Xiaogan Liang

Formation of Bandgap and Subbands in Graphene Nanomeshes with Sub-10 nm Ribbon Width Fabricated via Nanoimprint Lithography

We fabricated hexagonal graphene nanomeshes (GNMs) with sub-10 nm ribbon width. The fabrication combines nanoimprint lithography, block-copolymer self-assembly for high-resolution nanoimprint template patterning, and electrostatic printing of graphene. Graphene field-effect transistors (GFETs) made from GNMs exhibit very different electronic characteristics in comparison with unpatterned GFETs even at room temperature. We observed multiplateaus in the drain current-gate voltage dependence as well as an enhancement of ON/OFF current ratio with reduction of the average ribbon width of GNMs. These effects are attributed to the formation of electronic subbands and a bandgap in GNMs. Such mesoscopic graphene structures and the nanofabrication methods could be employed to construct future electronic devices based on graphene superlattices.

Nanogap Detector Inside Nanofluidic Channel for Fast Real-Time Label-Free DNA Analysis

We report fabrication and characterization of a novel real-time, label-free DNA detector, that uses a long nanofluidic channel to stretch a DNA strand and a nanogap detector (with a gap as small as 9 nm) inside the channel to measure the electrical conduction perpendicular to the DNA backbone as it moves through the gap. We have observed electrical signals caused by 1.1 kilobase-pair (kbp) double-stranded (ds)-DNA passing through the gap in the nanogap detectors with a gap equal to or less than 13 nm.

Enhancement of Photovoltaic Response in Multilayer MoS2 Induced by Plasma Doping

Layered transition-metal dichalcogenides hold promise for making ultrathin-film photovoltaic devices with a combination of excellent photovoltaic performance, superior flexibility, long lifetime, and low manufacturing cost. Engineering the proper band structures of such layered materials is essential to realize such potential. Here, we present a plasma-assisted doping approach for significantly improving the photovoltaic response in multilayer MoS2. In this work, we fabricated and characterized photovoltaic devices with a vertically stacked indium tin oxide electrode/multilayer MoS2/metal electrode structure. Utilizing a plasma-induced p-doping approach, we are able to form p-n junctions in MoS2 layers that facilitate the collection of photogenerated carriers, enhance the photovoltages, and decrease reverse dark currents. Using plasma-assisted doping processes, we have demonstrated MoS2-based photovoltaic devices exhibiting very high short-circuit photocurrent density values up to 20.9 mA/cm(2) and reasonably good power-conversion efficiencies up to 2.8% under AM1.5G illumination, as well as high external quantum efficiencies. We believe that this work provides important scientific insights for leveraging the optoelectronic properties of emerging atomically layered two-dimensional materials for photovoltaic and other optoelectronic applications.

Sub-10 nm Nanofabrication via Nanoimprint Directed Self-Assembly of Block Copolymers

Directed self-assembly (DSA) of block copolymers (BCPs), either by selective wetting of surface chemical prepatterns or by graphoepitaxial alignment with surface topography, has ushered in a new era for high-resolution nanopatterning. These pioneering approaches, while effective, require expensive and time-consuming lithographic patterning of each substrate to direct the assembly. To overcome this shortcoming, nanoimprint molds--attainable via low-cost optical lithography--were investigated for their potential to be reusable and efficiently template the assembly of block copolymers (BCPs) while under complete confinement. Nanoimprint directed self-assembly conveniently avoids repetitive and expensive chemical or topographical prepatterning of substrates. To demonstrate this technique for high-resolution nanofabrication, we aligned sub-10 nm resolution nanopatterns using a cylinder-forming, organic-inorganic hybrid block copolymer, polystyrene-block-polydimethylsiloxane (PS-b-PDMS). Nanopatterns derived from oxidized PDMS microdomains were successfully transferred into the underlying substrate using plasma etching. In the development phase of this procedure, we investigated the role of mold treatments and pattern geometries as DSA of BCPs are driven by interfacial chemistry and physics. In the optimized route, silicon molds treated with PDMS surface brushes promoted rapid BCP alignment and reliable mold release while appropriate mold geometries provided a single layer of cylinders and negligible residual layers as required for pattern transfer. Molds thus produced were reusable to the same efficacy between nanoimprints. We also demonstrated that shear flow during the nanoimprint process enhanced the alignment of the BCP near open edges, which may be engineered in future schemes to control the BCP microdomain alignment kinetics during DSA.

Stable few-layer MoS2 rectifying diodes formed by plasma-assisted doping

We present a method for making stable MoS2 rectifying diodes using selected-area plasma treatment. The transport and X-ray photoelectron spectroscopic characterizations of MoS2 transistors treated with different plasmas confirm that the rectifying characteristics of MoS2 diodes are attributed to plasma-induced p-doping and p-n junctions in MoS2. Such plasma-doped diodes exhibit high forward/reverse current ratios (∼104 for SF6-treated diodes) and a superior long-term stability. They can play an important role in the development of nanoelectronic devices. In addition, the presented plasma-assisted doping process could be also used for making ambipolar MoS2 transistors and functionalizing other emerging two-dimensional materials.

