Deirdre L. Olynick

Nanoscale molecular-switch devices fabricated by imprint lithography

Nanoscale molecular-electronic devices comprising a single molecular monolayer of bistable [2]rotaxanes sandwiched between two 40-nm metal electrodes were fabricated using imprint lithography. Bistable current–voltage characteristics with high on–off ratios and reversible switching properties were observed. Such devices may function as basic elements for future ultradense electronic circuitry.

Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography

We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current-gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.

Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block Copolymers

Directed self-assembly (DSA) of block copolymers (BCPs), either by selective wetting of surface chemical prepatterns or by graphoepitaxial alignment with surface topography, has ushered in a new era for high-resolution nanopatterning. These pioneering approaches, while effective, require expensive and time-consuming lithographic patterning of each substrate to direct the assembly. To overcome this shortcoming, nanoimprint molds--attainable via low-cost optical lithography--were investigated for their potential to be reusable and efficiently template the assembly of block copolymers (BCPs) while under complete confinement. Nanoimprint directed self-assembly conveniently avoids repetitive and expensive chemical or topographical prepatterning of substrates. To demonstrate this technique for high-resolution nanofabrication, we aligned sub-10 nm resolution nanopatterns using a cylinder-forming, organic-inorganic hybrid block copolymer, polystyrene-block-polydimethylsiloxane (PS-b-PDMS). Nanopatterns derived from oxidized PDMS microdomains were successfully transferred into the underlying substrate using plasma etching. In the development phase of this procedure, we investigated the role of mold treatments and pattern geometries as DSA of BCPs are driven by interfacial chemistry and physics. In the optimized route, silicon molds treated with PDMS surface brushes promoted rapid BCP alignment and reliable mold release while appropriate mold geometries provided a single layer of cylinders and negligible residual layers as required for pattern transfer. Molds thus produced were reusable to the same efficacy between nanoimprints. We also demonstrated that shear flow during the nanoimprint process enhanced the alignment of the BCP near open edges, which may be engineered in future schemes to control the BCP microdomain alignment kinetics during DSA.

Nanofabrication and diffractive optics for high-resolution x-ray applications

Short wavelength x-ray radiation microscopy is well suited for a number of material and life science studies. The x-ray microscope (XM1) at the Advanced Light Source Synchrotron in Berkeley, California uses two diffractive Fresnel zone plate lenses. The first is a large condenser lens, which collects soft x-ray radiation from a bending magnet, focuses it, and serves as a linear monochromator. The second is the objective zone plate lens, which magnifies the image of the specimen onto a high-efficiency charge coupled device detector. The objective lens determines the numerical aperture and ultimate resolution. New objective lens zone plates with a minimum linewidth of 25 nm and excellent linewidth control have been fabricated using Berkeley Lab’s 100 keV Nanowriter electron beam lithography tool, a calixarene high-resolution negative resist, and gold electroplating. Although the condenser zone plate is less critical to the resolution of the instrument, its efficiency determines the flux on the sample and ul...

Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites

We present a novel fabrication method for incorporating nanometer to micrometer scale few-layer graphene (FLG) features onto substrates with electrostatic exfoliation. We pattern highly oriented pyrolytic graphite using standard lithographic techniques and subsequently, in a single step, exfoliate and transfer-print the prepatterned FLG features onto a silicon wafer using electrostatic force. We have successfully demonstrated the exfoliation/printing of 18 nm wide FLG nanolines and periodic arrays of 1.4 mum diameter pillars. Furthermore, we have fabricated graphene nanoribbon transistors using the patterned graphene nanoline. Our electrostatic force assisted exfoliation/print process does not need additional adhesion layers and could be stepped and repeated to deliver the prepatterned graphitic material over wafer-sized areas and allows the construction of graphene-based integrated circuits.

High aspect ratio sub-15 nm silicon trenches from block copolymer templates.

