E. A. Payzant

MOD approach for the growth of epitaxial CeO2 buffer layers on biaxially textured Ni-W substrates for YBCO coated conductors

We have grown epitaxial CeO2 buffer layers on biaxially textured Ni–W substrates for YBCO coated conductors using a newly developed metal organic decomposition (MOD) approach. Precursor solution of 0.25 M concentration was spin coated on short samples of Ni–3 at%W (Ni–W) substrates and heat-treated at 1100 °C in a gas mixture of Ar–4%H2 for 15 min. Detailed x-ray studies indicate that CeO2 films have good out-of-plane and in-plane textures with full-width-half-maximum values of 5.8° and 7.5°, respectively. High temperature in situ XRD studies show that the nucleation of CeO2 films starts at 600 °C and the growth completes within 5 min when heated at 1100 °C. SEM and AFM investigations of CeO2 films reveal a fairly dense microstructure without cracks and porosity. Highly textured YSZ barrier layers and CeO2 cap layers were deposited on MOD CeO2-buffered Ni–W substrates using rf-magnetron sputtering. Pulsed laser deposition (PLD) was used to grow YBCO films on these substrates. A critical current, Jc, of about 1.5 MA cm−2 at 77 K and self-field was obtained on YBCO (PLD)/CeO2 (sputtered)/YSZ (sputtered)/CeO2 (spin-coated)/Ni–W.

PS‐b‐P3HT Copolymers as P3HT/PCBM Interfacial Compatibilizers for High Efficiency Photovoltaics

A conducting diblock copolymer of PS-b-P3HT was added to serve as a compatibilizer in a P3HT/PCBM blend, which improved the power-conversion efficiency from 3.3% to 4.1% due to the enhanced crystallinity, morphology, interface interaction, and depth profile of PCBM.

Surface-Induced Orientation Control of CuPc Molecules for the Epitaxial Growth of Highly Ordered Organic Crystals on Graphene

The epitaxial growth and preferred molecular orientation of copper phthalocyanine (CuPc) molecules on graphene has been systematically investigated and compared with growth on Si substrates, demonstrating the role of surface-mediated interactions in determining molecular orientation. X-ray scattering and diffraction, scanning tunneling microscopy, scanning electron microscopy, and first-principles theoretical calculations were used to show that the nucleation, orientation, and packing of CuPc molecules on films of graphene are fundamentally different compared to those grown on Si substrates. Interfacial dipole interactions induced by charge transfer between CuPc molecules and graphene are shown to epitaxially align the CuPc molecules in a face-on orientation in a series of ordered superstructures. At high temperatures, CuPc molecules lie flat with respect to the graphene substrate to form strip-like CuPc crystals with micrometer sizes containing monocrystalline grains. Such large epitaxial crystals may potentially enable improvement in the device performance of organic thin films, wherein charge transport, exciton diffusion, and dissociation are currently limited by grain size effects and molecular orientation.

Three-dimensional magnetic correlations in multiferroic LuFe2O4.

We present single crystal neutron diffraction measurements on multiferroic LuFe(2)O(4). Magnetic reflections are observed below transitions at 240 and 175 K indicating that the magnetic interactions in LuFe(2)O(4) are three-dimensional in character. The magnetic structure is refined as a ferrimagnetic spin configuration below the 240 K transition. Below 175 K a significant broadening of the magnetic peaks is observed along with the buildup of a diffuse component to the magnetic scattering.

Size effects in PbTiO3 nanocrystals : Effect of particle size on spontaneous polarization and strains

The spontaneous polarization (Ps) and spontaneous strains (xi) in mechanically unclamped and surface charge compensated PbTiO3 nanocrystals were determined as a function of particle size in the range <150nm by differential scanning calorimetry and x-ray powder diffraction, respectively. Significant deviations from bulk order parameters (P,xi) have been observed as the particle size decreased below ∼100nm. The critical size (rc) below which the ferroelectric tetragonal phase transforms to the paraelectric cubic phase was determined as ∼15nm. The depression in transition temperature with particle size is 14 °C at 28 nm. No change in the order of m3m→4mm ferrodistortive phase transition is observed. A simple analysis showed that ΔHtr∕(kBT)∼103 at 25 °C for r=16nm, indicating that the stabilization of the cubic phase at rc cannot be linked to an instability in dipolar ordering due to thermal agitations. Comparison of the spontaneous volumetric strains with the strain induced by surface stress indicated that t...

Comparison of residual stresses in Inconel 718 simple parts made by electron beam melting and direct laser metal sintering

Residual stress profiles were mapped using neutron diffraction in two simple prism builds of Inconel 718: one fabricated with electron beam melting (EBM) and the other with direct laser metal sintering. Spatially indexed stress-free cubes were obtained by electrical discharge machining (EDM) equivalent prisms of similar shape. The (311) interplanar spacings from the EDM sectioned sample were compared to the interplanar spacings calculated to fulfill stress and moment balance. We have shown that applying stress and moment balance is a necessary supplement to the measurements for the stress-free cubes with respect to accurate stress calculations in additively manufactured components. In addition, our work has shown that residual stresses in electron beam melted parts are much smaller than that of direct laser metal sintered parts most likely due to the powder preheating step in the EBM process.

