Diana Y. Qiu

Direct observation of the layer-dependent electronic structure in phosphorene

Phosphorene, a single atomic layer of black phosphorus, has recently emerged as a new two-dimensional (2D) material that holds promise for electronic and photonic technologies. Here we experimentally demonstrate that the electronic structure of few-layer phosphorene varies significantly with the number of layers, in good agreement with theoretical predictions. The interband optical transitions cover a wide, technologically important spectral range from the visible to the mid-infrared. In addition, we observe strong photoluminescence in few-layer phosphorene at energies that closely match the absorption edge, indicating that they are direct bandgap semiconductors. The strongly layer-dependent electronic structure of phosphorene, in combination with its high electrical mobility, gives it distinct advantages over other 2D materials in electronic and opto-electronic applications.

Probing the Role of Interlayer Coupling and Coulomb Interactions on Electronic Structure in Few-Layer MoSe2 Nanostructures

Despite the weak nature of interlayer forces in transition metal dichalcogenide (TMD) materials, their properties are highly dependent on the number of layers in the few-layer two-dimensional (2D) limit. Here, we present a combined scanning tunneling microscopy/spectroscopy and GW theoretical study of the electronic structure of high quality single- and few-layer MoSe2 grown on bilayer graphene. We find that the electronic (quasiparticle) bandgap, a fundamental parameter for transport and optical phenomena, decreases by nearly one electronvolt when going from one layer to three due to interlayer coupling and screening effects. Our results paint a clear picture of the evolution of the electronic wave function hybridization in the valleys of both the valence and conduction bands as the number of layers is changed. This demonstrates the importance of layer number and electron–electron interactions on van der Waals heterostructures and helps to clarify how their electronic properties might be tuned in future 2D nanodevices.

Nonanalyticity, Valley Quantum Phases, and Lightlike Exciton Dispersion in Monolayer Transition Metal Dichalcogenides: Theory and First-Principles Calculations.

Exciton dispersion as a function of center-of-mass momentum Q is essential to the understanding of exciton dynamics. We use the ab initio GW-Bethe-Salpeter equation method to calculate the dispersion of excitons in monolayer MoS(2) and find a nonanalytic lightlike dispersion. This behavior arises from an unusual |Q|-term in both the intra- and intervalley exchange of the electron-hole interaction, which concurrently gives rise to a valley quantum phase of winding number two. A simple effective Hamiltonian to Q(2) order with analytic solutions is derived to describe quantitatively these behaviors.

Screening and many-body effects in two-dimensional crystals: Monolayer MoS 2

We present a systematic study of the variables affecting the electronic and optical properties of two-dimensional(2D) crystals within \textit{ab initio} GW and GW plus Bethe Salpeter Equation (GW-BSE) calculations. As a prototypical 2D transition metal dichalcogenide material, we focus our study on monolayer MoS

High thermoelectric power factor in two-dimensional crystals of Mo S 2

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Environmental Screening Effects in 2D Materials: Renormalization of the Bandgap, Electronic Structure, and Optical Spectra of Few-Layer Black Phosphorus

. We find that the reported variations in GW-BSE results in the literature for monolayer MoS

Gate Switchable Transport and Optical Anisotropy in 90° Twisted Bilayer Black Phosphorus

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Erratum: Optical Spectrum of MoS 2 : Many-Body Effects and Diversity of Exciton States [Phys. Rev. Lett. 111 , 216805 (2013)]

and related systems arise from different treatments of the long-range Coulomb interaction in supercell calculations and convergence of k-grid sampling and cutoffs for various quantities such as the dielectric screening. In particular, the quasi-2D nature of the system gives rise to fast spatial variations in the screening environment, which are computationally challenging to resolve. We also show that common numerical treatments to remove the divergence in the Coulomb interaction can shift the exciton continuum leading to false convergence with respect to k-point sampling. Our findings apply to GW-BSE calculations on any low-dimensional semiconductors.

Electron dynamics in transition metal dichalcogenides utilizing attosecond transient absorption spectroscopy

The quest for high-efficiency heat-to-electricity conversion has been one of the major driving forces towards renewable energy production for the future. Efficient thermoelectric devices require careful material engineering such as high voltage generation from a temperature gradient, and high electrical conductivity while maintaining a low thermal conductivity. Significant progress in the thermoelectric performance of materials has been made by exploring the ultralow thermal conductivity at high temperature, reducing the thermal conductivity by nanostructuring, resonant doping and energy-dependent scattering. For a given thermal conductivity and temperature, thermoelectric powerfactor is determined by the electronic structure of the material. Low dimensionality (1D and 2D) opens new routes to high powerfactor due to their unique density of states of confined electrons and holes. Emerging 2D transition metal dichalcogenide (TMDC) semiconductors represent a new class of thermoelectric materials not only from their discretized density of states, but especially due to their large effective masses and high carrier mobilities, different from gapless semi-metallic graphene. Here we report a measured powerfactor of

Large spin-orbit splitting of deep in-gap defect states of engineered sulfur vacancies in monolayer WS2.

MoS_2