High-aspect-ratio sub-15-nm silicon trenches are fabricated directly from plasma etching of a block copolymer mask. A novel method that combines a block copolymer reconstruction process and reactive ion etching is used to make the polymer mask. Silicon trenches are characterized by various methods and used as a master for subsequent imprinting of different materials. Silicon nanoholes are generated from a block copolymer with cylindrical microdomains oriented normal to the surface.

20-nm-resolution Soft x-ray microscopy demonstrated by use of multilayer test structures

A spatial resolution of 20 nm is demonstrated at 2.07-nm wavelength by use of a soft x-ray microscope based on Fresnel zone plate lenses and partially coherent illumination. Nanostructural test patterns, formed by sputtered multilayer coatings and transmission electron microscopy thinning techniques, provide clear experimental results.

Interface Segregating Fluoralkyl-Modified Polymers for High-Fidelity Block Copolymer Nanoimprint Lithography

Block copolymer (BCP) lithography is a powerful technique to write periodic arrays of nanoscale features into substrates at exceptionally high densities. In order to place these features at will on substrates, nanoimprint offers a deceptively clear path toward high throughput production: nanoimprint molds are reusable, promote graphoepitaxial alignment of BCP microdomains within their topography, and are efficiently aligned with respect to the substrate using interferometry. Unfortunately, when thin films of BCPs are subjected to thermal nanoimprint, there is an overwhelming degree of adhesion at the mold-polymer interface, which compromises the entire process. Here we report the synthesis of additives to mitigate adhesion based on either PS or PDMS with short, interface-active fluoroalkyl chains. When blended with PS-b-PDMS BCPs and subjected to a thermal nanoimprint, fluoroalkyl-modified PS in particular is observed to substantially reduce film adhesion to the mold, resulting in a nearly defect-free nanoimprint. Subsequent lithographic procedures revealed excellent graphoepitaxial alignment of sub-10 nm BCP microdomains, a critical step toward lower-cost, high-throughput nanofabrication.

Electron-beam exposure mechanisms in hydrogen silsesquioxane investigated by vibrational spectroscopy and in situ electron-beam-induced desorption

Hydrogen Silsesquioxane (HSQ) is used as a high-resolution resist with resolution down below 10nm half-pitch. This material or materials with related functionalities could have widespread impact in nanolithography and nanoscience applications if the exposure mechanism was understood and instabilities controlled. Here we have directly investigated the exposure mechanism using vibrational spectroscopy (both Raman and Fourier transform Infrared) and electron beam desorption spectrocscopy (EBDS). In the non-networked HSQ system, silicon atoms sit at the corners of a cubic structure. Each silicon is bonded to a hydrogen atom and bridges 3 oxygen atoms (formula: HSiO3/2). For the first time, we have shown, via changes in the Si-H2 peak at ~;;2200 cm -1 in the Raman spectra and the release of SiHx products in EBID, that electron-bam exposed materials crosslinks via a redistribution reaction. In addition, we observe the release of significantly more H2 than SiH2 during EBID, which is indicative of additional reaction mechanisms. Additionally, we compare the behavior of HSQ in response to both thermal and electron-beam induced reactions.

Super-selective cryogenic etching for sub-10 nm features

Plasma etching is a powerful technique for transferring high-resolution lithographic masks into functional materials. Significant challenges arise with shrinking feature sizes, such as etching with thin masks. Traditionally this has been addressed with hard masks and consequently additional costly steps. Here we present a pathway to high selectivity soft mask pattern transfer using cryogenic plasma etching towards low-cost high throughput sub-10 nm nanofabrication. Cryogenic SF(6)/O(2) gas chemistry is studied for high fidelity, high selectivity inductively coupled plasma etching of silicon. Selectivity was maximized on large features (400 nm-1.5 μm) with a focus on minimizing photoresist etch rates. An overall anisotropic profile with selectivity around 140:1 with a photoresist mask for feature size 1.5 μm was realized with this clean, low damage process. At the deep nanoscale, selectivity is reduced by an order of magnitude. Despite these limits, high selectivity is achieved for anisotropic high aspect ratio 10 nm scale etching with thin polymeric masks. Gentler ion bombardment resulted in planar-dependent etching and produced faceted sub-100 nm features.