W. Yuen
Stanford University
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Publication
Featured researches published by W. Yuen.
IEEE Photonics Technology Letters | 1998
Y.M. Li; W. Yuen; G.S. Li; C.J. Chang-Hasnain
We report a top-emitting micromechanical vertical-cavity surface-emitting laser (VCSEL) with a continuously tunable wavelength range of 31.6 nm, the widest tuning range demonstrated by a VCSEL to date. Good laser characteristics are maintained throughout the tuning range centered at 935 nm: continuous-wave (CW) threshold occurs between 1.24.5 mA while output power at 10-mA DC bias remains between 0.5 and 1.6 mW. By analyzing the pulsed differential quantum efficiency as a function of emission wavelength, we conclude that tilt loss from the cantilever design does not significantly affect the tuning range or laser performance.
IEEE Photonics Technology Letters | 1996
M.S. Wu; E.C. Vail; G.S. Li; W. Yuen; C.J. Chang-Hasnain
We demonstrate a resonant cavity wavelength tunable detector with a record 30-nm continuous tuning range, 17-dB extinction ratio, and a low 7-V tuning voltage. The detector map be biased to operate in one of two modes. In the first, the detector is tuned to a specific wavelength. In the second, the detector can be tuned to a nominal wavelength and remain locked to the wavelength of the incident light despite wavelength variations. Consequently, this detector is ideal for operation as a cost-effective and robust receiver for WDM communication systems, spectroscopic applications, and wavelength measurement.
lasers and electro optics society meeting | 2001
W. Yuen; Gabriel S. Li; R.F. Nabiev; Michael Jansen; D. Davis; C.J. Chang-Hasnain
We report the first electrically pumped tunable VCSELs with continuous tuning in 1530-1620 nm wavelength regime. The VCSELs are directly modulated at 2.5 Gbps (OC-48) rates and show error-free transmissions. Wavelength locking to ITU-grids are accomplished in 200 /spl mu/s.
IEEE Photonics Technology Letters | 1995
G.S. Li; W. Yuen; K. Toh; L.E. Eng; S.F. Lim; C.J. Chang-Hasnain
Accurate and reproducible molecular beam epitaxial (MBE) growths of vertical-cavity surface-emitting lasers (VCSELs) and various vertical-cavity structures are achieved using an extremely simple, cost-effective and compact diode laser reflectometry pre-growth calibration system. Average growth accuracy of 0.25% with a 0.40% standard deviation is obtained over a period of 6 months for a variety of growth structures. Low threshold continuous wave room temperature operation is achieved from all the VCSEL wafers.<<ETX>>
Optics & Photonics News | 2002
P. Kner; D. Sun; J. Boucart; P. Floyd; R.F. Nabiev; D. Davis; W. Yuen; M. Jansen; C.J. Chang-Hasnain
Vertical-cavity surface-emitting la- sers (VCSELs) have come a long way in the past decade, evolving from a laboratory curiosity to a key component in fiber-optic communications in local area networks (LANs). Rapid advances are reported in 1.5-1.6-µm wavelength VCSELs with tunability and long-reach single-mode fiber transmission. With proven cost benefits in LAN applications, VCSELs are poised to meet the rising market demands of metropolitan area applications.
optical fiber communication conference | 1998
Janice A. Hudgings; Sui F. Lim; G.S. Li; W. Yuen; K.Y. Lau; C.J. Chang-Hasnain
Summary form only given. Self-pulsating lasers are extremely useful in a variety of applications, including multimode fiber systems and optical disk readout. It is desirable to attain self-pulsating vertical-cavity surface-emitting lasers (VCSELs) because the surface-normal geometry facilitates two-dimensional array configurations and wafer-scale fabrication. We previously demonstrated on-off control of GHz-range self-pulsations in a VCSEL. In this work, we believe we demonstrate for the first time 700 MHz frequency tuning of self-pulsations in a VCSEL by using an active quantum well absorber integrated in the mirror stack. These pulsations have a 700 kHz relative frequency linewidth. We present theoretical and experimental demonstrations of a novel design criterion, whereby the absorber wavelength is slightly shorter than the lasing wavelength, leading to the negative differential resistance, which is essential to obtaining self-pulsation. By careful device design, the VCSEL can be made to self-pulsate at low absorber biases, GHz-range frequencies, and potentially at high output powers.
lasers and electro optics society meeting | 1997
Sui F. Lim; Janice A. Hudgings; G.S. Li; W. Yuen; Kam Y. Lau; C.J. Chang-Hasnain
We experimentally demonstrate the first self-pulsating VCSEL with a controllable quantum-well saturable absorber. Self-pulsation frequencies as high as 2 GHz were obtained. Self-pulsating lasers have proven extremely useful in applications where elimination of optical feedback and high-speed driving circuitry is needed. In this work, we present the first demonstrated InGaAs DBR QW VCSEL with self-pulsations occurring through a voltage-controlled saturable absorber.
lasers and electro optics society meeting | 1996
G. Giaretta; M.Y. Li; G.S. Li; W. Yuen; C.J. Chang-Hasnain
Summary form only given. We report the first single mode independently addressable oxide confined GaAs-AlGaAs QW DBR VCSEL laser array. The 4/spl times/8 VCSEL array has very uniform electrical, modal and geometrical characteristics that make it ideal for 2D array applications.
lasers and electro-optics society meeting | 1997
M.Y. Li; W. Yuen; G.S. Li; C.J. Chang-Hasnain
We report a top-emitting, micromechanical VCSEL with 30.8 nm of tuning, the widest continuous tuning range demonstrated by a VCSEL to date. Over the entire tuning range, I/sub th/ remains 1.2 mA-3.4 mA and P/sub out/ in the mW range.
lasers and electro optics society meeting | 1997
M.Y. Li; W. Yuen; G.S. Li; C.J. Chang-Hasnain
In conclusion, we report the first high performance, micromechanical tunable top-emitting AlGaAs DBR VCSEL laser that continuously tunes over 20 nm, has threshold current between 0.76 mA-1.9 mA and output power 0.92 mW-1.9 mW throughout the entire tuning range. Such a top-emitting tunable structure is highly desirable for easy optical and electrical packaging and for integration with other devices. The achieved high performance of low threshold and high power renders its practical implementation extremely feasible.