Diego Scarabelli

Nanoscale Engineering of Closely-Spaced Electronic Spins in Diamond

Numerous theoretical protocols have been developed for quantum information processing with dipole-coupled solid-state spins. Nitrogen vacancy (NV) centers in diamond have many of the desired properties, but a central challenge has been the positioning of NV centers at the nanometer scale that would allow for efficient and consistent dipolar couplings. Here we demonstrate a method for chip-scale fabrication of arrays of single NV centers with record spatial localization of about 10 nm in all three dimensions and controllable inter-NV spacing as small as 40 nm, which approaches the length scale of strong dipolar coupling. Our approach uses masked implantation of nitrogen through nanoapertures in a thin gold film, patterned via electron-beam lithography and dry etching. We verified the position and spin properties of the resulting NVs through wide-field super-resolution optically detected magnetic resonance imaging.

Fabrication of artificial graphene in a GaAs quantum heterostructure

The unusual electronic properties of graphene, which are a direct consequence of its two-dimensional honeycomb lattice, have attracted a great deal of attention in recent years. Creation of artificial lattices that re-create graphenes honeycomb topology, known as artificial graphene, can facilitate the investigation of graphenelike phenomena, such as the existence of massless Dirac fermions, in a tunable system. In this work, the authors present the fabrication of artificial graphene in an ultrahigh quality GaAs/AlGaAs quantum well, with lattice period as small as 50 nm, the smallest reported so far for this type of system. Electron-beam lithography is used to define an etch mask with honeycomb geometry on the surface of the sample, and different methodologies are compared and discussed. An optimized anisotropic reactive ion etching process is developed to transfer the pattern into the AlGaAs layer and create the artificial graphene. The achievement of such high-resolution artificial graphene should allo...

Observation of electron states of small period artificial graphene in nano-patterned GaAs quantum wells

Engineered honeycomb lattices, called artificial graphene (AG), are tunable platforms for the study of novel electronic states related to Dirac physics. In this work, we report the achievement of electronic bands of the honeycomb topology with the period as low as 40 nm on the nano-patterned modulation-doped AlGaAs/GaAs quantum wells. Resonant inelastic light scattering spectra reveal peaks which are interpreted as combined electronic transitions between subbands of the quantum well confinement with a change in the AG band index. Spectra lineshapes are explained by joint density of states obtained from the calculated AG electron band structures. These results provide a basis for further advancements in AG physics.