E. Butter

A simple method for calculation of the composition of VPE grown GaxIn1−xAs layers as a function of growth parameters

Abstract Based on a critical analysis of published papers on the thermodynamics of the growth of GaxIn1−xAs epitaxial layers in the Ga-In-HCl-AsH3-H2 system a simple method is described that permits the calculation of the solid phase composition immediately from the growth parameters. Simple formulae are derived that contain explicitly the experimental input variablesP0GaCl,P0InCl,P0AsH3P0H2, and the deposition temperatureT. The influence of variations in these parameters on the mixed crystal composition has been investigated. The accuracy of the theoretical predictions depends mainly on the thermochemical data used in the calculations. The mixed crystal composition depends primarily on theP0GaCl/(P0GaCl + P0InCl) ratio and on the deposition temperatur e.

Liquid phase epitaxial deposition of GaP on GaAs

Abstract The possibility of liquid phase epitaxial deposition of GaP and Ga(AsP) onto GaAs substrates has been studied using Ga, Ge, Sn, Pb and Bi as solvents. It has been found that epitaxial GaP and Ga(AsP) layers can be obtained on GaAs substrates employing Ge and Sn as solvent, whereas deposition from the other metals fails. The different results are discussed in terms of the related phase diagrams.

Movpe Growth and Properties of Gap Using Nitrogen Bridged Adduct

Amongst the new precursors for the III component in MOVPE there are numerous nitrogen containing compounds. Using those compounds, besides the electrical and optical quality of the grown material, the question of incorporation of nitrogen arises. We present the results of GaP growth with the TMGa-TMN adduct. Photoluminscence at 2 K clearly detects nitrogen as a substitutional dopant. Considering the luminescence features the nitrogen concentration was estimated to be about 10(16)-10(17) cm-3. The residual carrier concentration of the layers is in the range of 10(15) cm-3. No oxygen-related emission was observed. A discussion of the growth and the properties of the material is given.