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Featured researches published by David James Coe.


IEEE Transactions on Electron Devices | 1989

An analysis of the dynamic behavior of field-limiting ring-passivation system

Martin K. Johnson; Alexander David Annis; Jeremy Noel Sandoe; David James Coe

The transient operation of field-limiting rings used for the passivation of power switching devices was studied. Results of experiment and fundamental modeling are presented. Since fundamental transient modeling is costly in computer time, an alternative simulation approach was used that involves a combination of off-state, on-state, and circuit modeling and reduces CPU times by two orders of magnitude. Computer simulations are used to illustrate the transient operation in detail and to indicate whether such behavior could ever lead to premature device breakdown. >


Archive | 2002

High voltage semiconductor device

David James Coe


Archive | 2008

High voltage semiconductor devices

David James Coe


Archive | 1982

Insulated gate field-effect transistors

David James Coe; Royce Lowis


Archive | 1988

High voltage semiconductor with integrated low voltage circuitry

Philip Harvey Bird; David James Coe; David Henry Paxman; Aart Gerrit Korteling


Archive | 1986

High voltage guard ring with variable width shallow portion

David James Coe


Archive | 1986

Semiconductor devices having field-relief regions

John Martin Shannon; John Alfred George Slatter; David James Coe


Archive | 1988

Method of manufacturing lateral IGFETS including reduced surface field regions

Carole Anne Fisher; David Henry Paxman; David James Coe


Archive | 1984

Manufacture of vertical insulated gate field effect transistors

David James Coe


Archive | 1991

Semiconductor device and a circuit suitable for use in an intelligent power switch

David James Coe; David Henry Paxman; Franciscus Adrianus Cornelis Maria Schoofs

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