J. C. A. Huang

Tailoring low-dimensional structures of bismuth on monolayer epitaxial graphene

To improve graphene-based multifunctional devices at nanoscale, a stepwise and controllable fabrication procedure must be elucidated. Here, a series of structural transition of bismuth (Bi) adatoms, adsorbed on monolayer epitaxial graphene (MEG), is explored at room temperature. Bi adatoms undergo a structural transition from one-dimensional (1D) linear structures to two-dimensional (2D) triangular islands and such 2D growth mode is affected by the corrugated substrate. Upon Bi deposition, a little charge transfer occurs and a characteristic peak can be observed in the tunneling spectrum, reflecting the distinctive electronic structure of the Bi adatoms. When annealed to ~500u2009K, 2D triangular Bi islands aggregate into Bi nanoclusters (NCs) of uniform size. A well-controlled fabrication method is thus demonstrated. The approaches adopted herein provide perspectives for fabricating and characterizing periodic networks on MEG and related systems, which are useful in realizing graphene-based electronic, energy, sensor and spintronic devices.

Inverse spin Hall effect induced by spin pumping into semiconducting ZnO

The inverse spin Hall effect (ISHE) of n-type semiconductor ZnO thin films with weak spin-orbit coupling has been observed by utilizing the spin pumping method. In the ferromagnetic resonance condition, the spin pumping driven by the dynamical exchange interaction of a permalloy film injects a pure spin current into the adjacent ZnO layer. This spin current gives rise to a DC voltage through the ISHE in the ZnO layer, and the DC voltage is proportional to the microwave excitation power. The effect is sizeable even when the spin backflow is considered.

Origin of p-type conductivity of Sb-doped ZnO nanorods and the local structure around Sb ions

To probe the origin of p-type conductivity in Sb-doped ZnO, a careful and detailed synchrotron radiation study was performed. The extended X-ray absorption fine structure and X-ray photoelectron spectroscopy investigations provided the evidence for the formation of the complex defects comprising substitution Sb ions at Zn sites (SbZn) and Zn vacancies within the Sb-doped ZnO lattice. Such complex defects result in the increases of Sb-O coordination number and the Sb valence and thereby lead to the p-type conductivity of Sb-doped ZnO. The back-gate field-effect-transistors based on single nanorod of Sb-doped ZnO were constructed, and the stable p-type conduction behavior was confirmed.

Proximity Effect induced transport Properties between MBE grown (Bi1-xSbx)2Se3 Topological Insulators and Magnetic Insulator CoFe2O4

In this study, we investigate the proximity effect in topological insulator (TI) and magnetic insulator bilayer system. (Bi1−xSbx)2Se3/CoFe2O4 (CFO) heterostructure was fabricated using molecular beam epitaxy and pulsed laser deposition system respectively. As revealed from the magnetoresistance measurement, the weak anti-localization (WAL) is strongly suppressed by proximity effect in (Bi1−xSbx)2Se3/CFO interface. Modified Hikama-Larkin-Nagaoka equation was used to fit the WAL results so that the size of surface state gap can be extracted successfully. The temperature-dependent resistance of the heterostructures at small and large perpendicular magnetic fields were also measured and analyzed. The results indicate that the surface band gap can be induced in TI and continuously enlarged up to 9u2009T, indicating the gradual alignment of the magnetic moment in CFO under perpendicular magnetic field. The approaches and results accommodated in this work show that CFO can effectively magnetize (Bi1−xSbx)2Se3 and the heterostructures are promising for TI-based spintronic device applications.

Photoluminescence and electrical properties of bidirectional ZnO nanowires on Zn foils via a thermal oxidation method

ZnO nanowires (NWs) were directly grown on ductile zinc foils through a two-step process: (a) large, thin, and ductile Zn foils were fabricated from a mixture of Zn and ZnO powders; and (b) ZnO NWs were produced by thermal oxidation at temperatures of 300–600 °C. The ZnO NWs presented preferential growth in the [101] orientation. The highly crystalline NWs synthesized at 500 °C exhibited a bidirectional mode with an angle of approximately 60° between their longitudinal axes. On foils oxidized at 600 °C, the NWs evolved into nanotowers. The photoluminescence (PL) spectra showed strong peaks at approximately 368 nm and weaker peaks at approximately 374 nm in the UV region; moreover, a broad deep-level-related green emission peak was recorded at approximately 520 nm in the visible region. The PL green emission line was strongly suppressed for the samples produced at higher oxidation temperatures, which indicated good optical qualities. These good optical qualities, combined with the bidirectional mode and the ductility of the foil, are expected to be useful for flexible planar device applications. The electrical properties of a single ZnO NW were investigated. I–V measurements revealed the Schottky characteristics of the NWs and the resistivity of the ZnO NWs was measured to be ∼93 Ω cm.

