Sebastian Kupijai

Novel Ring Resonator Combining Strong Field Confinement With High Optical Quality Factor

Slot waveguide ring resonators appear promising candidates for several applications in silicon photonics. Strong field confinement, high device tunability, and low power consumption are beneficial properties compared with strip waveguides. Slot waveguide ring resonators suffer, however, from rather low optical quality factors due to optical losses. This letter proposes and experimentally demonstrates a novel concept based on a partially slotted ring and a strip-to-slot mode converter. An exceptional high quality factor of ~105 has been measured.

25 Gb/s Silicon Photonics Interconnect Using a Transmitter Based on a Node-Matched-Diode Modulator

In this article a nonreturn-to-zero data transmission of 25 Gb/s between silicon photonic transmitter and receiver units is demonstrated, where the transmitter is based on a silicon optical Fabry-Pérot modulator with a node-matched-diode geometry. This modulator type has a footprint of less than 100 μm2. On the receiver side, an integrated Ge-photo detector has been used. Mask tests according to the 100G ER4 standard have been performed and yielded error free data transmission.

High-Speed Fabry–Pérot Optical Modulator in Silicon With 3-μm Diode

A silicon optical modulator using a novel node-matched-diode geometry inside a Fabry-Pérot nanowaveguide resonator is presented. The diode length is only 3 μm. An analysis of the dynamic spectral transmission behavior is given. Non-return-to-zero data transmission of 10 Gb/s is demonstrated.

Silicon photonics for 100 Gbit/s intra-data center optical interconnects

We report on an ultra-compact co-integrated transmitter and receiver in SiGe BiCMOS technology for short reach optical interconnects. A fully integrated EPIC transceiver chip on silicon photonics technology is described. The chip integrates all photonic and electronic devices for an electro-optic transceiver and has been designed to be testable on wafer-scale. A node-matched diode modulator based on carrier injection is a key building block in the chip design. Its operation performance is presented with respect to insertion loss, signal-to-noise-ratio and power consumption at a 25.78125 Gbit/s in NRZ operation. A novel SiGe based photodetector exhibits a -3 dB bandwidth of up to 70 GHz and a responsivity of >1 A/W. Details are given about the process technology of co-integration of photonic and electronic integrated circuits using both silicon-on-insulator and bulk silicon. The implemented co-integration process requires only few additional process steps, leading to only a slight increase in complexity compared to conventional CMOS and BiCMOS baselines.

Partially slotted silicon ring resonator covered with electro-optical polymer

In this work, we present for the first time a partially slotted silicon ring resonator (PSRR) covered with an electro-optical polymer (Poly[(methyl methacrylate)-co-(Disperse Red 1 acrylate)]). The PSRR takes advantage of both a highly efficient vertical slot waveguide based phase shifter and a low loss strip waveguide in a single ring. The device is realized on 200 mm silicon-on-insulator wafers using 248 nm DUV lithography and covered with the electro-optic polymer in a post process. This silicon-organic hybrid ring resonator has a small footprint, high optical quality factor, and high DC device tunability. A quality factor of up to 105 and a DC device tunability of about 700 pm/V is experimentally demonstrated in the wavelength range of 1540 nm to 1590 nm. Further, we compare our results with state-of-the-art silicon-organic hybrid devices by determining the poling efficiency. It is demonstrated that the active PSRR is a promising candidate for efficient optical switches and tunable filters.

25 Gb/s data transmission with a node-matched-diode silicon modulator

NRZ data transmission of 25 Gb/s is demonstrated using an ultra-small silicon optical modulator based on a node-matched-diode geometry. Data transmission via an exclusively silicon photonics optical transmission line is presented including an integrated Ge-photodetector.

Method for comprehensive dynamic spectral characterization of wavelength dependent modulators

We present a method to simultaneously determine the temporal and spectral dynamics of modulator devices that utilize spectral changes during modulation operation. For this purpose, a series of signal traces at different wavelengths is recorded.

Silicon photonics interconnect based on ultra-small scalable components for multi-channel optical transceivers

A silicon photonics based fiber interconnect is presented including an integrated node-matched-diode modulator and Ge-photo detector. Due to very small footprints, a single channel 25 Gb/s non-return-to-zero data rate corresponds to a photonic bandwidth density of about 0.5 Tb/(s·mm2).

18 dB cw Raman on-off Gain in Silicon-On-Insulator Nanowire Waveguide Laser Amplifiers

Optical cw Raman gain of 18.4dB in SOI-nano-rib waveguides was obtained at 45mW internal pump power. Nonlinear on-off-gain increase at about 30mW pump power indicates that the Raman amplifier approaches the lasing threshold.

Silicon optical modulator with 3 µm diode

A silicon optical modulator using a novel node-matched-diode geometry is presented. The diode length is only 3 μm. NRZ data transmission of 10 Gb/s is demonstrated. According to the frequency response, 28 Gb/s are feasible.