Donggu Lee

Bright and Efficient Full-Color Colloidal Quantum Dot Light-Emitting Diodes Using an Inverted Device Structure

We report highly bright and efficient inverted structure quantum dot (QD) based light-emitting diodes (QLEDs) by using solution-processed ZnO nanoparticles as the electron injection/transport layer and by optimizing energy levels with the organic hole transport layer. We have successfully demonstrated highly bright red, green, and blue QLEDs showing maximum luminances up to 23,040, 218,800, and 2250 cd/m(2), and external quantum efficiencies of 7.3, 5.8, and 1.7%, respectively. It is also noticeable that they showed turn-on voltages as low as the bandgap energy of each QD and long operational lifetime, mainly attributed to the direct exciton recombination within QDs through the inverted device structure. These results signify a remarkable progress in QLEDs and offer a practicable platform for the realization of QD-based full-color displays and lightings.

Controlling the influence of Auger recombination on the performance of quantum-dot light-emitting diodes

Development of light-emitting diodes (LEDs) based on colloidal quantum dots is driven by attractive properties of these fluorophores such as spectrally narrow, tunable emission and facile processibility via solution-based methods. A current obstacle towards improved LED performance is an incomplete understanding of the roles of extrinsic factors, such as non-radiative recombination at surface defects, versus intrinsic processes, such as multicarrier Auger recombination or electron-hole separation due to applied electric field. Here we address this problem with studies that correlate the excited state dynamics of structurally engineered quantum dots with their emissive performance within LEDs. We find that because of significant charging of quantum dots with extra electrons, Auger recombination greatly impacts both LED efficiency and the onset of efficiency roll-off at high currents. Further, we demonstrate two specific approaches for mitigating this problem using heterostructured quantum dots, either by suppressing Auger decay through the introduction of an intermediate alloyed layer, or by using an additional shell that impedes electron transfer into the quantum dot to help balance electron and hole injection.

Multicolored Light-Emitting Diodes Based on All-Quantum-Dot Multilayer Films Using Layer-by-Layer Assembly Method

A systematic analysis of the exciton-recombination zone within all-quantum dot (QD) multilayer films prepared by a layer-by-layer assembly method was made, using sensing QD layers in QD-based light-emitting diodes (QLEDs). Large area practical multicolored colloidal QLEDs were also demonstrated by patterning and placing variously colored QDs (red, orange, yellow-green, and green) in the exciton-recombination zone.

Highly efficient cadmium-free quantum dot light-emitting diodes enabled by the direct formation of excitons within InP@ZnSeS quantum dots.

We demonstrate bright, efficient, and environmentally benign InP quantum dot (QD)-based light-emitting diodes (QLEDs) through the direct charge carrier injection into QDs and the efficient radiative exciton recombination within QDs. The direct exciton formation within QDs is facilitated by an adoption of a solution-processed, thin conjugated polyelectrolyte layer, which reduces the electron injection barrier between cathode and QDs via vacuum level shift and promotes the charge carrier balance within QDs. The efficient radiative recombination of these excitons is enabled in structurally engineered InP@ZnSeS heterostructured QDs, in which excitons in the InP domain are effectively passivated by thick ZnSeS composition-gradient shells. The resulting QLEDs record 3.46% of external quantum efficiency and 3900 cd m(-2) of maximum brightness, which represent 10-fold increase in device efficiency and 5-fold increase in brightness compared with previous reports. We believe that such a comprehensive scheme in designing device architecture and the structural formulation of QDs provides a reasonable guideline for practical realization of environmentally benign, high-performance QLEDs in the future.

R/G/B/Natural White Light Thin Colloidal Quantum Dot‐Based Light‐Emitting Devices

Bright, low-voltage driven colloidal quantum dot (QD)-based white light-emitting devices (LEDs) with practicable device performances are enabled by the direct exciton formation within quantum-dot active layers in a hybrid device structure. Detailed device characterization reveals that white-QLEDs can be rationalized as a parallel circuit, in which different QDs are connected through the same set of electrically common organic and inorganic charge transport layers.