Epitaxial growth of Cu on Si by magnetron sputtering

Epitaxial Cu films were grown on H-terminated Si(100), Si(110) and Si(111) substrates by magnetron sputtering. The epitaxial orientation relationships and microstructural characteristics of the Cu films were studied by x-ray diffraction (XRD) including the conventional θ-2θ mode, rocking curve and pole figures, as well as by transmission electron microscopy. The results of both pole figure and electron diffraction reveal the epitaxial orientation relationship of the Cu/Si epitaxial system is as follows: Cu(100)/Si(100) with Cu[010]//Si[011]; Cu(111)//Si(110) with Cu[110]//Si[001] and Cu[110]//Si[001] which are twin related; and for the Cu/Si(111) system the Cu film grows primarily in the epitaxial relationship of Cu(111)/Si(111) with Cu[110]//Si[211]. It is shown by XRD that Si(110) is a more favorable substrate than Si(111) for the epitaxial growth of Cu(111). An ultrathin Cu(111) film (up to 2.5 nm) with high epitaxial quality can be grown on Si(110). The epitaxial relationships of the Cu/Si are dis...

Homogeneous (co)precipitation of inorganic salts for synthesis of monodispersed barium titanate particles

Various processes of coprecipitation or crystallization of inorganicsalts of barium and titanium from homogeneous solutions were studiedin this work. In particular, barium hydroxide and barium chloridesalt as well as titanium tetrachloride were used as the startingmaterials for dielectric-tuning homogeneous precipitation in mixedsolvents of isopropanol and water. Hydroxypropylcellulose was used asa steric dispersant. Evaluations of size, shape, and composition ofsynthesized particles were made using scanning electron microscopy,high-temperature X-ray diffractometry, and differential thermalanalysis. Results show that salt concentration, pH, and reaction timeare important in determining the morphology and composition of thefinal powder. The titania particles from dielectric-tuningprecipitation are perfect microspheres with narrow size distribution(near monodispersed), while the particles from barium salts areflake-like, irregular in shape and size. Instead of particlescontaining uniform compositions of barium and titanium compounds,dielectric-tuning coprecipitation yielded powders of two separatedphases, i.e., monodispersed titania microspheres (∼1 μm) coated onbarium chloride salt flakes. Titanium-rich barium titanate wasobtained after calcination of coprecipitated powders. However,preliminary results show that the titania particles obtained bydielectric-tuning precipitation can be hydrothermally converted toBaTiO3 particles that are fully crystallized after calcination above950°C.

Chemical solution deposition of lanthanum zirconate barrier layers applied to low-cost coated-conductor fabrication

Epitaxial lanthanum zirconate (LZO) buffer layers have been grown by sol-gelprocessing on Ni–W substrates. We report on the application of these oxide films asseed and barrier layers in coated conductor fabrication as potentially simpler, lowercost coated-conductor architecture. The LZO films, about 80–100-nm thick, werefound to have dense, crack-free surfaces with high surface crystallinity. Using 0.2- mYBCO deposited by pulsed laser deposition, a critical current density of 2 MA/cm

Dimensional changes and creep of silica core ceramics used in investment casting of superalloys

Dimensional changes and creep deformation of a silica/zircon (74%/24%, respectively) and a high silica (93% silica and 3% zircon) ceramic were characterized and compared. All specimens were tested with a thermal profile that consisted of a 300°C/h heating rate to 1475 or 1525°C, followed by a one-hour isothermal hold (where each specimen was compressively crept under a static stress of 2.07, 4.14, or 6.21 MPa). The specimens were cooled at a rate of 900°C/h under stress. Dimensional changes were interpreted from apparent thermal expansion behavior during heating as well as before-and-after dimensional measurements. The silica/zircon ceramic generally exhibited less total contraction than the high silica ceramic for a specific test condition even though it crept faster at all stresses and temperatures during the one-hour isothermal/isostress segment. This indicates that the total contraction for both was dominated by reinitiated sintering and subsequent cristobalite formation that occurred during the heating segment. Minimum creep rate during the one-hour isothermal/isostress segment was examined as a function of stress and temperature for both ceramics using a power-law creep model. Creep-rate stress exponents (n) and activation energies (Q) were equivalent (within 95% confidence) for both ceramics showing that their different contents of zircon (3 vs. 24%) did not affect them. Lastly, n ≈ 1.3–1.4 and Q ≈ 170 kJ/mol indicate that diffusion-assisted crystallization of cristobalite, combined with power-law sintering owing to the high concentration of porosity (28–30%) was likely the rate-limiting mechanism in the creep deformation for both ceramics.