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Dive into the research topics where Dustin A. Hite is active.

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Featured researches published by Dustin A. Hite.


Physical Review Letters | 2004

Observation of quantum oscillations between a Josephson phase qubit and a microscopic resonator using fast readout.

K. Cooper; Matthias Steffen; Robert McDermott; Raymond W. Simmonds; Seongshik Oh; Dustin A. Hite; David P. Pappas; John M. Martinis

We have detected coherent quantum oscillations between Josephson phase qubits and critical-current fluctuators by implementing a new state readout technique that is an order of magnitude faster than previous methods. These results reveal a new aspect of the quantum behavior of Josephson junctions, and they demonstrate the means to measure two-qubit interactions in the time domain. The junction-fluctuator interaction also points to a possible mechanism for decoherence and reduced fidelity in superconducting qubits.


Applied Physics Letters | 2010

Low loss superconducting titanium nitride coplanar waveguide resonators

Michael R. Vissers; Jiansong Gao; David Wisbey; Dustin A. Hite; Chang C. Tsuei; Antonio Corcoles; Matthias Steffen; David P. Pappas

Thin films of TiN were sputter-deposited onto Si and sapphire wafers with and without SiN buffer layers. The films were fabricated into rf coplanar waveguide resonators, and internal quality factor measurements were taken at millikelvin temperatures in both the many photon and single photon limits, i.e., high and low electric field regimes, respectively. At high field, we found the highest internal quality factors (∼107) were measured for TiN with predominantly a (200)-TiN orientation. The (200)-TiN is favored for growth at high temperature on either bare Si or SiN buffer layers. However, growth on bare sapphire or Si(100) at low temperature resulted in primarily a (111)-TiN orientation. Ellipsometry and Auger measurements indicate that the (200)-TiN growth on the bare Si substrates is correlated with the formation of a thin, ≈2 nm, layer of SiN during the predeposition procedure. On these surfaces we found a significant increase of Qi for both high and low electric field regimes.


Review of Scientific Instruments | 2004

Conducting atomic force microscopy for nanoscale tunnel barrier characterization

Kristine Lang; Dustin A. Hite; Raymond W. Simmonds; Robert McDermott; David P. Pappas; John M. Martinis

Increasing demands on nanometer-scale properties of oxide tunnel barriers necessitate a consistent means to assess them on these length scales. Conducting atomic force microscopy (CAFM) is a promising technique both for understanding connections between nanoscale tunnel barrier characteristics and macroscopic device performance as well as for rapid qualitative evaluation of new fabrication methods and materials. Here we report CAFM characterization of aluminum oxide (AlOx) barriers to be used in Josephson-junction qubits, with a particular emphasis on developing reproducible imaging conditions and appropriate interpretation. We find that control of the imaging force is a critical factor for reproducibility. We imaged the same sample on the same day with the same cantilever varying only the imaging force between scans. Statistical properties compiled from the resulting current maps varied approximately exponentially with imaging force, with typical currents increasing by two orders of magnitude for only a ...


Physical Review Letters | 2012

100-fold reduction of electric-field noise in an ion trap cleaned with in situ argon-ion-beam bombardment.

Dustin A. Hite; Yves Colombe; Andrew C. Wilson; Kenton R. Brown; U. Warring; Robert Jördens; J. D. Jost; Kyle S. McKay; David P. Pappas; D. Leibfried; David J. Wineland

Anomalous heating of trapped atomic ions is a major obstacle to their use as quantum bits in a scalable quantum computer. The physical origin of this heating is not fully understood, but experimental evidence suggests that it is caused by electric-field noise emanating from the surface of the trap electrodes. In this study, we have investigated the role that adsorbates on the electrodes play by identifying contaminant overlayers, developing an in situ argon-ion beam cleaning procedure, and measuring ion heating rates before and after cleaning the trap electrodes’ surfaces. We find a reduction of two orders of magnitude in heating rate after cleaning.


Journal of Physics: Condensed Matter | 2004

Surface reconstruction of FeAl(110) studied by scanning tunnelling microscopy and angle-resolved photoemission spectroscopy

Orhan Kizilkaya; Dustin A. Hite; D. M. Zehner; Phillip T. Sprunger

The surface geometric and electronic structure of the FeAl(110) intermetallic alloy has been investigated by scanning tunnelling microscopy and angle-resolved photoemission spectroscopy (ARPES). Preferential sputtering results in depletion of Al in the surface region and subsequent annealing promotes surface segregation of Al and gives rise to new reconstructed phases. A bulk terminated surface structure is obtained after annealing the surface to 400 °C. However, an incommensurate phase develops above 800 °C with a stoichiometry consistent with an FeAl2 structure in the topmost layer. The ARPES measurements confirm the Al segregation with increased density of states (DOS) near the Fermi level. The increased DOS is believed to be due to hybridization between the Fe d and Al sp states. The increased intensity of the Al 2p core level for the incommensurate phase also confirms the higher Al surface concentration for this phase.