The effect of band gap alignment on the hole transport from semiconducting block copolymers to quantum dots

Semiconducting hole transporting block copolymers were chemically modified to adjust their energy levels to that of CdSe/CdS/CdZnS red quantum dots. Hybrids with optimized energy levels could be used to build strongly improved quantum dot based LEDs (QLEDs).

Study of the Cesium Carbonate (Cs2CO3) Inter Layer Fabricated by Solution Process on P3HT:PCBM Solar Cells

In this paper, we studied the effect of the electron injection layer, Cesium carbonate (Cs2CO3), thickness on the performance of organic solar cell (OSC) based on blends of poly (3-hexylthiophene) (P3HT) and [6,6]-phenyl-C61 butyric acid methyl ester fullerene derivative (PCBM). The polymer solar cell consists of molybdenum-oxide (MoO3) as a hole injection layer, P3HT and PCBM bulk hetero junction as an active layer, and Cesium carbonate (Cs2CO3) as an electron injection layer. We measured each device by current-voltage measurement and impedance spectroscopy which is widely used for equivalent circuit analysis of solid state structures. The device with the Cs2CO3 layer showed about 8–10% higher JSC and about 6–8% higher power conversion efficiency compared with the devices without the Cs2CO3 layer.

Reduced efficiency roll-off in light-emitting diodes enabled by quantum dot–conducting polymer nanohybrids

We demonstrate QLEDs implementing wider active layers (50 nm) based on QD–conducting polymer nanohybrids, which exhibit a stable operational device performance across a wide range of current densities and brightness. A comparative study reveals that the significant suppression of efficiency roll-off in the high current density regime is primarily attributed to a sufficient charge carrier distribution over the wider active layer and improved charge carrier balance within QDs enabled by the hybridization of QDs with conducting polymers. Utilization of this finding in future studies should greatly facilitate the development of high performance, stable QLEDs at high current density or luminance regime toward displays or solid-state lighting applications.

The influence of sequential ligand exchange and elimination on the performance of P3HT:CdSe quantum dot hybrid solar cells

We report on a sequential ligand exchange and elimination process for the fast and easy surface modification of CdSe quantum dots (QDs) in order to improve the electronic interaction between poly(3-hexylthiophene) (P3HT) and CdSe QDs in P3HT:CdSe hybrid solar cells. We systematically investigated the influence of surface treatment on the insulating ligand shell of CdSe QDs using (1)H-NMR analysis, and correlated their influence on the photovoltaic properties of P3HT:CdSe hybrid solar cells. A decrease in the average thickness of the ligand shells directly improved carrier transport properties. Moreover, the presence of remnant 1-hexylamine ligands provided efficient surface trap passivation. As a result, overall solar cell performance (especially fill factor and power conversion efficiency) was enhanced and the recombination mechanism was dominated by monomolecular recombination due to enhanced carrier collection length (l(C0)).

Nanostructured Electron-Selective Interlayer for Efficient Inverted Organic Solar Cells.

We report a unique nanostructured electron-selective interlayer comprising of In-doped ZnO (ZnO:In) and vertically aligned CdSe tetrapods (TPs) for inverted polymer:fullerene bulkheterojunction (BHJ) solar cells. With dimension-controlled CdSe TPs, the direct inorganic electron transport pathway is provided, resulting in the improvement of the short circuit current and fill factor of devices. We demonstrate that the enhancement is attributed to the roles of CdSe TPs that reduce the recombination losses between the active layer and buffer layer, improve the hole-blocking as well as electron-transporting properties, and simultaneously improve charge collection characteristics. As a result, the power conversion efficiency of PTB7:PC70BM based solar cell with nanostructured CdSe TPs increases to 7.55%. We expect this approach can be extended to a general platform for improving charge extraction in organic solar cells.