Dong-Hai Huang

Characteristics of In/sub 0.425/Al/sub 0.575/As-InxGa/sub 1-x/As metamorphic HEMTs with pseudomorphic and symmetrically graded channels

In/sub 0.425/Al/sub 0.575/As-In/sub x/Ga/sub 1-x/As metamorphic high electron mobility transistors (MHEMTs) with two different channel designs, grown by molecular beam epitaxy (MBE) system, have been successfully investigated. Comprehensive dc and high-frequency characteristics, including the extrinsic transconductance, current driving capability, device linearity, pinch-off property, gate-voltage swing, breakdown performance, unity-gain cutoff frequency, max. oscillation frequency, output power, and power gain, etc., have been characterized and compared. In addition, complete parametric information of the small-signal device model has also been extracted and discussed for the pseudomorphic channel MHEMT (PC-MHEMT) and the V-shaped symmetrically graded channel MHEMT (SGC-MHEMT), respectively.

Performance Improvement in Tensile-Strained

This paper proposes a

hbox In_0.5hbox Al_0.5hbox As/hbox In_xhbox Ga_1-xhbox As/hbox In_0.5hbox Al_0.5hbox As

hbox In_0.5hbox Al_0.5

Metamorphic HEMT

As/

High-temperature threshold characteristics of a symmetrically graded InAlAs∕InxGa1−xAs∕GaAs metamorphic high electron mobility transistor

hbox In_xhbox Ga_1-xhbox As

Enhancing the current gain in InP/InGaAs double heterojunction bipolar transistors using emitter edge thinning

break/

Gate-alloy-related kink effect for metamorphic high-electron-mobility transistors

hbox In_0.5hbox Al_0.5hbox As

Improved InAlGaP-based heterostructure field-effect transistors

(x=0.3-0.5-0.3)

Comparative study of In0.52Al0.48As/InxGa1−xAs/InP high-electron-mobility transistors with a symmetrically graded and an inversely graded channel

metamorphic high-electron mobility transistor with tensile-strained channel. The tensile-strained channel structure exhibits significant improvements in dc and RF characteristics, including extrinsic transconductance, current driving capability, thermal stability, unity-gain cutoff frequency, maximum oscillation frequency, output power, power gain, and power added efficiency.