Hartmut Dr Boroffka

The determination of low dose boron implanted concentration profiles in silicon by the (n,α) reaction☆

Abstract The concentration profiles of 10 B in silicon were determined using a neutron guide ( φ th = 1.04 × 10 9 n / cm 2 s ) of the high flux reactor at Grenoble (Institut Laue-Langevin, ILL). The method is based on the measurement of the energy loss of the monoenergetic alpha particle (1471 keV) arising from the reaction 10 B(n,α) 7 Li. In contrast to former determinations, concentrations as low as 10 12 boron atoms/cm 2 (ppm level) were measured. 10 B profiles implanted with energies between 15 and 300 keV were determined with a depth resolution of ±25 nm.

Method of fast change of dopants for ion implantation.

Abstract A method to reduce the time to change dopants in ion implantation systems is described. The source is fed by a suitable mixture of dopant compounds and the desired dopant is selected by mass separation. The down time thus reduces to less than one minute. The main ion optical parameters of the system remain unchanged.