Devin R. Merrill

Misfit layer compounds and ferecrystals: Model systems for thermoelectric nanocomposites

A basic summary of thermoelectric principles is presented in a historical context, following the evolution of the field from initial discovery to modern day high-zT materials. A specific focus is placed on nanocomposite materials as a means to solve the challenges presented by the contradictory material requirements necessary for efficient thermal energy harvest. Misfit layer compounds are highlighted as an example of a highly ordered anisotropic nanocomposite system. Their layered structure provides the opportunity to use multiple constituents for improved thermoelectric performance, through both enhanced phonon scattering at interfaces and through electronic interactions between the constituents. Recently, a class of metastable, turbostratically-disordered misfit layer compounds has been synthesized using a kinetically controlled approach with low reaction temperatures. The kinetically stabilized structures can be prepared with a variety of constituent ratios and layering schemes, providing an avenue to systematically understand structure-function relationships not possible in the thermodynamic compounds. We summarize the work that has been done to date on these materials. The observed turbostratic disorder has been shown to result in extremely low cross plane thermal conductivity and in plane thermal conductivities that are also very small, suggesting the structural motif could be attractive as thermoelectric materials if the power factor could be improved. The first 10 compounds in the [(PbSe)1+δ]m(TiSe2)n family (m, n ≤ 3) are reported as a case study. As n increases, the magnitude of the Seebeck coefficient is significantly increased without a simultaneous decrease in the in-plane electrical conductivity, resulting in an improved thermoelectric power factor.

Synthesis and characterization of turbostratically disordered (BiSe)1.15TiSe2

The synthesis and characterization of turbostratically disordered (BiSe)1.15TiSe2 is reported. Specular and in-plane x-ray diffraction studies indicate an alternating structure containing two planes of a distorted rock salt structured BiSe and a Se–Ti–Se trilayer of TiSe2 with independent lattices. The title compound was found to be turbostratically (rotationally) disordered about the c-axis, and the BiSe layer displays an orthorhombic in-plane structure with a = 4.562(2) A and b = 4.242(1) A. Temperature dependent electrical resistivity reveals that the disordered compound is metallic, but with less temperature dependence than may be expected for a 3D crystal, which is attributed to the lack of coherent vibrations due to the turbostratic disorder. The room temperature resistivity was found to be ρ = 5.0 × 10−6 Ωm with a carrier concentration of n = 5 × 1021 cm−3. Comparing the carrier concentration to (PbSe)1.16TiSe2 suggests that the bismuth is trivalent and donates an electron to the conduction band of the TiSe2 constituent.

Carrier dilution in TiSe2 based intergrowth compounds for enhanced thermoelectric performance

Synthesis and electrical properties of kinetically stabilized (PbSe)1+δ(TiSe2)n thin-film intergrowths are reported for 1 ≤ n ≤ 18. A linear increase in the c-lattice parameter of the intergrowth is observed as n is increased and the slope is consistent with the inclusion of an additional TiSe2 structural unit as n is incremented by 1 and the observed intercept is consistent with the expected thickness of a PbSe bilayer. The charge donated to the TiSe2 constituent from the PbSe is diluted across more layers as n is increased, leading to a systematic increase in the Seebeck coefficient. The room temperature resistivity values of the reported compounds are all on the order of 10−5 Ω m and depend on defect densities that affect the mobility, making the magnitude of the resistivity less sensitive to n. The temperature dependence is metallic for large n, with a slight upturn at low temperatures due to localization of carriers for small n values. The power factor increases with n, including the highest reported for chalcogenide misfit layered and related compounds, showing that nanostructuring and modulation doping are an effective means of tuning the power factor of thermoelectric intergrowth materials. Since these compounds have very low thermal conductivity due to structural anisotropy and misregistration between intergrowth constituents, this suggests that varying their nanoarchitecture is a promising approach to obtain high values of zT.

Kinetically Controlled Formation and Decomposition of Metastable [(BiSe)1+δ]m[TiSe2]m Compounds

Preparing homologous series of compounds allows chemists to rapidly discover new compounds with predictable structure and properties. Synthesizing compounds within such a series involves navigating a free energy landscape defined by the interactions within and between constituent atoms. Historically, synthesis approaches are typically limited to forming only the most thermodynamically stable compound under the reaction conditions. Presented here is the synthesis, via self-assembly of designed precursors, of isocompositional incommensurate layered compounds [(BiSe)1+δ] m[TiSe2] m with m = 1, 2, and 3. The structure of the BiSe bilayer in the m = 1 compound is not that of the binary compound, and this is the first example of compounds where a BiSe layer thicker than a bilayer in heterostructures has been prepared. Specular and in-plane X-ray diffraction combined with high-resolution electron microscopy data was used to follow the formation of the compounds during low-temperature annealing and the subsequent decomposition of the m = 2 and 3 compounds into [(BiSe)1+δ]1[TiSe2]1 at elevated temperatures. These results show that the structure of the precursor can be used to control reaction kinetics, enabling the synthesis of kinetically stable compounds that are not accessible via traditional techniques. The data collected as a function of temperature and time enabled us to schematically construct the topology of the free energy landscape about the local free energy minima for each of the products.

Structural Changes as a Function of Thickness in [(SnSe)1+δ]mTiSe2 Heterostructures.

