Fei Fred Wang

Common-Mode Circulating Current Control of Paralleled Interleaved Three-Phase Two-Level Voltage-Source Converters With Discontinuous Space-Vector Modulation

This paper presents a control method to limit the common-mode (CM) circulating current between paralleled three-phase two-level voltage-source converters (VSCs) with discontinuous space-vector pulsewidth modulation (DPWM) and interleaved switching cycles. This CM circulating current can be separated into two separate components based on their frequency; the high-frequency component, close to the switching frequency, can be effectively limited by means of passive components; the low-frequency component, close to the fundamental frequency, embodies the jumping CM circulating current observed in parallel VSCs. This is the main reason why it is usually recommended not to implement discontinuous and interleaving PWM together. The origin of this low-frequency circulating current is analyzed in detail, and based on this, a method to eliminate its presence is proposed by impeding the simultaneous use of different zero vectors between the converters. This control method only requires six additional switching actions per line cycle, presenting a minimum impact on the converter thermal design. The analysis and the feasibility of the control method are verified by simulation and experimental results.

Review of Commercial GaN Power Devices and GaN-Based Converter Design Challenges

Gallium nitride (GaN) power devices are an emerging technology that have only recently become available commercially. This new technology enables the design of converters at higher frequencies and efficiencies than those achievable with conventional Si devices. This paper reviews the characteristics and commercial status of both vertical and lateral GaN power devices, providing the background necessary to understand the significance of these recent developments. In addition, the challenges encountered in GaN-based converter design are considered, such as the consequences of faster switching on gate driver design and board layout. Other issues include the unique reverse conduction behavior, dynamic Rds,on, breakdown mechanisms, thermal design, device availability, and reliability qualification. This review will help prepare the reader to effectively design GaN-based converters, as these devices become increasingly available on a commercial scale.

Reliability-oriented design considerations for high-power converter modules

In this paper, proper and detailed reliability models for the power converter are addressed to assess the reliability of the system, taking into account the effects of stresses and environment on the reliability of the components. Based on that, a system design strategy is proposed in two different ways, either through a system or components point of view. The former implies the minimization of the number of components, thus simplifying the converter structure, and the minimization of stress on the different devices and components. The latter pursues the employment of the best possible technology per available component. Finally, a reliability-oriented design for a three phase AC to DC, bidirectional power converter module is presented.

A High Temperature Silicon Carbide mosfet Power Module With Integrated Silicon-On-Insulator-Based Gate Drive

This paper presents a board-level integrated silicon carbide (SiC) MOSFET power module for high temperature and high power density applications. Specifically, a silicon-on-insulator (SOI) based gate driver capable of operating at 200°C ambient temperature is designed and fabricated. The sourcing and sinking current capability of the gate driver are tested under various ambient temperatures. Also, a 1200 V/100 A SiC MOSFET phase-leg power module is developed utilizing high temperature packaging technologies. The static characteristics, switching performance, and short-circuit behavior of the fabricated power module are fully evaluated at different temperatures. Moreover, a buck converter prototype composed of the SOI gate driver and SiC power module is built for high temperature continuous operation. The converter is operated at different switching frequencies up to 100 kHz, with its junction temperature monitored by a thermo-sensitive electrical parameter (TSEP) and compared with thermal simulation results. The experimental results from the continuous operation demonstrate the high temperature capability of the power module at a junction temperature greater than 225°C.

Development of Si IGBT Phase-Leg Modules for Operation at 200 °C in Hybrid Electric Vehicle Applications

A Si insulated-gate bipolar transistor (IGBT) phase-leg module is developed for operating at 200°C in hybrid electric vehicle applications utilizing the high temperature packaging technologies and appropriate thermal management. The static and switching electrical characteristics of the fabricated power module are tested at various temperatures, showing that the module can operate reliably with increased but acceptable losses at 200°C. The criterion on thermal performance is given to prevent thermal runaway caused by fast increase of the leakage current during a high temperature operation. Afterward, the thermal management system is designed to meet the criterion, the performance of which is evaluated with experiment. Furthermore, two temperature-sensitive electrical parameters, on-state voltage drop and the switching time, are employed for thermal impedance characterization and the junction temperature measurement during converter operation, respectively. Finally, a 10-kW buck converter prototype composed of the module assembly is built and operated at the junction temperature up to 200°C. The experimental results demonstrate the feasibility of operating Si device-based converters continuously at 200°C.

Three-Phase Power Converter-Based Real-Time Synchronous Generator Emulation

This paper develops a synchronous generator emulator by using a three-phase voltage source converter for transmission level power system testing. Different interface algorithms are compared, and the voltage type ideal transformer model is selected considering accuracy and stability. At the same time, closed-loop voltage control with current feed-forward is proposed to decrease the emulation error. The emulation is then verified through two different ways. First, the output waveforms of the emulator in experiments are compared with the simulation under the same condition. Second, a transfer function perturbation-based error model is obtained and redefined as the relative error for the amplitude and phase between the emulated and the target system over the frequency range of interest. The major cause of the error is investigated through a quantitative analysis of the error with varying parameters.

Static and Dynamic Power System Load Emulation in a Converter-Based Reconfigurable Power Grid Emulator

A hardware testbed platform emulating multiple-area power system scenario dynamics has been established aiming at multiple time-scale real-time emulations. In order to mimic real power flow situations in the utility system, the load emulators have to behave like real ones in both their static and dynamic characteristics. A constant-impedance, constant-current, and constant-power (ZIP) model has been used for static load types, while a three-phase induction motor model has been built to represent dynamic load types. In this paper, ways of modeling ZIP and induction motor loads and the performance of each load emulator are discussed. Comparisons between simulation and experimental results are shown as well for the validation of the emulator behaviors. A real-time composite power load emulator is then demonstrated with desired characteristics and detailed transients for representing a power system PQ bus dynamics.

Design and Implementation of a GaN-Based, 100-kHz, 102-W/in 3 Single-Phase Inverter

High power density is a desirable feature of power electronics design, which prompts economic incentives for industrial applications. In this paper, a gallium nitride (GaN)-based 2-kVA single-phase inverter design was developed for the Google Little Box Challenge, which achieves a 102-W/in

Capacitor-Clamped, Three-level GaN-Based DC–DC Converter With Dual Voltage Outputs for Battery Charger Applications

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The Impact of Voltage-Balancing Control on Switching Frequency of the Modular Multilevel Converter

power density. First, the static and dynamic temperature-dependent characteristics of multiple SiC and enhancement-mode GaN FETs are investigated and compared. Based on the device testing results, several topologies of the inverter stage and different power decoupling solutions are compared with respect to the device volume, efficiency, and thermal requirements. Moreover, some design approaches for magnetic devices and the implementation of gate drives for GaN devices are discussed in this paper, which enable a compact and robust system. Finally, a dc notch filter and a hard switching full-bridge converter are combined as the proposed design for the prototype. A 2-kVA prototype is demonstrated, which meets the volume, efficiency, and thermal requirements. The performance of the prototype is verified by the experimental results.