Dong Churl Kim

Loss-coupled distributed-feedback lasers with amplified optical feedback for optical microwave generation

Multisection semiconductor lasers for optical microwave generation have been fabricated that consist of a loss-coupled distributed feedback (LC-DFB), a phase control, and an amplifier section. High-frequency self-pulsations are generated according to the concept of a single-mode laser with short optical feedback. The effect of the optical feedback via the phase control and the amplifier section on the self-pulsation is apparently shown as a result of the superior single-mode characteristic of the LC-DFB section. Continuous frequency tuning is achieved in the range of 17-35 GHz.

Widely frequency-tunable amplified feedback lasers for 10-GHz optical pulsation

Monolithic amplified feedback semiconductor lasers are demonstrated as a new solution to 10-GHz optical pulsation, where self-pulsations are generated according to the concept of a single-mode laser with shortly delayed optical feedback. They consist of a loss-coupled distributed feedback section operating as a single-mode laser and an integrated feedback cavity including a phase control, an amplifier, and a transparency section. The pulsation frequency is continuously tunable in the range of 7-11.5 GHz with an extinction ratio above 6.5 dB, which indicates that precise control of a cavity length is not needed.

10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier for colorless WDM-PON

We demonstrated 10.7 Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA) using simplified fabrication process. Good performance at 10.7 Gb/s was obtained with an extinction ratio of > 10 dB and a power penalty of < 1 dB at a 10(-9) bit error rate (BER) up to 20 km transmission. The device operated over a 50 nm spectral range within 1 dB received power variation at a 10(-9) BER.

Improvement of modulation bandwidth in multisection RSOA for colorless WDM-PON

We demonstrated two-section reflective semiconductor optical amplifier (RSOA) with dramatic improvement of small-signal modulation bandwidth above 10 GHz as colorless source for wavelength division multiplexed-passive optical network (WDM-PON). The device provides the fiber-to-fiber gain of 22.8 dB, 3-dB amplified spontaneous emission (ASE) bandwidth of 30 nm, and ripple of 1.5 dB. Good performance at 2.5 Gbps was obtained with an extinction ratio of 8 dB and a power penalty of 2 dB at a 10(-9) bit error rate (BER) up to 20 km transmission.

Monolithically Integrated Tunable Laser Using Double-Ring Resonators With a Tilted Multimode Interference Coupler

A monolithically integrated tunable semiconductor ring laser consisting of a semiconductor optical amplifier and two ring resonators with tilted multimode interference (MMI) couplers is presented. The characteristic response of the ring resonators is discussed for various cross coupling strengths by adjusting the angle of the tilted MMI couplers. The ring laser has a wavelength tuning range of 11 nm and a sidemode suppression ratio larger than 40 dB for a cross coupling strength of 0.09. The peak power of the laser is larger than -3 dBm for chip-to-fiber coupling.

Self-pulsation in multisection laser diodes with a DFB reflector

A novel self-pulsation regime is observed in multisection laser diodes which consist of a loss-coupled distributed-feedback (DFB) section, a phase control section, and gain sections, where 10-GHz self-pulsation due to compound cavity mode beating has been reported with the DFB section operated as a single-mode laser. When the DFB section is below threshold current, the devices give the self-pulsation in a very wide operating range. We attribute the pulsation to passive mode-locking and also confirm that this structure is applicable to 40-GHz operation

2.5 Gbps Direct Modulation of Reflective Semiconductor Optical Amplifier for Wavelength Division Multiplexing Passive Optical Network Colourless Sources

We present fabrication results of a planar-buried-heterostructure (PBH)-type reflective semiconductor optical amplifier (R-SOA). Active and passive waveguides forming R-SOA were integrated by butt-coupling. The optical gain and 3 dB amplified spontaneous emission (ASE) bandwidth were about 25 dB and 35 nm, respectively. The polarization-dependent gain (PDG) was about 0.8 dB. We could obtain a clearly opened eye diagram under 2.5 Gbps direct modulation. In a bit-error-rate (BER) test, the receiver sensitivity and power penalty after 20 km transmission were about -27 dBm and 2 dB, respectively.

The characterization of all-optical 3R regeneration based on InP-related semiconductor optical devices

We report characterization and experimental realization of recent InP-related semiconductor optical devices for all-optical 3R regeneration. A Mach-Zehnder interferometric wavelength converter (MZ IWC) with preamplifiers gives an extinction ratio (ER) improvement and a negative power penalty for all-optical reamplification and reshaping (2R) of pseudorandom bit sequence (PRBS) nonreturn-to-zero (NRZ) data at 10 Gb/s. In addition, we briefly describe the mechanism for injection locking of the multisection laser diode with a distributed feedback (DFB) reflector. Using this device, we demonstrate clock recovery from PRBS return-to-zero (RZ) and NRZ data. The achieved rms timing jitter is less than 1 ps for the input of 11.727 Gb/s PRBS RZ and NRZ. All-optical 3R regeneration leads to a good performance using the MZ IWC and multisection DFB LD. The combination of these functions provides all-optical 3R regeneration with NRZ to RZ conversion. For the realization of a small and compact 3R regeneration module, we propose the hybrid module packaging process, which is composed of 2R and 1R semiconductor chip in single butterfly-type module

Mitigation of Rayleigh crosstalk using noise suppression technique in 10-Gb/s REAM-SOA.

We demonstrate a mitigation of Rayleigh back-scattering (RBS) impact in 10-Gb/s reflective electroabsorption modulator monolithically integrated with semiconductor optical amplifier (REAM-SOA). The technique is based on the intensity-noise suppression of the centralized incoherent seed-light, which enables smooth evolution of deployed DWDM applications. We exhibit the power penalty of less than 1 dB at the large RBS crosstalk value of about 8 dB when the optical power of seed-light is lowered about -10 dBm.

A novel self-pulsation in laser diodes with a DFB reflector

This paper presents a novel self-pulsation in the laser diode with a DFB reflector in a compound cavity mode beating structure. This study also shows that dispersive Q-switching is a most probable origin of self-pulsation