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Dive into the research topics where Roland Yingjie Tay is active.

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Featured researches published by Roland Yingjie Tay.


ACS Nano | 2015

High-Performance Microsupercapacitors Based on Two-Dimensional Graphene/Manganese Dioxide/Silver Nanowire Ternary Hybrid Film

Wenwen Liu; Congxiang Lu; Xingli Wang; Roland Yingjie Tay; Beng Kang Tay

Microsupercapacitors (MSCs), as one type of significant power source or energy storage unit in microelectronic devices, have attracted more and more attention. However, how to reasonably design electrode structures and exploit the active materials to endow the MSCs with excellent performances in a limited surface area still remains a challenge. Here, a reduced graphene oxide (RGO)/manganese dioxide (MnO2)/silver nanowire (AgNW) ternary hybrid film (RGMA ternary hybrid film) is successfully fabricated by a facile vacuum filtration and subsequent thermal reduction, and is used directly as a binder-free electrode for MSCs. Additionally, a flexible, transparent, all-solid state RMGA-MSC is also built, and its electrochemical performance in an ionic liquid gel electrolyte are investigated in depth. Notably, the RGMA-MSCs display superior electrochemical properties, including exceptionally high rate capability (up to 50000 mV·s(-1)), high frequency response (very short corresponding time constant τ0 = 0.14 ms), and excellent cycle stability (90.3% of the initial capacitance after 6000 cycles in ionic liquid gel electrolyte). Importantly, the electrochemical performance of RGMA-MSCs shows a strong dependence on the geometric parameters including the interspace between adjacent fingers and the width of the finger of MSCs. These encouraging results may not only provide important references for the design and fabrication of high-performance MSCs, but also make the RGMA ternary hybrid film promising for the next generation film lithium ion batteries and other energy storage devices.


Journal of Materials Chemistry | 2016

Paper-based all-solid-state flexible micro-supercapacitors with ultra-high rate and rapid frequency response capabilities

Wenwen Liu; Congxiang Lu; Hongling Li; Roland Yingjie Tay; Leimeng Sun; Xinghui Wang; Wai Leong Chow; Xingli Wang; Beng Kang Tay; Zhongwei Chen; Ji Yan; Kun Feng; Gregory Lui; Ricky Tjandra; Lathankan Rasenthiram; Gordon Chiu; Aiping Yu

Paper-based flexible supercapacitors (SCs) have attracted great attention as they enable the realization of next-generation bendable, light-weight, and environmentally-friendly portable electronics. However, conventional paper-based SCs adopt a sandwich-like structure suffering from poor rate performance, slow frequency response and difficulty in direct integration with other micro-devices. We report here for the first time paper-based all-solid-state flexible planar micro-supercapacitors (MSCs) using poly(3,4-ethylenedioxythiophene):poly(styrene sulfonate) (PEDOT:PSS)-CNT/Ag as the electrode material by the inkjet printing technique. The as-fabricated paper-based all-solid-state flexible MSCs deliver the best rate capability among all reported paper-based MSCs/SCs (up to 10 000 mV s−1), fast frequency response (relaxation time constant τ0 = 8.5 ms), high volumetric specific capacitance (23.6 F cm−3) and long cycle stability (92% capacitance retention after 10 000 cycles), which shows a strong dependence on the film thickness and the interdigitated spacing between neighbouring fingers, respectively. Furthermore, the series and parallel connections reveal that the as-prepared paper-based MSCs obey the basic theorem of series and parallel connections of capacitors, respectively. The combination of the simple fabrication technology and excellent performances presented here not only make paper-based all-solid-state flexible MSCs an attractive candidate for powering future flexible portable electronics, but also provide important references for the design and fabrication of other high-performance flexible energy storage devices.


Journal of Materials Chemistry C | 2014

A systematic study of the atmospheric pressure growth of large-area hexagonal crystalline boron nitride film

Roland Yingjie Tay; Xingli Wang; Siu Hon Tsang; G. C. Loh; Ram Sevak Singh; Hong Li; Govind Mallick; Edwin Hang Tong Teo

The growth of hexagonal boron nitride (h-BN) is of much interest owing to its outstanding properties and for scalable two dimensional (2D) electronics applications. Here, we report the controllable growth of h-BN on a copper substrate using the atmospheric pressure chemical vapor deposition (APCVD) method using ammonia borane as the precursor. The advantages of using APCVD include its ease of setup utilizing fewer resources, low cost and fast growth, all of which are essential for full film coverage and the mass production of 2D h-BN. In this study, we observed a substrate-position dependent evolution of h-BN domains at various stages of growth as the density and size of the domains increased downstream along the quartz tube. Other critical parameters such as growth temperature, deposition time, temperature and mass of precursor were also systemically investigated in order to understand the factors influencing the growth of the h-BN film. Importantly, with a slight increase in the growth temperature of 50 °C, we observe a significant (∼17-fold) increase in the average domain size, and its further expansion for a longer duration of growth. Likewise, our parametric study highlights the impact of other crucial parameters on domain size, coverage, and thickness of the h-BN film.


