Edward A. Jones

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Characterization of an enhancement-mode 650-V GaN HFET

GaN heterojunction field-effect transistors (HFETs) in the 600-V class are relatively new in commercial power electronics. The GaN Systems GS66508 is the first commercially available 650-V enhancement-mode device. Static and dynamic testing has been performed across the full current, voltage, and temperature range to enable GaN-based converter design using this new device. A curve tracer was used to measure Rds-on across the full operating temperature range, as well as the self-commutated reverse conduction (i.e. diode-like) behavior. Other static parameters such as transconductance and gate current were also measured. A double pulse test setup was constructed and used to measure switching loss and time at the fastest achievable switching speed, and the subsequent over-voltages due to the fast switching were characterized. Based on these results and analysis, an accurate loss model has been developed for the GS66508 to allow for GaN-based converter design and comparison with other commercially available devices in the 600-V class.

Design and Implementation of a GaN-Based, 100-kHz, 102-W/in 3 Single-Phase Inverter

High power density is a desirable feature of power electronics design, which prompts economic incentives for industrial applications. In this paper, a gallium nitride (GaN)-based 2-kVA single-phase inverter design was developed for the Google Little Box Challenge, which achieves a 102-W/in

Capacitor-Clamped, Three-level GaN-Based DC–DC Converter With Dual Voltage Outputs for Battery Charger Applications

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The Impact of Voltage-Balancing Control on Switching Frequency of the Modular Multilevel Converter

power density. First, the static and dynamic temperature-dependent characteristics of multiple SiC and enhancement-mode GaN FETs are investigated and compared. Based on the device testing results, several topologies of the inverter stage and different power decoupling solutions are compared with respect to the device volume, efficiency, and thermal requirements. Moreover, some design approaches for magnetic devices and the implementation of gate drives for GaN devices are discussed in this paper, which enable a compact and robust system. Finally, a dc notch filter and a hard switching full-bridge converter are combined as the proposed design for the prototype. A 2-kVA prototype is demonstrated, which meets the volume, efficiency, and thermal requirements. The performance of the prototype is verified by the experimental results.

Methodology for Wide Band-Gap Device Dynamic Characterization

Gallium nitride (GaN) heterojunction field-effect transistors are an enabling technology for high-density converter design. This paper proposes a three-level dc-dc converter with dual outputs based on enhancement-mode GaN devices, intended for use as a battery charger in aircraft applications. The charger can output either 28 or 270 V, selected with a jumper, to satisfy the two most common dc bus voltage requirements in airplanes. It operates as an LLC converter in the 28 V mode and as a buck converter in the 270 V mode. In both operation modes, the devices can realize zero voltage switching (ZVS). With the chosen modulation method, the converter can realize automatic voltage balancing of the flying capacitor and the frequency doubling function to act as an interleaved converter. For the LLC mode, the resonant frequency is twice the switching frequency of primary-side switches, and for the buck mode, the frequency of the output inductor current is also twice the switching frequency. This helps to reduce the size of magnetics while maintaining a low switching loss. Also, the converter utilizes a matrix transformer, with resonant parameters designed to reduce conduction loss and avoid ZVS failure. The operating principle of the converter is analyzed and then experimentally verified on a 1.5-kW prototype with 1 MHz resonant frequency.

Temperature-dependent turn-on loss analysis for GaN HFETs

Voltage-balancing control in a modular multilevel converter (MMC) impacts not only the voltage difference among submodule capacitors, but also the power device switching patterns. As a result, MMC possesses a nondeterministic switching pattern and its switching frequency is no longer an independent parameter. This paper theoretically investigates how voltage-balancing control influences the switching frequency in the MMC. Equations describing the relationship between the submodule capacitor unbalanced voltage and converter switching frequency are derived. Since unbalanced voltage also impacts the submodule capacitor ripple voltage and voltage/current harmonics, the design interaction between switching frequency and submodule capacitance, as well as the selection of unbalanced voltage are further investigated. Both simulation and experimental verifications are provided.

Switching-frequency ripple on DC link voltage in a modular multilevel converter with circulating current suppressing control

The double pulse test (DPT) is a widely accepted method to evaluate the dynamic behavior of power devices. Considering the high switching-speed capability of wide band-gap devices, the test results are very sensitive to the alignment of voltage and current (V–I) measurements. Also, because of the shoot-through current induced by Cdv/dt (i.e., cross-talk), the switching losses of the nonoperating switch device in a phase-leg must be considered in addition to the operating device. This paper summarizes the key issues of the DPT, including components and layout design, measurement considerations, grounding effects, and data processing. Additionally, a practical method is proposed for phase-leg switching loss evaluation by calculating the difference between the input energy supplied by a dc capacitor and the output energy stored in a load inductor. Based on a phase-leg power module built with 1200-V/50-A SiC MOSFETs, the test results show that this method can accurately evaluate the switching loss of both the upper and lower switches by detecting only one switching current and voltage, and it is immune to V–I timing misalignment errors.

Circulating Current Suppressing Control’s Impact on Arm Inductance Selection for Modular Multilevel Converter

Enhancement-mode GaN HFETs enable efficient high-frequency converter design, but this technology is relatively new and exhibits different characteristics from Si or SiC MOSFETs. GaN performance at elevated temperature is especially unique. Turn-on time increases significantly with temperature, and turn-on losses increase as a result. This phenomenon can be explained based on the relationships between junction temperature and GaN device transconductance, and between transconductance and turn-on time. An analytical relationship between temperature and turn-on loss has been derived for the 650-V GS66508 from GaN Systems, and verified with experimental results. Based on this relationship, a detailed model is developed, and a simplified scaling factor is proposed for estimating turn-on loss in e-mode GaN HFETs, using room-temperature switching characterization and typically published datasheet parameters.

Analysis of the relationship between switching frequency and sub-module capacitor unbalanced voltage for a modular multilevel converter

This paper investigates the dc link voltage ripple in a modular multilevel converter (MMC). It is found that switching-frequency ripple occurs on the dc link voltage in MMC when circulating current suppressing control is implemented. The mechanism of the switching-frequency voltage ripple is investigated and explained. Circulating current suppressing control will manipulate the average values for the three phaseleg voltages to be equal in order to reduce the low frequency circulating current. However, switching-frequency harmonics appear on the phase-leg voltages as a result, introducing the switching-ripple voltage on the dc link. By modeling the dc link voltage, switching-ripple voltage is derived. Experimental results of a three-phase MMC are presented to verify the theoretical analysis.