Douglas Albagli

Performance of advanced a-Si/CsI-based flat-panel x-ray detectors for mammography

The GE Senographe 2000D, the first full field digital mammography system based on amorphous Silicon (a-Si) flat panel arrays and a Cesium-Iodide (CsI) scintillator, has been in clinical use for several years. The purpose of this paper is to demonstrate and quantify improvements in the detective quantum efficiency (DQE) for both typical screening and ultra-low exposure levels for this technology platform. A new figure of merit, the electronic noise factor, is introduced to explicitly quantify the influence of the electronic noise, conversion factor, modulation transfer function (MTF), and pixel pitch towards the reduction of DQE at low exposure levels. Methods to improve the DQE through an optimization of both the flat panel design and the scintillator deposition process are discussed. The results show a substantial improvement in the DQE(f) at all frequencies and demonstrate the potential for DQE(0) to exceed 80%. The combination of high DQE at ultra low exposures and the inherent fast read-out capability makes this technology platform ideal for both current clinical procedures and advanced applications that may use multiple projections (tomosynthesis) or contrast media to enhance digital mammography.

Enhanced a-Si/CsI-based flat-panel x-ray detector for mammography

The GE Senographe 2000D, the first full field digital mammography system based on amorphous silicon (a-Si) flat panel arrays and a cesium iodide (CsI) scintillator, has been in clinical use for over five years. One of the major advantages of this technology platform over competing platforms is the inherent flexibility of the design. Specifically, it is possible to optimize the x-ray conversion layer (scintillator) independently of the light conversion layer (panel) and vice versa. This is illustrated by a new detector utilizing the same amorphous silicon (a-Si) flat panel design, but an optimized scintillator layer, which provides up to 15% higher DQE than the existing detector. By utilizing the existing flat panel with an optimized scintillator layer, it is possible to significantly boost performance without changes to the panel design. Future enhancements to both the panel and scintillator will raise the DQE at zero frequency to more than 80%. The a-Si/CsI platform is especially well suited to advanced applications utilizing very low doses.

Mammography tomosynthesis system for high performance 3D imaging

Tomosynthesis provides a major advance in image quality compared to conventional projection mammography by effectively eliminating the effects of superimposed tissue on anatomical structures of interest. Early tomosynthesis systems focused primarily on feasibility assessment by providing 3-dimensional images to determine performance advantages. However, tomosynthesis image quality depends strongly on three key parameters: 1) detector performance at low dose, 2) angular range and number of projections acquired in the tomosynthesis scan, and 3) reconstruction algorithm processing characteristics used to create slice images from the measured projections. In this work, a new GE mammo-graphy tomosynthesis research system was developed that incorporates key improvements in each of these three areas compared to an early feasibility prototype system in use at Massachusetts General Hospital from 2000 to 2004. The performance gains that can be achieved by these enhancements are cha-racterized, and clinical images acquired with the system at the University of Michigan Cancer and Geriatrics Center are presented. The advanced research system also provides the ability to acquire mechanically co-registered x-ray tomosynthesis and ultrasound images of the breast, and initial dual modality images are also presented.

Performance of optimized amorphous silicon, cesium-iodide based large field-of-view detector for mammography

The purpose of this paper is to provide a performance characterization of a new large field-of-view (LFOV) flat panel detector with a novel pixel design that has been optimized for both screening mammography and low dose advanced applications such as tomosynthesis. The measurements reported here were performed on prototype x-ray imagers for GEs upcoming LFOV mammography system. In addition to a light sensitive photodiode and a field effect transistor (FET), a storage capacitor has been added to each pixel in order to increase the dynamic range. In order to characterize the performance of the detector, measurements of the MTF, noise power spectrum, DQE, electronic noise, conversion factor, and lag were made. The results show that the new detector can deliver a DQE at 0 and 5 lp/mm of 72% and 28% while maintaining an MTF at 5 lp/mm of 30%. The addition of a storage capacitor at each pixel allows the conversion factor to be increased to reduce the noise floor - leading to a 400% extension of the dynamic range. Finally, a re-design of the FET and photodiode to reduce the time constants allows a 10X reduction in the lag that enables up to 4 frame per second imaging with less than 1% lag. This work represents the first results from a next generation large field of view a Si/CsI based x-ray imager for mammography and shows that a single detector can achieve high performance standards for both high dose screening and low dose, fast acquisition tomosynthesis simultaneously.

Gated Diode Design to Mitigate Radiation Damage in X-Ray Imagers

Radiation damage of amorphous silicon X-ray imagers leads to degradation of the detectors performance due to increased diode perimeter leakage. To reduce the effect of this damage, a novel pixel device based on a gated diode was fabricated. The additional gate metalization placed on the perimeter of the diode modulates the surface side-wall leakage and has been tested up to a 64 kGy absorbed dose in the diode. This new pixel design significantly reduces the increase in diode leakage and noise due to radiation damage, providing a more uniform performance and extending the lifetime of the imager.

Performance tests on a-Si TFT arrays for flat panel digital x-ray detectors

We report on a set of tests that measure the performance of a-Si flat panel TFT arrays used in digital x-ray detectors. During production of high performance TFT panels for applications such as mammography it is important to verify the integrity and quality of the TFT array at progressive stages of production. Early identification of failing TFT arrays as well as continuous monitoring of the production process can result in early termination of poor quality panels, quick identification of the root cause of failures, and correction of process drift to prevent failures from occurring. We present results of a system designed to test the performance of a-Si TFT arrays during the production process. Metrics which are important to x-ray image quality were tested, including FET performance, pixel capacitance, storage capacitor lag and diode leakage. Functional tests were performed entirely on pixels in the imaging array using timing and biasing conditions that mimic x-ray illumination.