Single- and few-layer metal chalcogenide compounds are of significant interest due to structural changes and emergent electronic properties on reducing dimensionality from three to two dimensions. To explore dimensionality effects in SnSe, a series of [(SnSe)1+δ]mTiSe2 intergrowth structures with increasing SnSe layer thickness (m = 1-4) were prepared from designed thin-film precursors. In-plane diffraction patterns indicated that significant structural changes occurred in the basal plane of the SnSe constituent as m is increased. Scanning transmission electron microscopy cross-sectional images of the m = 1 compound indicate long-range coherence between layers, whereas the m ≥ 2 compounds show extensive rotational disorder between the constituent layers. For m ≥ 2, the images of the SnSe constituent contain a variety of stacking sequences of SnSe bilayers. Density functional theory calculations suggest that the formation energy is similar for several different SnSe stacking sequences. The compounds show unexpected transport properties as m is increased, including the first p-type behavior observed in (MSe)m(TiSe2)n compounds. The resistivity of the m ≥ 2 compounds is larger than for m = 1, with m = 2 being the largest. At room temperature, the Hall coefficient is positive for m = 1 and negative for m = 2-4. The Hall coefficient of the m = 2 compound changes sign as temperature is decreased. The room-temperature Seebeck coefficient, however, switches from negative to positive at m = 3. These properties are incompatible with single band transport indicating that the compounds are not simple composites.

Long-Range Order in [(SnSe)1.2]1[TiSe2]1 Prepared from Designed Precursors

Self-assembly of designed precursors has enabled the synthesis of novel heterostructures that exhibit extensive rotational disorder between constituents. In (SnSe)1.2TiSe2 nanoscale regions of long-range order were observed in scanning transmission electron microscopy (STEM) cross sectional images. Here a combination of techniques are used to determine the structure of this compound, and the information is used to infer the origin of the order. In-plane X-ray diffraction indicates that the SnSe basal plane distorts to match TiSe2. This results in a rectangular unit cell that deviates from both the bulk structure and the square in-plane unit cell previously observed in heterostructures containing SnSe bilayers separated by layers of dichalcogenides. The distortion results from lattice matching of the two constituents, which occurs along the <100> SnSe and the <110> TiSe2 directions as √3 × aTiSe2 equals aSnSe. Fast Fourier transform analysis of the STEM images exhibits sharp maxima in hkl families where h,k ≠ 0. The period is the same as that observed for 00l reflections, indicating regions of long-range superlattice order in all directions. X-ray reciprocal space maps contain broad maxima in hkl families of TiSe2 and SnSe based reflections consistent with the superlattice period, indicating that long-range order is present throughout a significant fraction of the film. The STEM images show that <110> planes of TiSe2 are adjacent to <100> planes of SnSe. Density functional theory suggests the preferred orientation is due to favored directions of nucleation with significant energy differences between islands of SnSe with different orientation relative to TiSe2. The calculations suggest that the long-range order in (SnSe)1.2TiSe2 results from an accidental coincidence in the lattice parameters of SnSe and TiSe2. These findings support a layer by layer nucleation process for the self-assembly of heterostructures from designed precursors, which rationalizes how designed precursors enable compounds with different constituents, defined thicknesses, and specific layer sequences to be prepared.

Interface-Driven Structural Distortions and Composition Segregation in Two-Dimensional Heterostructures

The discovery of emergent phenomena in 2D materials has sparked substantial research efforts in the materials community. A significant experimental challenge for this field is exerting atomistic control over the structure and composition of the constituent 2D layers and understanding how the interactions between layers drive both structure and properties. While no segregation for single bilayers was observed, segregation of Pb to the surface of three bilayer thick PbSe-SnSe alloy layers was discovered within [(Pbx Sn1-x Se)1+δ ]n (TiSe2 )1 heterostructures using electron microscopy. This segregation is thermodynamically favored to occur when Pbx Sn1-x Se layers are interdigitated with TiSe2 monolayers. DFT calculations indicate that the observed segregation depends on what is adjacent to the Pbx Sn1-x Se layers. The interplay between interface- and volume-free energies controls both the structure and composition of the constituent layers, which can be tuned using layer thickness.

Determining Interplanar Distances from STEM-EDX Hyperspectral Maps

Since the first demonstration of atomically resolved energy dispersive x-ray spectroscopy (EDX) using a scanning transmission electron microscope (STEM) in 2010 [1], theory based simulations established that EDS hyperspectral maps could be used to measure atomic distances. That is, EDX is an incoherent imaging mode and signal intensity corresponds directly to the structure of the sample [1]. It has also been demonstrated that fractional occupancies of chemical species can be quantified [2]. Here we present results exhibiting statistically significant atomic species-dependent differences in interplanar distances in addition to quantification of planar occupancies.

Quantitative High Resolution Chemical Analysis of the (Pb x Sn 1−x Se) 1+δ TiSe 2 Intergrowth System

Tuning the properties of materials is often achieved through chemical substitution. Chalcogenide based misfit layer compounds offer a promising class of tunable materials but have been limited by a lack of synthetic control of thermodynamic products. The modulated elemental reactant (MER) method provides a versatile diffusion limited synthesis approach for self-assembly of targeted kinetically stable products [1]. It has been shown that the nanostructure of the deposited precursor is preserved in the final products [2, 3, 4]. The added ability to form solid solutions within only the transition metal dichalcogenide constituent suggests promise for controlling the material properties on an even finer scale [5].