Eiji Nishibe
Sanyo
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Publication
Featured researches published by Eiji Nishibe.
international symposium on circuits and systems | 1999
Takao Myono; Eiji Nishibe; Shuichi Kikuchi; K. Iwatsu; Takahide Suzuki; Yoshisato Sasaki; K. Itoh; Haruo Kobayashi
This paper presents a novel technique for modeling HV MOS devices accurately with the BSIM3v3 SPICE model. We assign different meanings from the original BSlM3v3 to three parameters. The simulated I-V characteristics using the extracted parameters match the measured results well, and the physical mechanism of HV MOS devices is clarified based on device simulations. Since our method does not change any model equations of BSIM3v3, it can be applied to any SPICE simulator on which the BSIM3v3 model runs.
IEICE Transactions on Electronics | 2001
Takao Myono; Akira Uemoto; Shuhei Kawai; Eiji Nishibe; Shuichi Kikuchi; Takashi Iijima; Haruo Kobayashi
Archive | 2002
Eiji Nishibe; Shuichi Kikuchi; Takao Maruyama
Electronics Letters | 1998
Takao Myono; Eiji Nishibe; K. Iwatsu; Shuichi Kikuchi; T. Suzuki; Yoshisato Sasaki; K. Itoh; Haruo Kobayashi
Archive | 2001
Eiji Nishibe; Shuichi Kikuchi; Takuya Suzuki
Archive | 2001
Shuichi Kikuchi; Eiji Nishibe; Takuya Suzuki
Archive | 2004
Eiji Nishibe; Toshihiro Hachiyanagi
Archive | 2001
Shuichi Kikuchi; Eiji Nishibe; Takuya Suzuki
Electronics Letters | 1999
Takao Myono; Eiji Nishibe; Shuichi Kikuchi; K. Iwatsu; T. Suzuki; Yoshisato Sasaki; K. Itoh; Haruo Kobayashi
Archive | 2003
Eiji Nishibe; Shuichi Kikuchi; Takuya Suzuki
