Eberhard Krimmel

Method of fast change of dopants for ion implantation.

Abstract A method to reduce the time to change dopants in ion implantation systems is described. The source is fed by a suitable mixture of dopant compounds and the desired dopant is selected by mass separation. The down time thus reduces to less than one minute. The main ion optical parameters of the system remain unchanged.

Fabrication of green‐emitting monolithic GaP light‐emitting diode displays by laser‐induced ablation and ion implantation

A novel and simple method for the fabrication of green‐emitting monolithic GaP:N displays comprises pulsed ruby laser irradiation‐induced, self‐aligned ablation combined with self‐aligned ion implantation. The different fabrication steps are described. With this technology, displays with reduced optical crosstalk and hence very high contrast in the range of 1:100 are obtained.