Ultrathin (Bi1–xSbx)2Se3 Field Effect Transistor with Large ON/OFF Ratio

Ultrathin three-dimensional topological insulator films are promising for use in field effect devices. (Bi1-xSbx)2Se3 ultrathin films were fabricated on SrTiO3 substrate, where large resistance changes of ∼25u202f000% could be achieved using the back gate voltage. We suggest that the large ON/OFF ratio was caused by the combined effect of Sb-doping and the reduction of film thickness down to the ultrathin regime. The crossover of different quantum transport under an electric field may form the basis for topological insulators (TI)-based spin transistors with large ON/OFF ratios in the future.

Growth and characterization of MBE-grown (Bi1-xSbx)2Se3 topological insulator

(Bi1− x Sb x )2Se3 thin films were prepared by molecular beam epitaxy (MBE). The existence of strong and robust topological surface states was demonstrated in the (Bi1− x Sb x )2Se3 ternary system by angle-resolved photoemission spectroscopy (ARPES). The sheet carrier density n 2D was found to be decreased by 75% by doping Sb into Bi2Se3, compared with that in the case of undoped Bi2Se3. The enhancement of the surface state transport due to Sb doping was also revealed via the high-field Hall effect and weak antilocalization measurement. Our results reveal the potential of this system for the study of tunable topological-insulator based device physics.

Effect of Ge and Al substitutions on exchange bias in Ni-Mn-Sb alloy

Magnetic properties, martensitic transition, and exchange bias in Ni50Mn36Sb14, Ni50Mn36Sb12Ge2, and Ni50Mn36Sb12Al2 alloys have been investigated. The results reveal that the martensitic transition temperatures and blocking temperature shift to low temperature for Ge substitution and shift to high temperature for Al substitution. The exchange bias field decreases/increases in case of Ge/Al substitution below blocking temperature. All the results can be ascribed to the increase/decrease of ferromagnetic interaction.

X-Ray Investigation on the Change of Crystallographic Orientation in Epitaxial Permalloy Induced by Mo Island Edges

Epitaxial permalloy thin films were prepared on the sapphire substrates via Mo buffer layer. The structure of epitaxial permalloy film is strongly related to the thickness of the buffer layer. Different preferred orientations has been observed as the thickness of the Mo buffer layer increased from 0 to 20 nm. With the in-plane permalloy[0-11] azimuth always locked on the Al2O3 [0001] direction, the permalloy(111) is the preferred orientation in plane normal direction deposition without Mo layer. The preferred orientation changes to (220) when the Mo layer thickness increases to more than 0.4 nm, and shifts to (211) when the Mo thickness is larger 1 nm. The variation of epitaxial orientation is attributed to the stabilization of permalloy on Mo island edges. As the Mo buffer thickness larger than 10 nm, the permalloy film is developed into a fee twin structure with ID disordered stacking parallel to the underlying Al2O3 [11-20] direction.

Cu/Cu2O nanocomposite films as a p-type modified layer for efficient perovskite solar cells

Cu/Cu2O films grown by ion beam sputtering were used as p-type modified layers to improve the efficiency and stability of perovskite solar cells (PSCs) with an n-i-p heterojunction structure. The ratio of Cu to Cu2O in the films can be tuned by the oxygen flow ratio (O2/(O2u2009+u2009Ar)) during the sputtering of copper. Auger electron spectroscopy was performed to determine the elemental composition and chemical state of Cu in the films. Ultraviolet photoelectron spectroscopy and photoluminescence spectroscopy revealed that the valence band maximum of the p-type Cu/Cu2O matches well with the perovskite. The Cu/Cu2O film not only acts as a p-type modified layer but also plays the role of an electron blocking buffer layer. By introducing the p-type Cu/Cu2O films between the low-mobility hole transport material, spiro-OMeTAD, and the Ag electrode in the PSCs, the device durability and power conversion efficiency (PCE) were effectively improved as compared to the reference devices without the Cu/Cu2O interlayer. The enhanced PCE is mainly attributed to the high hole mobility of the p-type Cu/Cu2O film. Additionally, the Cu/Cu2O film serves as a protective layer against the penetration of humidity and Ag into the perovskite active layer.