Denis Leclerc

Growth and characterization of Si, S and Zn-doped InP in selective area growth conditions

The incorporation and doping process of Si, S and Zn impurities in InP by metalorganic vapor phase epitaxy have been studied both in standard growth conditions (SGC) and in selective area growth (SAG) conditions using silane (SiH 4 ), hydrogen sulphide (H 2 S) and diethylzinc (DEZn). It was observed that in SGC, the dopant species behaviour, for two different growth rates, is in line with the expectations from the model and some previous reports made on doped GaAs and InP. On the other hand, in SAG conditions, the Si concentration was unexpectedly independent of the growth rate. Furthermore, the Zn and S codoping shows a Zn dopant concentration enhancement in SAG conditions, while it remains constant in SGC. These differences in behaviour are induced by the addition of dopant species transported by lateral vapour phase diffusion from the patterned region to the open region.

Transmission characteristics of 1.3 /spl mu/m Fabry-Perot laser diodes integrated with spot size converter for 2.5 Gbit/s applications

This article demonstrates the application of highly efficient Fabry-Perot lasers to intra-office STM-16 fiber communication systems at the wavelength of 1.3 /spl mu/m. Low power penalty of 0.05 dB through a 12 ps/nm fiber was measured at 25/spl deg/C and 85/spl deg/C. A low coupling loss of 1 dB of a laser to a cleaved SMF fiber is achieved. This device consists of an active stripe followed by a passive intracavity spot size converter. Subsequently, this paper demonstrates the feasibility of non-perturbing intracavity tapers through the application of selective area growth and their applicability to short haul optical systems.

Optimisation of butt coupling between deep-ridge and buried ridge waveguides for the realisation of monolithically integrated wavelength selectors

Butt coupling between deep ridge and buried ridge waveguides has been optimised in terms of morphology and transition tilt angles. Low reflectivities have been found for 15 to 30 degrees tilt angles, allowing the fabrication of a four channel wavelength selector. Loss-less operation has been demonstrated for each channel.