E.C. Vail

Widely and continuously tunable micromachined resonant cavity detector with wavelength tracking

We demonstrate a resonant cavity wavelength tunable detector with a record 30-nm continuous tuning range, 17-dB extinction ratio, and a low 7-V tuning voltage. The detector map be biased to operate in one of two modes. In the first, the detector is tuned to a specific wavelength. In the second, the detector can be tuned to a nominal wavelength and remain locked to the wavelength of the incident light despite wavelength variations. Consequently, this detector is ideal for operation as a cost-effective and robust receiver for WDM communication systems, spectroscopic applications, and wavelength measurement.

High performance and novel effects of micromechanical tunable vertical-cavity lasers

Widely continuously tunable sources are key elements for many applications. This paper discusses the first integrated laser able to continuously tune its wavelength more than 1%: the micromechanical tunable vertical-cavity surface-emitting laser (VCSEL). These devices have demonstrated up 19.1 nm of continuous tuning, threshold currents as low as 460 /spl mu/A, and powers as high as 0.9 mW. In addition to these results, this paper discusses the tuning speed, lifetime, and applicability as a new broad-band source of these devices. Despite mechanical tuning, speeds of /spl mu/s are possible and long lifetime is expected. A detailed consideration of the design and fabrication of these devices is performed. Finally, an interesting mode switching effect is presented.

Temperature dependence of light-current characteristics of 0.98-/spl mu/m Al-free strained-quantum-well lasers

The decrease of the differential efficiency of 0.98-/spl mu/m semiconductor lasers with temperature can make high power, high temperature applications difficult. We present an experimental and theoretical study of the temperature dependence of the internal quantum efficiency, internal loss and differential gain of 0.98-/spl mu/m InGaAs/InGaAsP/InGaP strained quantum well lasers. In contrast to some earlier results, our measurements show the dominance of internal loss, attributed to free carrier absorption, in determining the temperature dependence of the differential efficiency, and show that leakage current is negligible below 120/spl deg/C.<<ETX>>

Temperature dependent efficiency and modulation characteristics of Al-free 980-nm laser diodes

Temperature dependent efficiency and modulation characteristics of strained quantum-well (QW) InGaAs-InGaAsP-InGaP 980-nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The decrease of the differential efficiency of 980-nm laser diodes with temperature is found to be caused by an increased modal loss attributed to the free carrier (electron and hole) absorption. The obtained results agree well with experimentally observed increase of internal loss at higher temperatures. Modulation characteristics are determined mainly by drift-diffusion in separate confinement region along with processes of carrier capture and escape in QWs. At high temperatures modulation bandwidth is reduced because of the decrease in differential gain. Graded index separate confinement heterostructure and multi-QW lasers show superior efficiency and modulation behavior at high temperatures. >

Temperature-dependent behavior of 980-nm strained quantum well lasers

Temperature dependent efficiency and modulation characteristics of strained quantum well (QW) InGaAs/InGaAsP/InGaP 980 nm laser diodes of various designs are analyzed using self consistent carrier transport analysis including stimulated emission. The decrease of the differential efficiency of 980 nm laser diodes with temperature is found to be caused by an increased modal loss attributed to the free carrier (electron and hole) absorption. The obtained results agree well with experimentally observed increase of internal loss at higher temperatures. Modulation characteristics are determined mainly by drift-diffusion in separate confinement region along with processes of carrier capture and escape in QWs. At high temperatures modulation bandwidth is reduced because of the decrease in differential gain. Graded index separate confinement heterostructure and multi-QW lasers show superior efficiency and modulation behavior at high temperatures.

Temperature dependent efficiency and modulation characteristics of Al-free 980 nm laser diodes

Summary form only given. Temperature dependent efficiency and modulation characteristics of QW laser diodes of various design are analyzed using self-consistent carrier transport analysis including stimulated emission.