David R. Bowler

TIGHT-BINDING MODELLING OF MATERIALS

The tight-binding method of modelling materials lies between the very accurate, very expensive, ab initio methods and the fast but limited empirical methods. When compared with ab initio methods, tight-binding is typically two to three orders of magnitude faster, but suffers from a reduction in transferability due to the approximations made; when compared with empirical methods, tight-binding is two to three orders of magnitude slower, but the quantum mechanical nature of bonding is retained, ensuring that the angular nature of bonding is correctly described far from equilibrium structures. Tight-binding is therefore useful for the large number of situations in which quantum mechanical effects are significant, but the system size makes ab initio calculations impractical. In this paper we review the theoretical basis of the tight-binding method, and the range of approaches used to exactly or approximately solve the tight-binding equations. We then consider a representative selection of the huge number of systems which have been studied using tight-binding, identifying the physical characteristics that favour a particular tight-binding method, with examples drawn from metallic, semiconducting and ionic systems. Looking beyond standard tight-binding methods we then review the work which has been done to improve the accuracy and transferability of tight-binding, and moving in the opposite direction we consider the relationship between tight-binding and empirical models.

O(N) Methods in electronic structure calculations

Linear-scaling methods, or O(N) methods, have computational and memory requirements which scale linearly with the number of atoms in the system, N, in contrast to standard approaches which scale with the cube of the number of atoms. These methods, which rely on the short-ranged nature of electronic structure, will allow accurate, ab initio simulations of systems of unprecedented size. The theory behind the locality of electronic structure is described and related to physical properties of systems to be modelled, along with a survey of recent developments in real-space methods which are important for efficient use of high-performance computers. The linear-scaling methods proposed to date can be divided into seven different areas, and the applicability, efficiency and advantages of the methods proposed in these areas are then discussed. The applications of linear-scaling methods, as well as the implementations available as computer programs, are considered. Finally, the prospects for and the challenges facing linear-scaling methods are discussed.

Recent progress in linear scaling ab initio electronic structure techniques

We describe recent progress in developing linear scaling ab initio electronic structure methods, referring in particular to our highly parallel code CONQUEST. After reviewing the state of the field, we present the basic ideas underlying almost all linear scaling methods, and discuss specific practical details of the implementation. We also note the connection between linear scaling methods and embedding techniques.

Quantum engineering at the silicon surface using dangling bonds

Individual atoms and ions are now routinely manipulated using scanning tunnelling microscopes or electromagnetic traps for the creation and control of artificial quantum states. For applications such as quantum information processing, the ability to introduce multiple atomic-scale defects deterministically in a semiconductor is highly desirable. Here we use a scanning tunnelling microscope to fabricate interacting chains of dangling bond defects on the hydrogen-passivated silicon (001) surface. We image both the ground-state and the excited-state probability distributions of the resulting artificial molecular orbitals, using the scanning tunnelling microscope tip bias and tip-sample separation as gates to control which states contribute to the image. Our results demonstrate that atomically precise quantum states can be fabricated on silicon, and suggest a general model of quantum-state fabrication using other chemically passivated semiconductor surfaces where single-atom depassivation can be achieved using scanning tunnelling microscopy.

Recent progress with large‐scale ab initio calculations: the CONQUEST code

While the success of density functional theory (DFT) has led to its use in a wide variety of fields such as physics, chemistry, materials science and biochemistry, it has long been recognised that conventional methods are very inefficient for large complex systems, because the memory requirements scale as

Calculations for millions of atoms with density functional theory: linear scaling shows its potential

N^2

Stress relief as the driving force for self-assembled bi nanolines.

and the cpu requirements as

Self-assembled nanowires on semiconductor surfaces

N^3

Beyond Ehrenfest: correlated non-adiabatic molecular dynamics

(where

A comparison of linear scaling tight-binding methods

N