David Stolarek

Continuously tunable delay line based on SOI tapered Bragg gratings.

The realization of an integrated delay line using tapered Bragg gratings in a drop-filter configuration is presented. The device is fabricated on silicon-on-insulator (SOI) rib waveguides using a Deep-UV 248 nm lithography. The continuous delay tunability is achieved using the thermo-optical effect, showing experimentally that a tuning range of 450 ps can be obtained with a tuning coefficient of -51 ps/°C. Furthermore the system performance is considered, showing that an operation at a bit rate of 25 Gbit/s can be achieved, and could be extended to 80 Gbit/s with the addition of a proper dispersion compensation.

Deep-UV Technology for the Fabrication of Bragg Gratings on SOI Rib Waveguides

In this letter, we present a wafer level technology based on deep-ultraviolet lithography to fabricate Bragg gratings on silicon-on-insulator rib waveguides. The principle of the used double-patterning technique is presented, as well the influence of the process variation on the device performances. The fabricated Bragg gratings were characterized and compared to analogue structures patterned with electron-beam lithography.

Vertical optical ring resonators fully integrated with nanophotonic waveguides on silicon-on-insulator substrates.

We demonstrate full integration of vertical optical ring resonators with silicon nanophotonic waveguides on silicon-on-insulator substrates to accomplish a significant step toward 3D photonic integration. The on-chip integration is realized by rolling up 2D differentially strained TiO(2) nanomembranes into 3D microtube cavities on a nanophotonic microchip. The integration configuration allows for out-of-plane optical coupling between the in-plane nanowaveguides and the vertical microtube cavities as a compact and mechanically stable optical unit, which could enable refined vertical light transfer in 3D stacks of multiple photonic layers. In this vertical transmission scheme, resonant filtering of optical signals at telecommunication wavelengths is demonstrated based on subwavelength thick-walled microcavities. Moreover, an array of microtube cavities is prepared, and each microtube cavity is integrated with multiple waveguides, which opens up interesting perspectives toward parallel and multi-routing through a single-cavity device as well as high-throughput optofluidic sensing schemes.

Novel Ring Resonator Combining Strong Field Confinement With High Optical Quality Factor

Slot waveguide ring resonators appear promising candidates for several applications in silicon photonics. Strong field confinement, high device tunability, and low power consumption are beneficial properties compared with strip waveguides. Slot waveguide ring resonators suffer, however, from rather low optical quality factors due to optical losses. This letter proposes and experimentally demonstrates a novel concept based on a partially slotted ring and a strip-to-slot mode converter. An exceptional high quality factor of ~105 has been measured.

Integrated Dispersion Compensator Based on Apodized SOI Bragg Gratings

In this letter, we present the design and realization of an integrated drop filter with optimized tapered Bragg gratings for the compensation of the optical chromatic dispersion. An apodization profile for the gratings has been determined for an optimal reduction of the group delay ripple and the enhancement of the system performance. The apodization has been carried out varying the width of the grating trenches at the two ends with a sine profile and the principle has been experimentally demonstrated. The device permits a dispersion compensation of 480 ps/nm and an error-free detection of a DQPSK signal up to 30 Gbaud.

25 Gb/s Silicon Photonics Interconnect Using a Transmitter Based on a Node-Matched-Diode Modulator

In this article a nonreturn-to-zero data transmission of 25 Gb/s between silicon photonic transmitter and receiver units is demonstrated, where the transmitter is based on a silicon optical Fabry-Pérot modulator with a node-matched-diode geometry. This modulator type has a footprint of less than 100 μm2. On the receiver side, an integrated Ge-photo detector has been used. Mask tests according to the 100G ER4 standard have been performed and yielded error free data transmission.

High-Speed Fabry–Pérot Optical Modulator in Silicon With 3-μm Diode

A silicon optical modulator using a novel node-matched-diode geometry inside a Fabry-Pérot nanowaveguide resonator is presented. The diode length is only 3 μm. An analysis of the dynamic spectral transmission behavior is given. Non-return-to-zero data transmission of 10 Gb/s is demonstrated.

Partially slotted silicon ring resonator covered with electro-optical polymer

In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters.

Chirped Gratings on Tapered SOI Rib Waveguides For Dispersion Compensation

The fabrication and characterization of chirped Bragg gratings on tapered SOI rib waveguides is presented. A dispersion of 250 ps/nm over a bandwidth of 1 nm is demonstrated with 1 cm long gratings.

Spontaneous and stimulated Raman scattering in planar silicon waveguides

Raman scattering in planar silicon on insulator (SOI) waveguides with 2 μm width, 220 nm height and 2 cm length is investigated. A cw Nd:YAP laser at 1340.6 nm with 7 GHz FWHM spectral width is used as the pump source. A lensed fiber of 2.5 μm focus diameter is used to couple the pump laser into the waveguide. The coupling efficiency is estimated to be around 10%. Spontaneous Raman scattering is observed with as low as 2.5 mW pump power inside the waveguide. The spontaneous Raman spectrum is measured by an optical spectrum analyzer. The first order Raman peak is measured at around 1441.4 nm corresponding to a Raman shift of 15.6 THz, while the FWHM of Raman spectrum is measured as around 100 GHz. Maximum Raman output of around 90 pW is obtained by around 22 mW pump. The stimulated Raman gain coefficient is estimated as around 56 cm/GW from the relationship between spontaneous Raman output power and pump power. A temperature dependence of Raman frequency shift of about 0.6 GHz/K is measured. The spontaneous anti-Stokes Raman scattering output peak at 1253 nm is also observed with around 35 mW pump. Stimulated Raman amplification measurement is carried out with a SLED white light source as probe signal. With 35 mW pump power, around 0.6 dB gain has been determined with both pump and probe being TE polarized.