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Dive into the research topics where Hyun Chul Cho is active.

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Featured researches published by Hyun Chul Cho.


international solid-state circuits conference | 2004

A 3.3 V 4 Gb four-level NAND flash memory with 90 nm CMOS technology

Seung-Jae Lee; Young-Taek Lee; Wook-Kee Han; Dong-Hwan Kim; Moosung Kim; Seung-Hyun Moon; Hyun Chul Cho; Jung-Woo Lee; Dae-Seok Byeon; Young-Ho Lim; Hyung Suk Kim; Sung-Hoi Hur; Kang-Deog Suh

A 4 Gb NAND flash memory with 2 b/cell uses 90 nm CMOS to achieve simultaneous data load during program operation with 1.6 MB/s program throughput. Fuse or pad-bonding switches it to a 2 Gb 1 b/cell NAND flash memory. The row decoder located in the middle of the cell array reduces W/L rise time and coupling noise. A program-after-erase technique and lowered floating poly thickness minimize cell Vth distribution.


Archive | 2008

Page buffer and multi-state nonvolatile memory device including the same

Sung Soo Lee; Young Ho Lim; Hyun Chul Cho; Dong Hyuk Chae


Archive | 2014

OUTDOOR HEAT EXCHANGER AND AIR CONDITIONER

Jin Woo Hong; Dong Suk Kim; Jungho Kim; Ha Na Kim; Jong Yeop Baek; Byung Han Lim; Hong Gi Cho; Dong Hyun Kim; Jun Woo Suh; Hyun Chul Cho; Yong Hwa Choi


Archive | 2005

PAGE BUFFER AND MULTIBIT NONVOLATILE MEMORY DEVICE INCLUDING THE SAME

Dong-Hyuk Chae; Hyun Chul Cho; Lee Sung-Soo; Lim Young-Ho


The Korean journal of internal medicine | 2009

A case of insulin autoimmune syndrome

Hyun Chul Cho; Ssang-Yong Oh; You-Jung Kim; Chan-Sung Bak; Eun-Sook Kim; Young-Il Kim; Il-Seong Nam-Goong


Kidney research and clinical practice | 2008

A Case of Membranoproliferative Glomerulonephritis Associated with Sjogren's Syndrome

Ssang-Yong Oh; Hee-Jeong Cha; Min-Su Kim; Hyun Chul Cho; Hyun-Chul Chung; Jong-Soo Lee; Jongha Park


Archive | 2005

Mehrbit nichtflüchtiges Halbleiterspeicherbauelement und Betriebsverfahren

Dong Hyuk Chae; Hyun Chul Cho; Sung Soo Sungnam Lee; Young Ho Lim


Archive | 2005

Nichtflüchtiges Speicherbauelement Non-volatile memory device

Sung Soo Lee; Young Ho Lim; Hyun Chul Cho; Dong Hyuk Chae


Archive | 2005

Multi-bit non-volatile semiconductor memory e.g. NAND type flash memory, has page buffer circuit which selectively flips logic value of main latch data responsive to sub-latch data in programming mode

Dong Hyuk Chae; Hyun Chul Cho; Sung Soo Sungnam Lee; Young Ho Lim


Archive | 2005

Non-volatile memory component, e.g. for portable device such as digital camera. mobile- (cell-) phone etc, has page buffer provided with scanning node selectively joined to bit line

Dong Hyuk Chae; Hyun Chul Cho; Sung Soo Sungnam Lee; Young Ho Lim

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