Applied Physics Letters | 2014

Band gap effects of hexagonal boron nitride using oxygen plasma

Ram Sevak Singh; Roland Yingjie Tay; Wai Leong Chow; Siu Hon Tsang; Govind Mallick; Edwin Hang Tong Teo

Tuning of band gap of hexagonal boron nitride (h-BN) has been a challenging problem due to its inherent chemical stability and inertness. In this work, we report the changes in band gaps in a few layers of chemical vapor deposition processed as-grown h-BN using a simple oxygen plasma treatment. Optical absorption spectra show a trend of band gap narrowing monotonically from 6 eV of pristine h-BN to 4.31 eV when exposed to oxygen plasma for 12 s. The narrowing of band gap causes the reduction in electrical resistance by ∼100 fold. The x-ray photoelectron spectroscopy results of plasma treated hexagonal boron nitride surface show the predominant doping of oxygen for the nitrogen vacancy. Energy sub-band formations inside the band gap of h-BN, due to the incorporation of oxygen dopants, cause a red shift in absorption edge corresponding to the band gap narrowing.


Small | 2014

Configurable Three-Dimensional Boron Nitride–Carbon Architecture and Its Tunable Electronic Behavior with Stable Thermal Performances

Manuela Loeblein; Roland Yingjie Tay; Siu Hon Tsang; Wei Beng Ng; Edwin Hang Tong Teo

Recent developments of 3D-graphene and 3D-boron-nitride have become of great interest owing to their potential for ultra-light flexible electronics. Here we demonstrate the first synthesis of novel 3D-BNC hybrids. By specifically controlling the compositions of C and BN, new fascinating properties are observed, such as highly tunable electrical conductivity, controllable EMI shielding properties, and stable thermal conductivity. This ultra-light hybrid opens up many new applications such as for electronic packaging and thermal interface materials (TIMs).


ACS Nano | 2017

Biocompatible Hydroxylated Boron Nitride Nanosheets/Poly(vinyl alcohol) Interpenetrating Hydrogels with Enhanced Mechanical and Thermal Responses

Lin Jing; Hongling Li; Roland Yingjie Tay; Bo Sun; Siu Hon Tsang; Olivier Cometto; Jinjun Lin; Edwin Hang Tong Teo; Alfred Iing Yoong Tok

Poly(vinyl alcohol) (PVA) hydrogels with tissue-like viscoelasticity, excellent biocompatibility, and high hydrophilicity have been considered as promising cartilage replacement materials. However, lack of sufficient mechanical properties is a critical barrier to their use as load-bearing cartilage substitutes. Herein, we report hydroxylated boron nitride nanosheets (OH-BNNS)/PVA interpenetrating hydrogels by cyclically freezing/thawing the aqueous mixture of PVA and highly hydrophilic OH-BNNS (up to 0.6 mg/mL, two times the highest reported so far). Encouragingly, the resulting OH-BNNS/PVA hydrogels exhibit controllable reinforcements in both mechanical and thermal responses by simply varying the OH-BNNS contents. Impressive 45, 43, and 63% increases in compressive, tensile strengths and Youngs modulus, respectively, can be obtained even with only 0.12 wt% (OH-BNNS:PVA) OH-BNNS addition. Meanwhile, exciting improvements in the thermal diffusivity (15%) and conductivity (5%) can also be successfully achieved. These enhancements are attributed to the synergistic effect of intrinsic superior properties of the as-prepared OH-BNNS and strong hydrogen bonding interactions between the OH-BNNS and PVA chains. In addition, excellent cytocompatibility of the composite hydrogels was verified by cell proliferation and live/dead viability assays. These biocompatible OH-BNNS/PVA hydrogels are promising in addressing the mechanical failure and locally overheating issues as cartilage substitutes and may also have broad utility for biomedical applications, such as drug delivery, tissue engineering, biosensors, and actuators.


Small | 2015

Controllable Synthesis of Highly Luminescent Boron Nitride Quantum Dots.

