Ej Erik Jan Geluk

Lasing in metal-insulator-metal sub-wavelength plasmonic waveguides

We demonstrate lasing in Metal-Insulator-Metal (MIM) waveguides filled with electrically pumped semiconductor cores, with core width dimensions below the diffraction limit. Furthermore these waveguides propagate a transverse magnetic (TM0) or so called gap plasmon mode [1-4]. Hence we show that losses in sub-wavelength MIM waveguides can be overcome to create small plasmon mode lasers at wavelengths near 1500 nm. We also give results showing room temperature lasing in MIM waveguides, with approximately 310 nm wide semiconductor cores which propagate a transverse electric mode.

Plasmonic distributed feedback lasers at telecommunications wavelengths

We investigate electrically pumped, distributed feedback (DFB) lasers, based on gap-plasmon mode metallic waveguides. The waveguides have nano-scale widths below the diffraction limit and incorporate vertical groove Bragg gratings. These metallic Bragg gratings provide a broad bandwidth stop band (~500 nm) with grating coupling coefficients of over 5000/cm. A strong suppression of spontaneous emission occurs in these Bragg grating cavities, over the stop band frequencies. This strong suppression manifests itself in our experimental results as a near absence of spontaneous emission and significantly reduced lasing thresholds when compared to similar length Fabry-Pérot waveguide cavities. Furthermore, the reduced threshold pumping requirements permits us to show strong line narrowing and super linear light current curves for these plasmon mode devices even at room temperature.

Short Polarization Converter Optimized for Active–Passive Integration in InGaAsP–InP

An improved design for an integrated polarization converter is presented. The device is designed for monolithic integration with active and passive components on InP-InGaAsP. A novel simplified fabrication process is demonstrated. Measured polarization conversion >97% over a wavelength range of >35 nm agrees well with simulations.

Organic electronic ratchets doing work

The possibility to extract work from periodic, undirected forces has intrigued scientists for over a century—in particular, the rectification of undirected motion of particles by ratchet potentials, which are periodic but asymmetric functions. Introduced by Smoluchowski and Feynman to study the (dis)ability to generate motion from an equilibrium situation, ratchets operate out of equilibrium, where the second law of thermodynamics no longer applies. Although ratchet systems have been both identified in nature and used in the laboratory for the directed motion of microscopic objects, electronic ratchets have been of limited use, as they typically operate at cryogenic temperatures and generate subnanoampere currents and submillivolt voltages. Here, we present organic electronic ratchets that operate up to radio frequencies at room temperature and generate currents and voltages that are orders of magnitude larger. This enables their use as a d.c. power source. We integrated the ratchets into logic circuits, in which they act as the d.c. equivalent of the a.c. transformer, and generate enough power to drive the circuitry. Our findings show that electronic ratchets may be of actual use.

Fullerene-assisted electron-beam lithography for pattern improvement and loss reduction in InP membrane waveguide devices

In this Letter, we present a method to prepare a mixed electron-beam resist composed of a positive resist (ZEP520A) and C60 fullerene. The addition of C60 to the ZEP resist changes the material properties under electron beam exposure significantly. An improvement in the thermal resistance of the mixed material has been demonstrated by fabricating multimode interference couplers and coupling regions of microring resonators. The fabrication of distributed Bragg reflector structures has shown improvement in terms of pattern definition accuracy with respect to the same structures fabricated with normal ZEP resist. Straight InP membrane waveguides with different lengths have been fabricated using this mixed resist. A decrease of the propagation loss from 6.6 to 3.3  dB/cm has been demonstrated.

Deep Etched DBR Gratings in InP for Photonic Integrated Circuits

A novel fabrication process was developed to realize high quality SiOx masks for CI2 based ICP etching of InP. First order DBR mirrors, 3 mum deep, were realized that can be used in photonic circuits. The process can be used in combination with conventional optical lithography, reducing production cost.

Transmission of pillar-based photonic crystal waveguides in InP technology

Waveguides based on line defects in pillar photonic crystals have been fabricated in InP∕InGaAsP∕InP technology. Transmission measurements of different line defects are reported. The results can be explained by comparison with two-dimensional band diagram simulations. The losses increase substantially at mode crossings and in the slow light regime. The agreement with the band diagrams implies a good control on the dimensions of the fabricated features, which is an important step in the actual application of these devices in photonic integrated circuits.

Distribution control of 1.55 μm InAs quantum dots down to small numbers on truncated InP pyramids grown by selective area metal organic vapor phase epitaxy

Distribution control of InAs quantum dots (QDs) on truncated InP pyramids by selective area growth is reported. The top surface of the pyramids is composed of a (100) facet and high-index facets aside. The arrangement of the facets is governed by the shape of the pyramid base and top surface area. The QDs preferentially nucleate on the high-index facets determining position and distribution. The QD number is reduced with shrinking top surface size. Positioning of four, three, two, and single QDs is realized depending on the top surface’s shape and size. Emission from single QDs is observed at 1.55μm.

Surface plasmon dispersion in metal hole array lasers

We experimentally study surface plasmon lasing in a series of metal hole arrays on a gold-semiconductor interface. The sub-wavelength holes are arranged in square arrays of which we systematically vary the lattice constant and hole size. The semiconductor medium is optically pumped and operates at telecom wavelengths (λ ~ 1.5 μm). For all 9 studied arrays, we observe surface plasmon (SP) lasing close to normal incidence, where different lasers operate in different plasmonic bands and at different wavelengths. Angle- and frequency-resolved measurements of the spontaneous emission visualizes these bands over the relevant (ω, k||) range. The observed bands are accurately described by a simple coupled-wave model, which enables us to quantify the backwards and right-angle scattering of SPs at the holes in the metal film.

Realization of efficient metal grating couplers for membrane-based integrated photonics

Grating couplers are widely used to couple light between photonic integrated circuits and optical fibers. Here, we fabricate and characterize a device based on a buried metal grating. In contrast to dielectric gratings, simulations predict strongly reduced parasitic leakage of light to the substrate and are performance independent of the optical buffer thickness, while using standard fabrication processes with high yield. The gratings show a 3 dB bandwidth of 61 nm and chip-to-fiber coupling efficiency of 54%, which makes them attractive building blocks for on-wafer testing and dense optical interconnects.