Dong-Sik Eom

Multilayer Substrate Integrated Waveguide Four-Way Out-of-Phase Power Divider

In this paper, a multilayer substrate integrated waveguide (SIW) four-way out-of-phase power divider is investigated. In a previous research (Eom , 2009), the four-way power division was studied by a 3-D mode coupling method, which was achieved by a vertical Y-junction as well as a lateral Y-junction of half mode substrate integrated waveguides (HMSIW) using a multilayer substrate. In this research, resistive coupling slots, for obtaining good isolation between four output ports and impedance matching at all the ports, are realized on the lateral HMSIW Y-junctions and the vertical HMSIW Y-junctions using isolation resistors. From the measurement results, excellent performances of insertion loss, isolation, impedance matching, and amplitude balancing were simultaneously achieved for the X-band range. It is expected that the proposed design of a multilayer substrate integrated waveguide (ML-SIW) power divider will play an important role in the future integration of compact multiway SIW circuits and systems.

Multi-layer four-way out-of-phase power divider for substrate integrated waveguide applications

In this paper, a novel multi-layer four-way out-of-phase power divider based on substrate integrated waveguide (SIW) is proposed. The four-way power division is realized by 3-D mode coupling; vertical partitioning of a SIW followed by lateral coupling to two half-mode SIW. The measurement results show the excellent insertion loss (S<inf>21</inf>, S<inf>31</inf>, S<inf>41</inf>, S<inf>51</inf>: −7.0 ± 0.5 dB) and input return loss (S<inf>11</inf>: −10 dB) in X-band (7.63 GHz ∼ 11.12 GHz). We expect that the proposed power divider play an important role for the integration of compact multi-way SIW circuits.

A Broadband Half-Mode Substrate Integrated Waveguide Quadrature Wilkinson Power Divider Using Composite Right/Left-Handed Transmission Line

In this work, a broadband composite right/left-handed (CRLH) half-mode substrate integrated waveguide (HMSIW) quadrature Wilkinson power divider is proposed. The proposed CRLH-HMSIW quadrature power divider includes a microstrip Wilkinson power divider on the transition structure between the microstrip and HMSIW, and two thru transmission lines for the HMSIW and the CRLHHMSIW. The measured amplitude, phase difference and isolation between the two output ports of the proposed structure have 1 dB, ±5° and less than -15 dB in a wide frequency range of 4.1–6.68 GHz with 47.9% bandwidth, respectively.

Broadband Half Mode Substrate Integrated Waveguide Attenuator in 7.29–14.90 GHz

This letter presents a broadband half mode substrate integrated waveguide (HMSIW) attenuator. A resistive π-network was built on the HMSIW structure to achieve respective target attenuation levels (1 dB, 2 dB, 3 dB, 4 dB, and 5 dB), where this network is comprised of a set of surface mount technology (SMT) passive resistors. The five different prototypes per attenuation level were evaluated (1-5 dB, 1 dB step) in a band of 7.29-14.9 GHz, and each prototypes simulation and measurement meet the good agreement.

Half-Mode Substrate Integrated Waveguide Amplifier Using Lumped-Element Transition

This paper proposes a half-mode substrate integrated waveguide (HMSIW) amplifier using lumped-element transition. The input and output impedances of this amplifier are matched by the lumped-element transition structure. This structure provides compact impedance and mode matching circuits between the HMSIW and a stand-alone amplifier. Surface mount technology inductors and capacitors are implemented to realize the lumped-element transition. A prototype of the proposed HMSIW amplifier shows 15 dB gain with 3 dB bandwidth of 4 to 7.05 GHz in a simulation and measurement.

SIW/HMSIW-to-microstrip transitions using lumped-elements and their quadrature power divider application

In this work, a SIW-to-microstrip (MS) and a HMSIW-to-MS transition structure using lumped-elements for their quadrature power divider application are proposed. The proposed lumped element structure offers functions of transitions between the SIW/HMSIW and the MS, and ±45° phase shift as well as has a size effective merit in the SIW/HMSIW integrated circuits. The measured quadrature power divider showed an equal power division and a good phase balance between output ports across 4.49 - 5.40 GHz frequency range. The proposed structure may contribute for designing a balanced amplifier in compact SIW circuit and system.

Substrate Integrated Waveguide Transitions to Planar Transmission Lines Using Lumped Elements and Their Applications

A novel scheme for substrate integrated waveguide (SIW) transitions to planar transmission lines is proposed. The idea is the insertion of impedance matching network along with the mode transition realized by a combination of lumped elements. We published earlier similar work. It was a set of the transitions between SIW and microstrip (MS) using lumped elements, and its application as an SIW quadrature power splitter. Throughout that work, the proposed SIW transition using lumped elements was realized focusing only on the MS structure. Now is to widen the use of the proposed transition scheme using lumped elements. In this paper, we propose that transition scheme also works with SIW-to-coplanar waveguide (CPW) and SIW-to-grounded CPW. Also, in addition to the above quadrature power splitter, we show that the proposed scheme can also be used as an SIW balun. Most of the proposed transition schemes yield approximately 0.8- ± 0.5-dB passband insertion losses per target band. Others, such as SIW quadrature power splitter, work with 4- ± 0.5-dB insertion loss per band of 4.2-5.5 GHz, 90° ± 5° phase variation per 4.49-5.9 GHz, and SIW balun works with 4- ± 0.5-dB insertion loss in 4.34-5.29 GHz, 180° ± 5° phase variation in 4.6-5.34 GHz.

Composite EBG Power Plane Using Magnetic Materials for SSN Suppression in High-Speed Digital Circuits

In this paper, a new composite electromagnetic bandgap(EBG) structure using magnetic materials is proposed for simultaneous switching noise(SSN) suppression in the high-speed digital circuits. The proposed EBG structure has periodic unit cells of square-patches connected by spiral-shaped bridges. The magnetic materials are located on the unit cells of spiral-shaped EBG. The real part of the permeability shifts bandgap to the lower frequency region due to the increased effective inductance. The imaginary part of the permeability has magnetic loss that decreases parasitic LC resonance peaks from between the unit cells. As a result, the proposed structure has the lower cut-off frequency compared with conventional EBG structure and -30 dB SSN suppression bandwidth from 175 MHz to 7.7 GHz. The proposed structure is expected to improve the power integrity and reduce the size of the EBG power plane.