Aaron Judy Couture

ToF-SIMS depth profiling of organic solar cell layers using an Ar cluster ion source

Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) is a very powerful technique for analyzing the outermost layers of organic and biological materials. The ion fluence in static SIMS is usually kept low enough to prevent decomposition of the organic/molecular species and as a result ToF-SIMS is able to detect and image high mass molecular species, such as polymer additives. Depth profiling, in contrast, uses a high ion fluence in order to remove material between each analysis cycle. Unfortunately, the high ion fluence results in not only erosion but also decomposition of the organic species. Recently, high mass Ar cluster ion sources have become available and are enabling depth profiling through organic layers. In this paper, the authors demonstrate that they can obtain and maintain molecular information throughout an organic solar cell test layer when erosion is performed using an Ar1500+ cluster ion source for material removal. Contrary they show that they cannot maintain molecular information when low energy monoatomic ion beams are used for material removal.Time-of-flight secondary ion mass spectroscopy (ToF-SIMS) is a very powerful technique for analyzing the outermost layers of organic and biological materials. The ion fluence in static SIMS is usually kept low enough to prevent decomposition of the organic/molecular species and as a result ToF-SIMS is able to detect and image high mass molecular species, such as polymer additives. Depth profiling, in contrast, uses a high ion fluence in order to remove material between each analysis cycle. Unfortunately, the high ion fluence results in not only erosion but also decomposition of the organic species. Recently, high mass Ar cluster ion sources have become available and are enabling depth profiling through organic layers. In this paper, the authors demonstrate that they can obtain and maintain molecular information throughout an organic solar cell test layer when erosion is performed using an Ar1500+ cluster ion source for material removal. Contrary they show that they cannot maintain molecular information wh...

Performance of optimized amorphous silicon, cesium-iodide based large field-of-view detector for mammography

The purpose of this paper is to provide a performance characterization of a new large field-of-view (LFOV) flat panel detector with a novel pixel design that has been optimized for both screening mammography and low dose advanced applications such as tomosynthesis. The measurements reported here were performed on prototype x-ray imagers for GEs upcoming LFOV mammography system. In addition to a light sensitive photodiode and a field effect transistor (FET), a storage capacitor has been added to each pixel in order to increase the dynamic range. In order to characterize the performance of the detector, measurements of the MTF, noise power spectrum, DQE, electronic noise, conversion factor, and lag were made. The results show that the new detector can deliver a DQE at 0 and 5 lp/mm of 72% and 28% while maintaining an MTF at 5 lp/mm of 30%. The addition of a storage capacitor at each pixel allows the conversion factor to be increased to reduce the noise floor - leading to a 400% extension of the dynamic range. Finally, a re-design of the FET and photodiode to reduce the time constants allows a 10X reduction in the lag that enables up to 4 frame per second imaging with less than 1% lag. This work represents the first results from a next generation large field of view a Si/CsI based x-ray imager for mammography and shows that a single detector can achieve high performance standards for both high dose screening and low dose, fast acquisition tomosynthesis simultaneously.

Optically Seamless Flexible Electronic Tiles for Ultra Large-Area Digital X-Ray Imaging

This paper presents a new flexible electronics assembly technique that combines individual digital X-ray detectors to create a much larger composite digital X-ray detector. The new assembly technique uses multiple flexible digital X-ray detectors manufactured on a thin, transparent, and flexible plastic substrate, which are overlapped to create the larger composite X-ray detector. The assembly technique, illustrated in a mechanical mockup, is optically seamless, and has the ability to scale up to extremely large X-ray imaging arrays. Feasibility and preliminary imaging performance were demonstrated by tiling several 16 × 16 pixel resolution prototype flexible X-ray detector test structures. Optical losses under typical digital radiography conditions were also measured by overlapping a plastic substrate flexible X-ray detector onto a commercial glass substrate digital X-ray imaging array. Approximately 5% signal loss was observed in the transparent plastic overlap region, and the seam edge imaging artifact was demonstrated to be correctable using commercial gain calibration. A key medical imaging application for this technology is single-exposure, low-dose, and full-body digital radiography.

Gated Diode Design to Mitigate Radiation Damage in X-Ray Imagers

Radiation damage of amorphous silicon X-ray imagers leads to degradation of the detectors performance due to increased diode perimeter leakage. To reduce the effect of this damage, a novel pixel device based on a gated diode was fabricated. The additional gate metalization placed on the perimeter of the diode modulates the surface side-wall leakage and has been tested up to a 64 kGy absorbed dose in the diode. This new pixel design significantly reduces the increase in diode leakage and noise due to radiation damage, providing a more uniform performance and extending the lifetime of the imager.

Performance tests on a-Si TFT arrays for flat panel digital x-ray detectors

We report on a set of tests that measure the performance of a-Si flat panel TFT arrays used in digital x-ray detectors. During production of high performance TFT panels for applications such as mammography it is important to verify the integrity and quality of the TFT array at progressive stages of production. Early identification of failing TFT arrays as well as continuous monitoring of the production process can result in early termination of poor quality panels, quick identification of the root cause of failures, and correction of process drift to prevent failures from occurring. We present results of a system designed to test the performance of a-Si TFT arrays during the production process. Metrics which are important to x-ray image quality were tested, including FET performance, pixel capacitance, storage capacitor lag and diode leakage. Functional tests were performed entirely on pixels in the imaging array using timing and biasing conditions that mimic x-ray illumination.