Dong Hyuk Chae
Samsung
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Publication
Featured researches published by Dong Hyuk Chae.
IEEE Electron Device Letters | 2012
Myounggon Kang; Kyunghwan Lee; Dong Hyuk Chae; Byung-Gook Park; Hyungcheol Shin
This letter presents a compact model of nand Flash strings in which complex characteristics of scaled-down Flash cells can be captured very accurately through simple circuit simulation. Different from previous modeling studies, the proposed model has detailed physical descriptions for channel potential of Flash cell so that various program disturbances due to leakages in nand string can be easily analyzed. The compact model of channel potential is fully compatible with BSIM4 SPICE model. By applying compact model to the 30-nm nand product, many phenomena in the device were realized with more than 95% accuracy at the expense of only a few minutes.
Japanese Journal of Applied Physics | 2011
Myounggon Kang; Wook-ghee Hahn; Il Han Park; Youngsun Song; Ho-Cheol Lee; Kihwan Choi; Young-Ho Lim; Sung-Min Joe; Dong Hyuk Chae; Hyungcheol Shin
This paper presents an analytic model for NAND flash array where channel coupling embodies. Channel coupling effect which is becoming a more serious issue in developing high-density flash memory devices should be effectively suppressed. By applying the coupling model to a 30-nm NAND flash product, the simulation showed a good agreement with the measurement results. Also, complex problems in scaled NAND flash memories could be accurately explained by circuit simulations. This evaluation will be useful in developing high-density multi-level cell (MLC) NAND flash technologies.
european solid state device research conference | 2008
Tae-Kyung Kim; Sung-nam Chang; Seung-Wan Hong; Dong Hyuk Chae; Keonho Lee; Jeong-Hyuk Choi
Eight-level NAND flash memories with 51 nm design rule and 44-cell string floating gate technology have been successfully developed for the first time. 44-cell string with floating poly silicon and tungsten silicide (WSi) gate structure reduced the cell area per bit and improved chip cost efficiency. 44-cell string structure shows acceptable cell current and the results of endurance and interference are quite comparable to the conventional 32-cell string structure.
Archive | 2009
Jae Hong Kim; Kyoung Lae Cho; Yong June Kim; Dong Hyuk Chae
Archive | 2008
Jun Jin Kong; Sung Chung Park; Dongku Kang; Dong Hyuk Chae; Seung-Jae Lee; Nam Phil Jo; Seung-Hwan Song
Archive | 2007
Dong Hyuk Chae; Dae-Seok Byeon
Archive | 2008
Sung Chung Park; Heeseok Eun; Seung-Hwan Song; Jun Jin Kong; Dong Hyuk Chae
Archive | 2004
Dong Hyuk Chae; Dae Seok Byeon
Archive | 2008
Sung Soo Lee; Young Ho Lim; Hyun Chul Cho; Dong Hyuk Chae
Archive | 2008
Donghun Yu; Kyoung Lae Cho; Dongku Kang; Dong Hyuk Chae; Jun Jin Kong