Dieter Silber

Dielectric charge traps. A new structure element for power devices

The progress in SOI technologies, especially SIMOX and Silicon Direct Bonding, suggests a new type of structural element which could improve device blocking behavior in various aspects. A novel structure element for realizing high breakdown voltages in power devices is analyzed using numerical simulations. We propose dielectric structures which in strong vertical fields collect majority or minority carriers. These structures enable surprising new solutions for various problems. Improved high voltage field plates, surface field reduced Schottky rectifiers, dynamic buffers and Ron improved unipolar devices can be achieved.

Buried recombination layers with enhanced n-type conductivity for silicon power devices

Abstract The concentration profile of defect centres induced by proton irradiation, which had been proposed as a technique for production of recombination layers in silicon, is investigated using DLTS and spreading resistance. After irradiation and annealing additionally a buried shallow donor doped layer is observed. Comparison with α-irradiated samples suggests the interpretation as proton-containing centres. The buried n-layer may vary the breakdown voltage of power devices. It could be regarded as being favourable for GTO thyristors.