Jeremy Noel Sandoe

Electronic Properties of a-SiN x :H Thin Film Diodes

With a semiconductor memory cell (particularly but not exclusively in a thin-film device) having a non-volatile memory transistor (Tm) as a driver transistor, an adequate difference in output signal (I) can be derived from the cell for the different states of the memory transistor (in spite of poor transistor characteristics,) thereby permitting the assembly of a large number of such memory cells in an array (100). Each memory cell includes a load (TI) driven by the non-volatile memory transistor (Tm). In the different memory states of the memory transistor (Tm) a difference in signal occurs at a node (30) between the memory transistor (Tm) and the load (TI). Each cell also includes a switch (To) which is coupled to the node (30) and switched from one output state to another by the signal at the node (30). The output state of the switch (To) provides the output signal (I) from the cell. Such an arrangement permits the memory transistor (Tm) and the output switch (To) to be optimized for their respective memory function and output function. The memory transistor may be of the dielectric-storage type (MNOST) or of the floating-gate type. In a thin-film circuit memory, the output switch may be a thin-film transistor (To) or a thin-film diode.

An analysis of the dynamic behavior of field-limiting ring-passivation system

The transient operation of field-limiting rings used for the passivation of power switching devices was studied. Results of experiment and fundamental modeling are presented. Since fundamental transient modeling is costly in computer time, an alternative simulation approach was used that involves a combination of off-state, on-state, and circuit modeling and reduces CPU times by two orders of magnitude. Computer simulations are used to illustrate the transient operation in detail and to indicate whether such behavior could ever lead to premature device breakdown. >