Shalom J. Wind

CMOS scaling into the nanometer regime

Starting with a brief review on 0.1-/spl mu/m (100 nm) CMOS status, this paper addresses the key challenges in further scaling of CMOS technology into the nanometer (sub-100 nm) regime in light of fundamental physical effects and practical considerations. Among the issues discussed are: lithography, power supply and threshold voltage, short-channel effect, gate oxide, high-field effects, dopant number fluctuations and interconnect delays. The last part of the paper discusses several alternative or unconventional device structures, including silicon-on-insulator (SOI), SiGe MOSFETs, low-temperature CMOS, and double-gate MOSFETs, which may lead to the outermost limits of silicon scaling.

Vertical scaling of carbon nanotube field-effect transistors using top gate electrodes

We have fabricated single-wall carbon nanotube field-effect transistors (CNFETs) in a conventional metal–oxide–semiconductor field-effect transistor (MOSFET) structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. These top gate devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V—a significant improvement relative to previously reported CNFETs which used the substrate as a gate and a thicker gate dielectric. Our measured device performance also compares very well to state-of-the-art silicon devices. These results are observed for both p- and n-type devices, and they suggest that CNFETs may be competitive with Si MOSFETs for future nanoelectronic applications.

Carbon nanotube electronics

We briefly review the electronic properties of carbon nanotubes (CNTs) and present results on the fabrication and characteristics of carbon nanotube field-effect transistors (CNTFETs) and simple integrated circuits. A novel approach allowing the catalyst-free synthesis of oriented CNTs is also presented.

Current-driven insulator–conductor transition and nonvolatile memory in chromium-doped SrTiO3 single crystals

Materials showing reversible resistive switching are attractive for today’s semiconductor technology with its wide interest in nonvolatile random-access memories. In doped SrTiO3 single crystals, we found a dc-current-induced reversible insulator–conductor transition with resistance changes of up to five orders of magnitude. This conducting state allows extremely reproducible switching between different impedance states by current pulses with a performance required for nonvolatile memories. The results indicate a type of charge-induced bulk electronic change as a prerequisite for the memory effect, scaling down to nanometer-range electrode sizes in thin films.

An Integrated Logic Circuit Assembled on a Single Carbon Nanotube

Single-walled carbon nanotubes (SWCNTs) have been shown to exhibit excellent electrical properties, such as ballistic transport over several hundred nanometers at room temperature. Field-effect transistors (FETs) made from individual tubes show dc performance specifications rivaling those of state-of-the-art silicon devices. An important next step is the fabrication of integrated circuits on SWCNTs to study the high-frequency ac capabilities of SWCNTs. We built a five-stage ring oscillator that comprises, in total, 12 FETs side by side along the length of an individual carbon nanotube. A complementary metal-oxide semiconductor‐type architecture was achieved by adjusting the gate work functions of the individual p-type and n-type FETs used.

High‐resolution scanning SQUID microscope

We have combined a novel low temperature positioning mechanism with a single‐chip miniature superconducting quantum interference device (SQUID) magnetometer to form an extremely sensitive new magnetic microscope, with a demonstrated spatial resolution of ∼10 μm. The design and operation of this scanning SQUID microscope will be described. The absolute calibration of this instrument with an ideal point source, a single vortex trapped in a superconducting film, will be presented, and a representative application will be discussed.

Nanolithographic control of the spatial organization of cellular adhesion receptors at the single-molecule level

The ability to control the placement of individual molecules promises to enable a wide range of applications and is a key challenge in nanoscience and nanotechnology. Many biological interactions, in particular, are sensitive to the precise geometric arrangement of proteins. We have developed a technique which combines molecular-scale nanolithography with site-selective biochemistry to create biomimetic arrays of individual protein binding sites. The binding sites can be arranged in heterogeneous patterns of virtually any possible geometry with a nearly unlimited number of degrees of freedom. We have used these arrays to explore how the geometric organization of the extracellular matrix (ECM) binding ligand RGD (Arg-Gly-Asp) affects cell adhesion and spreading. Systematic variation of spacing, density, and cluster size of individual integrin binding sites was used to elicit different cell behavior. Cell spreading assays on arrays of different geometric arrangements revealed a dramatic increase in spreading efficiency when at least four liganded sites were spaced within 60 nm or less, with no dependence on global density. This points to the existence of a minimal matrix adhesion unit for fibronectin defined in space and stoichiometry. Developing an understanding of the ECM geometries that activate specific cellular functional complexes is a critical step toward controlling cell behavior. Potential practical applications range from new therapeutic treatments to the rational design of tissue scaffolds that can optimize healing without scarring. More broadly, spatial control at the single-molecule level can elucidate factors controlling individual molecular interactions and can enable synthesis of new systems based on molecular-scale architectures.

High performance 0.1 /spl mu/m CMOS devices with 1.5 V power supply

This paper presents the design, fabrication, and characterization of high-performance 0.1 /spl mu/m-channel CMOS devices with dual n/sup +p/sup +/ polysilicon gates on 35 /spl Aring/-thick gate oxide. A 22 ps/stage CMOS-inverter delay is obtained at a power supply voltage of 1.5 V. The highest unity-current-gain frequencies (f/sub T/) measured are 118 GHz for nMOSFET, and 67 GHz for pMOSFET.<<ETX>>

Long-range charge transport in single G-quadruplex DNA molecules

DNA and DNA-based polymers are of interest in molecular electronics because of their versatile and programmable structures. However, transport measurements have produced a range of seemingly contradictory results due to differences in the measured molecules and experimental set-ups, and transporting significant current through individual DNA-based molecules remains a considerable challenge. Here, we report reproducible charge transport in guanine-quadruplex (G4) DNA molecules adsorbed on a mica substrate. Currents ranging from tens of picoamperes to more than 100 pA were measured in the G4-DNA over distances ranging from tens of nanometres to more than 100 nm. Our experimental results, combined with theoretical modelling, suggest that transport occurs via a thermally activated long-range hopping between multi-tetrad segments of DNA. These results could re-ignite interest in DNA-based wires and devices, and in the use of such systems in the development of programmable circuits.

Fabrication and electrical characterization of top gate single-wall carbon nanotube field-effect transistors

We describe the fabrication of single-wall carbon nanotube field-effect transistors in a conventional metal–oxide–semiconductor field-effect transistor structure, with gate electrodes above the conduction channel separated from the channel by a thin dielectric. We use these devices to study the performance improvements achieved by reducing the gate-to-channel separation. The top gate structure offers certain structural advantages over earlier, back gated carbon nanotube devices. In addition, these devices exhibit excellent electrical characteristics, including steep subthreshold slope and high transconductance, at gate voltages close to 1 V. The measured device characteristics are significantly better than previously reported carbon nanotube devices, providing further motivation to explore the use of carbon nanotubes for future nanoelectronic applications.