Dong-Hyuk Ju

FIELD EFFECT TRANSISTOR WITH NON-FLOATING BODY AND METHOD FOR FORMING SAME ON A BULK SILICON WAFER

CMOS processing employing removable sidewall spacers for independently optimized N- and P-channel transistor performance

SOI device with structure for enhancing carrier recombination and method of fabricating same

SOI MOSFET and method of fabrication

Process for fabricating a semiconductor device having assymetric source-drain extension regions

Silicon wafer including both bulk and SOI regions and method for forming same on a bulk silicon wafer

Fabrication of raised source-drain transistor devices

Heat treating nitrogen implanted gate electrode layer for improved gate electrode etch profile

Fabrication process employing a single dopant implant for formation of a drain extension region and a drain region of an LDD MOSFET using enhanced lateral diffusion

Silicidation and deep source-drain formation prior to source-drain extension formation