Journal of Applied Physics | 2003

In situ conductance characterization of Fe/Ag multilayer contacts on GaAs

Dustin A. Hite; Stephen E. Russek; David P. Pappas

Electrical transport characteristics for epitaxially grown Ag/Fe/Ag multilayers on GaAs(100) and GaAs(110) have been studied under various growth conditions. The surfaces and structure of the multilayer were characterized by low energy electron diffraction and angle-resolved Auger electron spectroscopy/diffraction at all stages of the growth. In situ conductance spectroscopy performed between growth steps indicates a strong dependence of the transport characteristics on the morphology at the metal/semiconductor interface. A nanoclustered silver overlayer exhibits a reverse leakage current due to defect states in the discontinuous film; however, annealed continuous Ag overlayers on GaAs behave as a uniform rectifying diode. After completion of the magnetic multilayer growth, current–voltage characteristics indicate a sharp turn on in the reverse current at ∼0.6 V with nonlinear behavior. This is characteristic of electron tunneling through the Schottky barrier from the multilayer contact into the semicondu...


Review of Scientific Instruments | 2013

Micro-fabricated stylus ion trap

Christian L. Arrington; Kyle S. McKay; Ehren Baca; Jonathan Joseph Coleman; Yves Colombe; Patrick Sean Finnegan; Dustin A. Hite; Andrew E. Hollowell; Robert Jördens; J. D. Jost; D. Leibfried; Adam M. Rowen; U. Warring; Martin Weides; Andrew C. Wilson; David J. Wineland; David P. Pappas

An electroformed, three-dimensional stylus Paul trap was designed to confine a single atomic ion for use as a sensor to probe the electric-field noise of proximate surfaces. The trap was microfabricated with the UV-LIGA technique to reduce the distance of the ion from the surface of interest. We detail the fabrication process used to produce a 150 μm tall stylus trap with feature sizes of 40 μm. We confined single, laser-cooled, (25)Mg(+) ions with lifetimes greater than 2 h above the stylus trap in an ultra-high-vacuum environment. After cooling a motional mode of the ion at 4 MHz close to its ground state ( = 0.34 ± 0.07), the heating rate of the trap was measured with Raman sideband spectroscopy to be 387 ± 15 quanta/s at an ion height of 62 μm above the stylus electrodes.


MRS Advances | 2017

Measurements of trapped-ion heating rates with exchangeable surfaces in close proximity

Dustin A. Hite; Kyle S. McKay; Shlomi Kotler; D. Leibfried; David J. Wineland; David P. Pappas

Electric-field noise from the surfaces of ion-trap electrodes couples to the ions charge causing heating of the ions motional modes. This heating limits the fidelity of quantum gates implemented in quantum information processing experiments. The exact mechanism that gives rise to electric-field noise from surfaces is not well-understood and remains an active area of research. In this work, we detail experiments intended to measure ion motional heating rates with exchangeable surfaces positioned in close proximity to the ion, as a sensor to electric-field noise. We have prepared samples with various surface conditions, characterized in situ with scanned probe microscopy and electron spectroscopy, ranging in degrees of cleanliness and structural order. The heating-rate data, however, show no significant differences between the disparate surfaces that were probed. These results suggest that the driving mechanism for electric-field noise from surfaces is due to more than just thermal excitations alone.


Applied Physics Letters | 2018

Enhanced superconducting transition temperature in electroplated rhenium

David P. Pappas; Donald E. David; Russell Lake; Mustafa Bal; Ronald B. Goldfarb; Dustin A. Hite; Eunja Kim; Hsiang-Sheng Ku; Junling Long; Corey Rae McRae; Lee D. Pappas; Alexana Roshko; Jianguo Wen; B.L.T. Plourde; Ilke Arslan; Xian Wu

We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a critical temperature of approximately 6 K. The magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper critical field on the order of 2.5 T. Critical current densities greater than 107 A/m2 were measured above liquid-helium temperature. Low-loss at radio frequency was obtained below the critical temperature for multilayers deposited onto resonators made with Cu traces on commercial circuit boards. These electroplated superconducting films can be integrated into a wide range of standard components for low-temperature electronics.We show that electroplated Re films in multilayers with noble metals such as Cu, Au, and Pd have an enhanced superconducting critical temperature relative to previous methods of preparing Re. The dc resistance and magnetic susceptibility indicate a critical temperature of approximately 6 K. The magnetic response as a function of field at 1.8 K demonstrates type-II superconductivity, with an upper critical field on the order of 2.5 T. Critical current densities greater than 107 A/m2 were measured above liquid-helium temperature. Low-loss at radio frequency was obtained below the critical temperature for multilayers deposited onto resonators made with Cu traces on commercial circuit boards. These electroplated superconducting films can be integrated into a wide range of standard components for low-temperature electronics.


Physical Review A | 2017

Electric-field noise from carbon-adatom diffusion on a Au(110) surface: First-principles calculations and experiments

Eunja Kim; Arghavan Safavi-Naini; Dustin A. Hite; Kyle S. McKay; David P. Pappas; P. F. Weck; H. R. Sadeghpour

The decoherence of trapped-ion quantum gates due to heating of their motional modes is a fundamental science and engineering problem. This heating is attributed to electric-field noise arising from the trap-electrode surfaces. In this work, we investigate the source of this noise by focusing on the diffusion of carbon-containing adsorbates on the surface of Au(110). We show by density functional theory, based on detailed scanning probe microscopy, how the carbon adatom diffusion on the gold surface changes the energy landscape and how the adatom dipole moment varies with the diffusive motion. A simple model for the diffusion noise, which varies quadratically with the variation of the dipole moment, predicts a noise spectrum, in accordance with the measured values.

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David P. Pappas

National Institute of Standards and Technology

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Raymond W. Simmonds

National Institute of Standards and Technology

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Robert Francis McDermott

National Institute of Standards and Technology

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D. Leibfried

National Institute of Standards and Technology

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David J. Wineland

National Institute of Standards and Technology

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