Edwin Hang Tong Teo

A systematic study of the atmospheric pressure growth of large-area hexagonal crystalline boron nitride film

The growth of hexagonal boron nitride (h-BN) is of much interest owing to its outstanding properties and for scalable two dimensional (2D) electronics applications. Here, we report the controllable growth of h-BN on a copper substrate using the atmospheric pressure chemical vapor deposition (APCVD) method using ammonia borane as the precursor. The advantages of using APCVD include its ease of setup utilizing fewer resources, low cost and fast growth, all of which are essential for full film coverage and the mass production of 2D h-BN. In this study, we observed a substrate-position dependent evolution of h-BN domains at various stages of growth as the density and size of the domains increased downstream along the quartz tube. Other critical parameters such as growth temperature, deposition time, temperature and mass of precursor were also systemically investigated in order to understand the factors influencing the growth of the h-BN film. Importantly, with a slight increase in the growth temperature of 50 °C, we observe a significant (∼17-fold) increase in the average domain size, and its further expansion for a longer duration of growth. Likewise, our parametric study highlights the impact of other crucial parameters on domain size, coverage, and thickness of the h-BN film.

Band gap effects of hexagonal boron nitride using oxygen plasma

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.

Biocompatible Hydroxylated Boron Nitride Nanosheets/Poly(vinyl alcohol) Interpenetrating Hydrogels with Enhanced Mechanical and Thermal Responses

Poly(vinyl alcohol) (PVA) hydrogels with tissue-like viscoelasticity, excellent biocompatibility, and high hydrophilicity have been considered as promising cartilage replacement materials. However, lack of sufficient mechanical properties is a critical barrier to their use as load-bearing cartilage substitutes. Herein, we report hydroxylated boron nitride nanosheets (OH-BNNS)/PVA interpenetrating hydrogels by cyclically freezing/thawing the aqueous mixture of PVA and highly hydrophilic OH-BNNS (up to 0.6 mg/mL, two times the highest reported so far). Encouragingly, the resulting OH-BNNS/PVA hydrogels exhibit controllable reinforcements in both mechanical and thermal responses by simply varying the OH-BNNS contents. Impressive 45, 43, and 63% increases in compressive, tensile strengths and Youngs modulus, respectively, can be obtained even with only 0.12 wt% (OH-BNNS:PVA) OH-BNNS addition. Meanwhile, exciting improvements in the thermal diffusivity (15%) and conductivity (5%) can also be successfully achieved. These enhancements are attributed to the synergistic effect of intrinsic superior properties of the as-prepared OH-BNNS and strong hydrogen bonding interactions between the OH-BNNS and PVA chains. In addition, excellent cytocompatibility of the composite hydrogels was verified by cell proliferation and live/dead viability assays. These biocompatible OH-BNNS/PVA hydrogels are promising in addressing the mechanical failure and locally overheating issues as cartilage substitutes and may also have broad utility for biomedical applications, such as drug delivery, tissue engineering, biosensors, and actuators.

Low-Temperature in Situ Growth of Graphene on Metallic Substrates and Its Application in Anticorrosion

Metal or alloy corrosion brings about huge economic cost annually, which is becoming one area of growing concern in various industries, being in bulk state or nanoscale range. Here, single layer or few layers of graphene are deposited on various metallic substrates directly at a low temperature down to 400 °C. These substrates can be varied from hundreds-micrometer bulk metallic or alloy foils to tens of nanometer nanofibers (NFs). Corrosion analysis reveals that both graphene-grown steel sheets and NFs have reduced the corrosion rate of up to ten times lower than that of their bare corresponding counterparts. Moreover, such low-temperature in situ growth of graphene demonstrates stable and long-lasting anticorrosion after long-term immersion. This new class of graphene coated nanomaterials shows high potentials in anticorrosion applications for submarines, oil tankers/pipelines, and ruggedized electronics.

High-Density 3D-Boron Nitride and 3D-Graphene for High-Performance Nano–Thermal Interface Material

Compression studies on three-dimensional foam-like graphene and h-BN (3D-C and 3D-BN) revealed their high cross-plane thermal conductivity (62-86 W m-1 K-1) and excellent surface conformity, characteristics essential for thermal management needs. Comparative studies to state-of-the-art materials and other materials currently under research for heat dissipation revealed 3D-foams improved performance (20-30% improved cooling, temperature decrease by ΔT of 44-24 °C).

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO2/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25...

3D Graphene-Infused Polyimide with Enhanced Electrothermal Performance for Long-Term Flexible Space Applications.

Polyimides (PIs) have been praised for their high thermal stability, high modulus of elasticity and tensile strength, ease of fabrication, and moldability. They are currently the standard choice for both substrates for flexible electronics and space shielding, as they render high temperature and UV stability and toughness. However, their poor thermal conductivity and completely electrically insulating characteristics have caused other limitations, such as thermal management challenges for flexible high-power electronics and spacecraft electrostatic charging. In order to target these issues, a hybrid of PI with 3D-graphene (3D-C), 3D-C/PI, is developed here. This composite renders extraordinary enhancements of thermal conductivity (one order of magnitude) and electrical conductivity (10 orders of magnitude). It withstands and keeps a stable performance throughout various bending and thermal cycles, as well as the oxidative and aggressive environment of ground-based, simulated space environments. This makes this new hybrid film a suitable material for flexible space applications.

Re-ordering Chaotic Carbon: Origins and Application of Textured Carbon

Formation of nanocrystals with preferred orientation within the amorphous carbon matrix has attracted lots of theoretical and experimental attentions recently. Interesting properties of this films, easy fabrication methods and practical problems associated with the growth of other carbon nanomaterials such as carbon nanotubes (CNTs) and graphene gives this new class of carbon nanostructure a potential to be considered as a replacement for some applications such as thermal management at nanoscale and interconnects. In this short review paper, the fabrication techniques and associated formation mechanisms of these nanostructured films have been discussed. Besides, electrical and thermal properties of these nanostructured films have been compared with CNTs and graphene.

High-quality monolayer superconductor NbSe 2 grown by chemical vapour deposition

The discovery of monolayer superconductors bears consequences for both fundamental physics and device applications. Currently, the growth of superconducting monolayers can only occur under ultrahigh vacuum and on specific lattice-matched or dangling bond-free substrates, to minimize environment- and substrate-induced disorders/defects. Such severe growth requirements limit the exploration of novel two-dimensional superconductivity and related nanodevices. Here we demonstrate the experimental realization of superconductivity in a chemical vapour deposition grown monolayer material—NbSe2. Atomic-resolution scanning transmission electron microscope imaging reveals the atomic structure of the intrinsic point defects and grain boundaries in monolayer NbSe2, and confirms the low defect concentration in our high-quality film, which is the key to two-dimensional superconductivity. By using monolayer chemical vapour deposited graphene as a protective capping layer, thickness-dependent superconducting properties are observed in as-grown NbSe2 with a transition temperature increasing from 1.0 K in monolayer to 4.56 K in 10-layer.Two-dimensional superconductors will likely have applications not only in devices, but also in the study of fundamental physics. Here, Wang et al. demonstrate the CVD growth of superconducting NbSe2 on a variety of substrates, making these novel materials increasingly accessible.

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.