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Featured researches published by Delfo Nunziato Sanfilippo.


IEEE Electron Device Letters | 2008

Crosstalk Characterization in Geiger-Mode Avalanche Photodiode Arrays

Emilio Sciacca; Giovanni Condorelli; S. Aurite; S. Lombardo; M. Mazzillo; Delfo Nunziato Sanfilippo; G. Fallica; E. Rimini

Following our work on Geiger-mode avalanche photodiode arrays, we have recently been dealing with the crosstalk issue in newly developed dense arrays with a minimum distance between pixel centers of 84 mum. In this paper, we present our crosstalk measurement approach, including the experimental setup and the offline calculation methods. Different characterizations of the crosstalk probability PCT versus capacitance have been performed to extrapolate the PCT when no measurement setup loads the pixels. We also present results regarding the crosstalk probability versus pixel distance and bias. Moreover, by adopting a slightly different approach, the probability density decay time has been measured to investigate about crosstalk origin.


nuclear science symposium and medical imaging conference | 2012

Timing performance comparison of P-on-N and N-on-P silicon photomultipliers

Ruud Vinke; Jung Yeol Yeom; Massimo Mazzillo; Delfo Nunziato Sanfilippo; A. Piana; Craig S. Levin

We have investigated the timing performance of P-on-N and N-on-P silicon photomultipliers (SiPM) in light of their use in time-of-flight (TOF) positron emission tomography (PET) detectors. Polished 3 mm × 3 mm × 5 mm and 3 mm × 3 mm × 20 mm LYSO:Ce scintillators were coupled to STmicroelectronics P-on-N and N-on-P SiPMs. The SiPMs were read out with low-noise RF transimpedance amplifiers and fed to a waveform digitizer for offline time pickoff analysis. For the P-on-N devices coincidence resolving times (CRTs) of 234 ps and 189 ps FWHM were obtained with the 3 mm × 3 mm × 20 mm and 3 mm × 3 mm × 5 mm crystals, respectively. For the Non-P devices CRTs of 280 ps and 214 ps FWHM, respectively, were obtained with above crystal types. The P-on-N devices are promising for TOF-PET due to their high photon detection efficiency (PDE) and low transit time spread (TTS).


Archive | 2009

GEIGER-MODE PHOTODIODE WITH INTEGRATED AND ADJUSTABLE QUENCHING RESISTOR, PHOTODIODE ARRAY, AND MANUFACTURING METHOD THEREOF

Delfo Nunziato Sanfilippo; M. Mazzillo


Archive | 2009

Array of mutually isolated, geiger-mode, avalanche photodiodes and manufacturing method thereof

Delfo Nunziato Sanfilippo; Piero Giorgio Fallica


Archive | 2010

Geiger-mode photodiode with integrated and JFET-effect-adjustable quenching resistor, photodiode array, and corresponding manufacturing method

Delfo Nunziato Sanfilippo; M. Mazzillo; Piero Giorgio Fallica


Archive | 2009

Array of mutually insulated geiger-mode avalanche photodiodes, and corresponding manufacturing process

Delfo Nunziato Sanfilippo; Emilio Antonio Sciacca; Piero Giorgio Fallica; S. Lombardo


Archive | 2011

MULTI PIXEL PHOTO DETECTOR ARRAY OF GEIGER MODE AVALANCHE PHOTODIODES

M. Mazzillo; Delfo Nunziato Sanfilippo; G. Condorelli


Archive | 2011

METHOD OF DETECTING IMPINGING POSITION OF PHOTONS ON A GEIGER-MODE AVALANCHE PHOTODIODE, RELATED GEIGER-MODE AVALANCHE PHOTODIODE AND FABRICATION PROCESS

Delfo Nunziato Sanfilippo; G. Condorelli


Archive | 2011

Geiger-mode avalanche photodiode with high signal-to-noise ratio, and corresponding manufacturing process

M. Mazzillo; Delfo Nunziato Sanfilippo


Archive | 2009

Geiger-mode photodiode with integrated and adjustable quenching resistor and surrounding biasing conductor

Delfo Nunziato Sanfilippo; Massimo Cataldo Mazillo

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E. Rimini

University of Catania

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