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Featured researches published by E.A. Avrutin.


Journal of Crystal Growth | 1997

Miscibility gap of ternary alloys of binary compounds with zinc-blende and wurtzite structures using the cluster variation method

V.A. Elyukhin; E.L. Portnoi; E.A. Avrutin; J.H. Marsh

The miscibility gap of the AxB1 − xC ternary alloys is described using the cluster variation method with a tetrahedron as the basic cluster. The maximum temperature of the boundary of miscibility gap is Tt = 0.835α/2R. It is shown that the miscibility gaps of AxB1 − xC ternary alloys with zinc-blende and wurtzite structures coincide in the approximation used.


Second International Conference on Optical Information Processing | 1996

Peculiarities of application of multimode semiconductor lasers for recording deep holograms

Mikhail I. Nemenov; E.A. Avrutin

An analysis of the applicability of multimode laser diodes (LDs) in holography is presented. Coherence properties of the two most probable regimes of multimode operation, free- running and phase locked, are analyzed. Prospectives of the use of multimode LDs in recording deep holograms are estimated theoretically and experimentally.


9th Meeting on Optical Engineering in Israel | 1995

Monolithically integrated optoelectronic down-converter (MIOD)

Efrim L. Portnoi; G. B. Venus; A. A. Khazan; Vera Gorfinkel; G. Kompa; E.A. Avrutin; I.G. Thayne; D.A. Barrow; J.H. Marsh

Optoelectronic down-conversion of very high-frequency amplitude-modulated signals using a semiconductor laser simultaneously as a local oscillator and a mixer is proposed. Three possible constructions of a monolithically integrated down-converter are considered theoretically: a four-terminal semiconductor laser with dual pumping current/modal gain control, and both a passively mode-locked and a passively Q-switched semiconductor laser monolithically integrated with an electroabsorption or pumping current modulator. Experimental verification of the feasibility of the concept of down conversion in a laser diode is presented.


Ultra- Wideband Short-Pulse Electromagnetics 4 (IEEE Cat. No.98EX112) | 1998

Analysis of nonlinear optical-electromagnetic interactions in ultrafast mode-locked laser diodes

J.M. Arnold; E.A. Avrutin; J.H. Marsh; E.L. Portnoi

The operation of mode-locked (ML) semiconductor laser diodes (LDs), in common with lasers of other types, is a nonlinear process in which a balance of dispersion and various nonlinearities results in the generation of an ultrashort optical pulse, repeated at the cavity round-trip frequency or its harmonic and with parameters, averaged over a round-trip, constant, similar to an optical soliton. In this paper we theoretically analyse the fundamentals of high-frequency mode-locked laser diodes and their application to generating and/or frequency shifting ultrafast electrical signals.


lasers and electro optics society meeting | 1997

Calculation of spinodal decomposition temperature in cubic ternary nitride materials including coherency stress and spontaneous ordering

V.A. Elyukhin; E.A. Avrutin; J.H. Marsh; E.L. Portnoi

We present a calculation of spinodal decomposition temperatures for a variety of nitride compounds taking into account both the coherency stress and an arbitrary degree of ordering and show that, for a given composition, superstructures tend to have lower decomposition temperatures than random alloys and may therefore be advantageous.


Laser Optics '95: Nonlinear Dynamics in Lasers | 1996

Analysis of Locked and Unlocked Dynamics of a Passively Mode Locked Laser Diode under External Periodic Excitation.

E.A. Avrutin; J.M. Arnold; J.H. Marsh

A distributed time-domain model is used for a numerical analysis of the dynamics of a passively mode locked laser diode under external modulation at a frequency close to the round-trip frequency of the laser. The possible dynamical regimes of the laser are identified as synchronization locking, frequency mixing and chaotic dynamics, including a special case of quasi-locking. For the locked regime, steady-state parameters are defined, the crucial role of group-velocity dispersion in achieving locking demonstrated and stages of the locking dynamics and corresponding time constants identified.


Laser Diodes and Applications II | 1996

Multimode semiconductor lasers: the simplest light sources for holography?

Mikhail I. Nemenov; E.A. Avrutin

Criteria for the applicability of multimode laser diodes (LDs) with total emission spectra as broad as 10-30 A in holography are considered. Coherence properties of the two most probable regimes of multimode operation, free-running and phase locked, are analyzed. Prospectives of the use of multimode LDs in recording deep holograms are estimated theoretically and experimentally.


IEE Proceedings - Optoelectronics | 2000

Monolithic and multi-gigahertz mode-locked semiconductor lasers: constructions, experiments, models and applications

E.A. Avrutin; J.H. Marsh; E.L. Portnoi


Electronics Letters | 1998

Longitudinal mode grouping in InGaAs/GaAs/AlGaAs quantum dot lasers: origin and means of control

Eoin P. O'Reilly; A.I. Onischenko; E.A. Avrutin; D. Bhattacharyya; J.H. Marsh


IEE Proceedings - Optoelectronics | 1996

Analysis of dynamics of monolithic passively mode-locked laser diodes under external periodic excitation

E.A. Avrutin; J.M. Arnold; J.H. Marsh

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Vera Gorfinkel

State University of New York System

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G. Kompa

University of Kassel

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Eoin P. O'Reilly

Tyndall National Institute

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