Dongxia Shi

Argon Plasma Induced Phase Transition in Monolayer MoS2

In this work, we report a facile, clean, controllable and scalable phase engineering technique for monolayer MoS2. We found that weak Ar-plasma bombardment can locally induce 2H→1T phase transition in monolayer MoS2 to form mosaic structures. These 2H→1T phase transitions are stabilized by point defects (single S-vacancies) and the sizes of induced 1T domains are typically a few nanometers, as revealed by scanning tunneling microscopy measurements. On the basis of a selected-area phase patterning process, we fabricated MoS2 FETs inducing 1T phase transition within the metal contact areas, which exhibit substantially improved device performances. Our results open up a new route for phase engineering in monolayer MoS2 and other transition metal dichalcogenide (TMD) materials.

Graphene‐Contacted Ultrashort Channel Monolayer MoS2 Transistors

2D semiconductors are promising channel materials for field-effect transistors (FETs) with potentially strong immunity to short-channel effects (SCEs). In this paper, a grain boundary widening technique is developed to fabricate graphene electrodes for contacting monolayer MoS2 . FETs with channel lengths scaling down to ≈4 nm can be realized reliably. These graphene-contacted ultrashort channel MoS2 FETs exhibit superior performances including the nearly Ohmic contacts and excellent immunity to SCEs. This work provides a facile route toward the fabrication of various 2D material-based devices for ultrascaled electronics.

From Type-II Triply Degenerate Nodal Points and Three-Band Nodal Rings to Type-II Dirac Points in Centrosymmetric Zirconium Oxide

Using first-principles calculations, we report that ZrO is a topological material with the coexistence of three pairs of type-II triply degenerate nodal points (TNPs) and three nodal rings (NRs), when spin-orbit coupling (SOC) is ignored. Noticeably, the TNPs reside around the Fermi energy with a large linear energy range along the tilt direction (>1 eV), and the NRs are formed by three strongly entangled bands. Under symmetry-preserving strain, each NR would evolve into four droplet-shaped NRs before fading away, producing distinct evolution compared with that in usual two-band NR. When SOC is included, TNPs would transform into type-II Dirac points while all of the NRs are gapped. Remarkably, the type-II Dirac points inherit the advantages of TNPs: residing around the Fermi energy and exhibiting a large linear energy range. Both features facilitate the observation of interesting phenomena induced by type-II dispersion. The symmetry protections and low-energy Hamiltonian for the nontrivial band crossings are discussed.

Wafer-Scale Growth and Transfer of Highly-Oriented Monolayer MoS2 Continuous Films

Large scale epitaxial growth and transfer of monolayer MoS2 has attracted great attention in recent years. Here, we report the wafer-scale epitaxial growth of highly oriented continuous and uniform monolayer MoS2 films on single-crystalline sapphire wafers by chemical vapor deposition (CVD) method. The epitaxial film is of high quality and stitched by many 0°, 60° domains and 60°-domain boundaries. Moreover, such wafer-scale monolayer MoS2 films can be transferred and stacked by a simple stamp-transfer process, and the substrate is reusable for subsequent growth. Our progress would facilitate the scalable fabrication of various electronic, valleytronic, and optoelectronic devices for practical applications.

Modulating PL and electronic structures of MoS2/graphene heterostructures via interlayer twisting angle

Stacking two-dimensional materials into van der Waals heterostructures with distinct interlayer twisting angles opens up new strategies for electronic structure and physical property engineering. Here, we investigate how the interlayer twisting angles affect the photoluminescence (PL) and Raman spectra of the MoS2/graphene heterostructures. Based on a series of heterostructure samples with different interlayer twisting angles, we found that the PL and Raman spectra of the monolayer MoS2 in these heterostructures are strongly twisting angle dependent. When the interlayer twisting angle evolves from 0° to 30°, both the PL intensity and emission energy increase, while the splitting of the E2g Raman mode decreases gradually. The observed phenomena are attributed to the twisting angle dependent interlayer interaction and misorientation-induced lattice strain between MoS2 and graphene.