Hongling Li; Roland Yingjie Tay; Siu Hon Tsang; Xu Zhen; Edwin Hang Tong Teo

Boron nitride quantum dots (BNQDs), as a new member of heavy metal-free quantum dots, have aroused great interest in fundamental research and practical application due to their unique physical/chemical properties. However, it is still a challenge to controllably synthesize high-quality BNQDs with high quantum yield (QY), uniform size and strong fluorescent. In this work, BNQDs have been successfully fabricated by the liquid exfoliation and the subsequent solvothermal process with respect to its facileness and easy large scale up. Importantly, BNQDs with high-quality can be controllably obtained by adjusting the synthetic parameters involved in the solvothermal process including filling factor, synthesis temperature, and duration time. Encouragingly, the as-prepared BNQDs possess strong blue luminescence with QY as high as 19.5%, which can be attributed to the synergetic effect of size, surface chemistry and edge defects. In addition, this strategy presented here provides a new reference for the controllable synthesis of other heavy metal-free QDs. Furthermore, the as-prepared BNQDs are non-toxic to cells and exhibit nanosecond-scaled lifetimes, suggesting they have great potential biological and optoelectronic applications.


Applied Physics Letters | 2015

Direct growth of nanocrystalline hexagonal boron nitride films on dielectric substrates

Roland Yingjie Tay; Siu Hon Tsang; Manuela Loeblein; Wai Leong Chow; G. C. Loh; Joo Wah Toh; Soon Ang; Edwin Hang Tong Teo

Atomically thin hexagonal-boron nitride (h-BN) films are primarily synthesized through chemical vapor deposition (CVD) on various catalytic transition metal substrates. In this work, a single-step metal-catalyst-free approach to obtain few- to multi-layer nanocrystalline h-BN (NCBN) directly on amorphous SiO2/Si and quartz substrates is demonstrated. The as-grown thin films are continuous and smooth with no observable pinholes or wrinkles across the entire deposited substrate as inspected using optical and atomic force microscopy. The starting layers of NCBN orient itself parallel to the substrate, initiating the growth of the textured thin film. Formation of NCBN is due to the random and uncontrolled nucleation of h-BN on the dielectric substrate surface with no epitaxial relation, unlike on metal surfaces. The crystallite size is ∼25 nm as determined by Raman spectroscopy. Transmission electron microscopy shows that the NCBN formed sheets of multi-stacked layers with controllable thickness from ∼2 to 25...


ACS Nano | 2017

Direct Observation of Indium Conductive Filaments in Transparent, Flexible, and Transferable Resistive Switching Memory

Kai Qian; Roland Yingjie Tay; Meng-Fang Lin; Jingwei Chen; Huakai Li; Jinjun Lin; Jiangxin Wang; Guofa Cai; Viet Cuong Nguyen; Edwin Hang Tong Teo; Tupei Chen; Pooi See Lee

Electronics with multifunctionalities such as transparency, portability, and flexibility are anticipated for future circuitry development. Flexible memory is one of the indispensable elements in a hybrid electronic integrated circuit as the information storage device. Herein, we demonstrate a transparent, flexible, and transferable hexagonal boron nitride (hBN)-based resistive switching memory with indium tin oxide (ITO) and graphene electrodes on soft polydimethylsiloxane (PDMS) substrate. The ITO/hBN/graphene/PDMS memory device not only exhibits excellent performance in terms of optical transmittance (∼85% in the visible wavelength), ON/OFF ratio (∼480), retention time (∼5 × 104 s) but also shows robust flexibility under bending conditions and stable operation on arbitrary substrates. More importantly, direct observation of indium filaments in an ITO/hBN/graphene device is found via ex situ transmission electron microscopy, which provides critical insight on the complex resistive switching mechanisms.


ACS Applied Materials & Interfaces | 2017

Thermal Conductivity Enhancement of Coaxial Carbon@Boron Nitride Nanotube Arrays

Lin Jing; Majid Kabiri Samani; Bo Liu; Hongling Li; Roland Yingjie Tay; Siu Hon Tsang; Olivier Cometto; Andreas Nylander; Johan Liu; Edwin Hang Tong Teo; Alfred Iing Yoong Tok

We demonstrate the thermal conductivity enhancement of the vertically aligned carbon nanotube (CNT) arrays (from ∼15.5 to 29.5 W/mK, ∼90% increase) by encapsulating outer boron nitride nanotube (BNNT, 0.97 nm-thick with ∼3-4 walls). The heat transfer enhancement mechanism of the coaxial C@BNNT was further revealed by molecular dynamics simulations. Because of their highly coherent lattice structures, the outer BNNT serves as additional heat conducting path without impairing the thermal conductance of inner CNT. This work provides deep insights into tailoring the heat transfer of arbitrary CNT arrays and will enable their broader applications as thermal interface material.

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Edwin Hang Tong Teo

Nanyang Technological University

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Siu Hon Tsang

Nanyang Technological University

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Hongling Li

Nanyang Technological University

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Lin Jing

Nanyang Technological University

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Jinjun Lin

Nanyang Technological University

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Minmin Zhu

Nanyang Technological University

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Alfred Iing Yoong Tok

Nanyang Technological University

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Manuela Loeblein

Nanyang Technological University

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Dunlin Tan

Centre national de la recherche scientifique

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Ram Sevak Singh

Nanyang Technological University

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