MoS2 Transistors Fabricated via Plasma-Assisted Nanoprinting of Few-Layer MoS2 Flakes into Large-Area Arrays

Large-area few-layer-MoS2 device arrays are desirable for scale-up applications in nanoelectronics. Here we present a novel approach for producing orderly arranged, pristine few-layer MoS2 flakes, which holds significant potential to be developed into a nanomanufacturing technology that can be scaled up. We pattern bulk MoS2 stamps using lithographic techniques and subsequently transfer-print prepatterned MoS2 features onto pristine and plasma-charged SiO2 substrates. Our work successfully demonstrates the transfer printing of MoS2 flakes into ordered arrays over cm(2)-scale areas. Especially, the MoS2 patterns printed on plasma-charged substrates feature a regular edge profile and a narrow distribution of MoS2 flake thicknesses (i.e., 3.0 ± 1.9 nm) over cm(2)-scale areas. Furthermore, we experimentally show that our plasma-assisted printing process can be generally used for producing other emerging atomically layered nanostructures (e.g., graphene nanoribbons). We also demonstrate working n-type transistors made from printed MoS2 flakes that exhibit excellent properties (e.g., ON/OFF current ratio 10(5)-10(7), field-effect mobility on SiO2 gate dielectrics 6 to 44 cm(2)/(V s)) as well as good uniformity of such transistor parameters over a large area. Finally, with additional plasma treatment processes, we also show the feasibility of creation of p-type transistors as well as pn junctions in MoS2 flakes. This work lays an important foundation for future scale-up nanoelectronic applications of few-layer-MoS2 micro- and nanostructures.

Electrostatic Force Assisted Exfoliation of Prepatterned Few-Layer Graphenes into Device Sites

We present a novel fabrication method for incorporating nanometer to micrometer scale few-layer graphene (FLG) features onto substrates with electrostatic exfoliation. We pattern highly oriented pyrolytic graphite using standard lithographic techniques and subsequently, in a single step, exfoliate and transfer-print the prepatterned FLG features onto a silicon wafer using electrostatic force. We have successfully demonstrated the exfoliation/printing of 18 nm wide FLG nanolines and periodic arrays of 1.4 mum diameter pillars. Furthermore, we have fabricated graphene nanoribbon transistors using the patterned graphene nanoline. Our electrostatic force assisted exfoliation/print process does not need additional adhesion layers and could be stepped and repeated to deliver the prepatterned graphitic material over wafer-sized areas and allows the construction of graphene-based integrated circuits.

Air bubble formation and dissolution in dispensing nanoimprint lithography

We report an experimental and theoretical study of two most critical yet still to-be-answered issues in dispensing-based nanoimprint lithography (D-NIL): air bubble formation and absorption, and discuss their impact on NIL yield and throughput. Using real-time observation via video, we found two different mechanisms for air bubble formation (feature pinning and multi-droplet encircling), and studied the dynamic behaviour of the air absorption and air bubble shrinking under different conditions. Furthermore, we developed theoretical models and simulation programs of the air absorption and bubble shrinking based on molecular diffusion theory and hydrodynamics. We compared these models with experiments, and found excellent agreement. Our study shows that the key factors that affect the air dissolution time (and hence the air bubble shrinking time) are air bubble initial size, imprinting pressure, air solubility, and resist residue layer thickness. One of our key conclusions from the study, which has significant practical importance, is that although the air in a bubble can be completely dissolved in a resist liquid as long as the bubble is smaller than a certain size, the air absorption time might be too long for the dispensing-NIL operating in atmosphere or poor vacuum to have a necessary throughput in mass manufacturing.

Multibit Data Storage States Formed in Plasma-Treated MoS2 Transistors

New multibit memory devices are desirable for improving data storage density and computing speed. Here, we report that multilayer MoS2 transistors, when treated with plasmas, can dramatically serve as low-cost, nonvolatile, highly durable memories with binary and multibit data storage capability. We have demonstrated binary and 2-bit/transistor (or 4-level) data states suitable for year-scale data storage applications as well as 3-bit/transistor (or 8-level) data states for day-scale data storage. This multibit memory capability is hypothesized to be attributed to plasma-induced doping and ripple of the top MoS2 layers in a transistor, which could form an ambipolar charge-trapping layer interfacing the underlying MoS2 channel. This structure could enable the nonvolatile retention of charged carriers as well as the reversible modulation of polarity and amount of the trapped charge, ultimately resulting in multilevel data states in memory transistors. Our Kelvin force microscopy results strongly support this hypothesis. In addition, our research suggests that the programming speed of such memories can be improved by using nanoscale-area plasma treatment. We anticipate that this work would provide important scientific insights for leveraging the unique structural property of atomically layered two-dimensional materials in nanoelectronic applications.

High fidelity fabrication of microlens arrays by nanoimprint using conformal mold duplication and low-pressure liquid material curing

The authors present a novel hyperfidelity fabrication method for microlens arrays. The method consists of the steps of (a) fabrication of a sacrificial master mold of a microlens array in a soft polymer by photolithography and thermal reflow, (b) conformal duplication of a daughter mold of complementary patterns in a hard material by dispensing an UV-curable material liquid on top of the polymer mold, planarizing the liquid with a flat quartz substrate, and curing the material, and (c) fabrication of microlens array using the hard daughter mold and nanoimprinting with an UV-curable lens material. This method has several advantages over conventional fabrication methods of microlens arrays including hyperfidelity, low cost, and high throughput.