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Featured researches published by Dongchan Shin.


Journal of Physics D | 2007

Diamond for bio-sensor applications

Christoph E. Nebel; Bohuslav Rezek; Dongchan Shin; Hiroshi Uetsuka; Nianjun Yang

A summary of photo- and electrochemical surface modifications applied on single-crystalline chemical vapour deposition (CVD) diamond films is given. The covalently bonded formation of amine- and phenyl-linker molecule layers is characterized using x-ray photoelectron spectroscopy, atomic force microscopy (AFM), cyclic voltammetry and field-effect transistor characterization experiments. Amine- and phenyl-layers are very different with respect to formation, growth, thickness and molecule arrangement. We detect a single-molecular layer of amine-linker molecules on diamond with a density of about 1014?cm?2 (10% of carbon bonds). Amine molecules are bonded only on initially H-terminated surface areas to carbon. In the case of electrochemical deposition of phenyl-layers, multi-layer formation is detected due to three-dimensional (3D) growths. This gives rise to the formation of typically 25?? thick layers. The electrochemical grafting of boron-doped diamond works on H-terminated and oxidized surfaces.After reacting such films with hetero-bifunctional crosslinker molecules, thiol-modified ss-DNA markers are bonded to the organic system. Application of fluorescence and AFM on hybridized DNA films shows dense arrangements with densities of up to 1013?cm?2. The DNA is tilted by an angle of about 35? with respect to the diamond surface. Shortening the bonding time of thiol-modified ss-DNA to 10?min causes a decrease of DNA density to about 1012?cm?2. Application of AFM scratching experiments shows threshold removal forces of around 75?nN for DNA bonded on phenyl-linker molecules and of about 45?nN for DNA bonded to amine-linker molecules. DNA sensor applications using Fe(CN6)3?/4? mediator redox molecules, impedance spectroscopy and DNA-field effect transistor devices performances are introduced and discussed.


Journal of the Royal Society Interface | 2007

Diamond and biology

Christoph E. Nebel; Dongchan Shin; Bohuslav Rezek; Norio Tokuda; Hiroshi Uetsuka; Hideyuki Watanabe

A summary of photo- and electrochemical surface modifications applied on single-crystalline chemical vapour deposition diamond films is given. The covalently bonded formation of amine and phenyl linker molecular layers is characterized using X-ray photoelectron spectroscopy, atomic force microscopy (AFM), cyclic voltammetry and field-effect transistor characterization experiments. Amine and phenyl layers are very different with respect to formation, growth, thickness and molecular arrangement. We deduce a sub-monolayer of amine linker molecules on diamond with approximately 10% coverage of 1.5×1015 cm−2 carbon bonds. Amine is bonded only on initially H-terminated surface areas. In the case of electrochemical deposition of phenyl layers, multilayer properties are detected with three-dimensional nitrophenyl growth properties. This leads to the formation of typically 25 Å thick layers. The electrochemical bonding to boron-doped diamond works on H-terminated and oxidized surfaces. After reacting such films with heterobifunctional cross-linker molecules, thiol-modified ss-DNA markers are bonded to the organic system. Application of fluorescence and AFM on hybridized DNA films shows dense arrangements with densities up to 1013 cm−2. The DNA is tilted by an angle of approximately 35° with respect to the diamond surface. Shortening the bonding time of thiol-modified ss-DNA to 10 min causes a decrease in DNA density to approximately 1012 cm−2. Application of AFM scratching experiments shows threshold removal forces of approximately 75 and 45 nN for the DNA bonded to the phenyl and the amine linker molecules, respectively. First, DNA sensor applications using Fe(CN6)3−/4− mediator redox molecules and DNA field-effect transistor devices are introduced and discussed.


Langmuir | 2007

Electrochemical grafting of boron-doped single-crystalline chemical vapor deposition diamond with nitrophenyl molecules

Hiroshi Uetsuka; Dongchan Shin; Norio Tokuda; Kazuhiko Saeki; Christoph E. Nebel


Physica Status Solidi (a) | 2006

Surface electronic properties of H-terminated diamond in contact with adsorbates and electrolytes

Christoph E. Nebel; B. Rezek; Dongchan Shin; Hidekazu Watanabe


Sensors and Actuators B-chemical | 2007

Intrinsic hydrogen-terminated diamond as ion-sensitive field effect transistor

B. Rezek; Dongchan Shin; H. Watanabe; Christoph E. Nebel


Langmuir | 2007

Properties of hybridized DNA arrays on single-crystalline undoped and boron-doped (100) diamonds studied by atomic force microscopy in electrolytes.

Bohuslav Rezek; Dongchan Shin; Christoph E. Nebel


Journal of the American Chemical Society | 2006

Geometric properties of covalently bonded DNA on single-crystalline diamond

Bohuslav Rezek; Dongchan Shin; Takako Nakamura; Christoph E. Nebel


Physica Status Solidi (a) | 2007

Microscopic diagnostics of DNA molecules on mono‐crystalline diamond

Bohuslav Rezek; Dongchan Shin; Hiroshi Uetsuka; Christoph E. Nebel


Electrochemistry Communications | 2006

Periodically arranged benzene-linker molecules on boron-doped single-crystalline diamond films for DNA sensing

Dongchan Shin; Norio Tokuda; B. Rezek; Christoph E. Nebel


Physica Status Solidi (a) | 2006

Photo- and electrochemical bonding of DNA to single crystalline CVD diamond

Dongchan Shin; B. Rezek; Norio Tokuda; Daisuke Takeuchi; Hidekazu Watanabe; Takako Nakamura; T. Yamamoto; Christoph E. Nebel

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Hiroshi Uetsuka

National Institute of Advanced Industrial Science and Technology

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B. Rezek

National Institute of Advanced Industrial Science and Technology

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Takako Nakamura

National Institute of Advanced Industrial Science and Technology

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Bohuslav Rezek

Czech Technical University in Prague

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H. Watanabe

National Institute of Advanced Industrial Science and Technology

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Tomoko Yamamoto

National Institute of Advanced Industrial Science and Technology

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Daisuke Takeuchi

National Institute of Advanced Industrial Science and Technology

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Hidekazu Watanabe

National Institute of Advanced Industrial Science and Technology

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