Don-Ha Hwang

Anomalous oxygen precipitation near the vacancy and interstitial boundary in CZ-Si wafers

The behavior of oxygen precipitation was investigated in radial direction using Si wafers with different generation area of vacancy-related defects. Oxygen precipitation is more enhanced in vacancy-rich region than in interstitial-rich region. The behavior of oxygen precipitation in the radial direction is strongly dependent on the size of vacancy-rich region which is related to crystal growth condition. Anomalous oxygen precipitation occurred in the marginal vacancy-rich region and the inner edge of interstitial rich region. In the marginal interstitial-rich region, however, oxygen precipitation is suppressed to nearly zero.

Incomplete discoid glenoid labrum combined with a ganglion cyst of the spinoglenoid notch

In a 41-year-old man, right-sided infraspinatus muscle weakness was associated with compression of the suprascapular nerve caused by a spinoglenoid ganglion cyst. The lesion was confirmed using electromyography and MRI. In addition, arthroscopy showed an incomplete discoid labrum. The free inner edge of the labrum was removed as in a meniscectomy of a discoid meniscus in the knee joint. Arthroscopic decompression of the cyst was performed through a juxtaglenoid capsulotomy which was left open. Neurological function recovered completely.

The influence of point defect on the behavior of oxygen precipitation in CZ-Si wafers

Abstract The effect of heat treatment conditions and point defects on oxygen precipitation was investigated with various grown-in defect region wafers. The behavior of oxygen precipitation depends on the nucleation temperature and the type and the concentration of point defects. The peak temperature of nucleation for oxygen precipitation is 687–734°C in vacancy-rich, oxidation-induced stacking fault ring, interstitial Si-rich and interstitial pure regions. In vacancy-pure region, the peak temperature of nucleation is about 870°C. The vacancy plays an important role in increasing the peak temperature of nucleation for oxygen precipitation.

The study on the radial distribution of delta [Oi] in heavily doped Si wafer using X-ray diffraction

Abstract The radial distribution of the delta [Oi] for the heavily doped silicon wafers was investigated using X-ray diffraction technique. In order to obtain the correlation between delta [Oi] and X-ray intensity ratio for the lightly doped wafers with different initial [Oi] concentrations, the oxygen concentration using FTIR and X-ray intensity were measured before and after two-step annealing. The relation between delta [Oi] and X-ray intensity ratio showed that it was close to the parabolic correlation rather than the linear correlation. The deviation of this measurement was about ±0.4xa0ppma. This correlation equation could be applied to the heavily doped wafers. It is shown that the radial distribution of the delta [Oi] is not uniform in the radial direction but has the symmetric relation at the wafer center. The bulk micro defect (BMD) density using etching method was measured to confirm these results.