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Dive into the research topics where Edward F. Runnion is active.

Publication


Featured researches published by Edward F. Runnion.


Archive | 2004

Pocket implant for complementary bit disturb improvement and charging improvement of sonos memory cell

Emmanuil H. Lingunis; Nga-Ching Wong; Sameer Haddad; Mark Randolph; Mark T. Ramsbey; Ashot Melik-Martirosian; Edward F. Runnion; Yi He


Archive | 2006

RAMP GATE ERASE FOR DUAL BIT FLASH MEMORY

Sheung-Hee Park; Gwyn Robert Jones; Wing Leung; Edward F. Runnion; Ming-Sang Kwan; Xuguang Wang; Yi He


Archive | 2007

Cycling improvement using higher erase bias

Sheung-Hee Park; Xuguang Wang; Wing Leung; Ming-Sang Kwan; Yi He; Edward F. Runnion


Archive | 2002

Pre-charge method for reading a non-volatile memory cell

Yi He; Edward F. Runnion; Zhizheng Liu; Mark Randolph; Darlene Hamilton; Pau-Ling Chen; Binh Quang Le


Archive | 2007

ALGORITHM FOR CHARGE LOSS REDUCTION AND Vt DISTRIBUTION IMPROVEMENT

Gwyn Robert Jones; Edward F. Runnion; Zhizheng Liu; Mark Randolph


Archive | 2002

Method and system for erasing a nitride memory device

Mark Randolph; Chi Chang; Yi He; Wei Zheng; Edward F. Runnion; Zhizheng Liu


Archive | 2008

APPLYING NEGATIVE GATE VOLTAGE TO WORDLINES ADJACENT TO WORDLINE ASSOCIATED WITH READ OR VERIFY TO REDUCE ADJACENT WORDLINE DISTURB

Yuji Mizuguchi; Mark Randolph; Yi He; Zhizheng Liu; Yanxia (Emma) Lin; Xianmin Yi; Gulzar Kathawala; Amol Joshi; Kuo-Tung Chang; Edward F. Runnion; Sung-Chul Lee; Sung-Yong Chung; Yanxiang Liu; Yu Sun


Archive | 2003

Method to obtain temperature independent program threshold voltage distribution using temperature dependent voltage reference

Edward F. Runnion; Tien-Chun Yang; Binh Quang Le; Shigekazu Yamada; Darlene Hamilton; Ming-Huei Shieh; Pau-Ling Chen; Kazuhiro Kurihara


Archive | 2005

Methods and systems for reducing the threshold voltage distribution following a memory cell erase

Yi He; Gwyn Robert Jones; Edward F. Runnion; Mark Randolph


Archive | 2003

Improved pre-charge method for reading a non-volatile memory cell

Yi He; Zhizheng Liu; Mark Randolph; Edward F. Runnion; Darlene Hamilton; Patu-Ling Chen; Binh Quang Le

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