008
David Huy Trinh; Mikael Ottosson; M. Collin; I. Reineck; Lars Hultman; Hans Högberg
Journal of Vacuum Science and Technology | 2006
David Huy Trinh; Hans Högberg; Jon Andersson; M. Collin; I. Reineck; Ulf Helmersson; Lars Hultman
Thin Solid Films | 2008
David Huy Trinh; Tomas Kubart; Tomas Nyberg; Mikael Ottosson; Lars Hultman; Hans Högberg
Superlattices and Microstructures | 2008
Galia Pozina; Carl Hemmingsson; Peder Bergman; David Huy Trinh; Lars Hultman; B. Monemar
Scripta Materialia | 2009
Galia Pozina; David Huy Trinh; Hans Högberg; M. Collin; I. Reineck; Lars Hultman