Ys Yok-Siang Oei

A fast low-power optical memory based on coupled micro-ring lasers

The increasing speed of fibre-optic-based telecommunications has focused attention on high-speed optical processing of digital information. Complex optical processing requires a high-density, high-speed, low-power optical memory that can be integrated with planar semiconductor technology for buffering of decisions and telecommunication data. Recently, ring lasers with extremely small size and low operating power have been made, and we demonstrate here a memory element constructed by interconnecting these microscopic lasers. Our device occupies an area of 18 × 40 µm2 on an InP/InGaAsP photonic integrated circuit, and switches within 20 ps with 5.5 fJ optical switching energy. Simulations show that the element has the potential for much smaller dimensions and switching times. Large numbers of such memory elements can be densely integrated and interconnected on a photonic integrated circuit: fast digital optical information processing systems employing large-scale integration should now be viable.

Photoluminescence characterization of Er-implanted Al2O3 films

Al2O3 films on oxidized Si substrates were implanted with 800 keV Er ions to peak concentrations ranging from 0.01 to 1 at. %. The samples show relatively broad photoluminescence spectra centered at λ=1.533 μm, corresponding to intra‐4f transitions in Er3+. At an Er peak concentration of 0.23 at. %, post‐implantation thermal annealing up to 950 °C increases the photoluminescence intensity by a factor 40. This is a result of defect annealing, which increases the luminescence lifetime from 1 to 7 ms, as well as an increase in the Er3+ active fraction. High Er concentrations are achieved with only moderate concentration quenching effects.

Lasing of wavelength-tunable (1.55μm region) InAs∕InGaAsP∕InP (100) quantum dots grown by metal organic vapor-phase epitaxy

The authors report lasing of InAs∕InGaAsP∕InP (100) quantum dots (QDs) wavelength tuned into the 1.55μm telecom region. Wavelength control of the InAs QDs in an InGaAsP∕InP waveguide is based on the suppression of As∕P exchange through ultrathin GaAs interlayers. The narrow ridge-waveguide QD lasers operate in continuous wave mode at room temperature on the QD ground state transition. The low threshold current density of 580A∕cm2 and low transparency current density of 6A∕cm2 per QD layer, measured in pulsed mode, are accompanied by low loss and high gain with an 80-nm-wide gain spectrum.

Extremely small multimode interference couplers and ultrashort bends on InP by deep etching

We realized the smallest integrated optical multimode interference (MMI) couplers to date by etching through the quaternary guiding layer, maximizing the lateral index contrast, and thus obtaining a sufficient number of guided modes for proper operation despite the small size. Results include a 107 /spl mu/m long 3 dB coupler with 0.9 dB excess loss and 0.2 dB unbalance, and a 216 /spl mu/m long cross coupler with 2.0 dB excess loss and -28 dB crosstalk (TE). We also succeeded in making waveguide bends with a record bending radius of only 30 /spl mu/m and negligible radiation loss.<<ETX>>

First InP-based reconfigurable integrated add-drop multiplexer

A four-channel reconfigurable integrated add-drop multiplexer on InP-substrate is reported. The device consists of a 5/spl times/5 PHASAR demultiplexer integrated with Mach-Zehnder interferometer electrooptical switches. Total device size is 3/spl times/6 mm/sup 2/. All routing configurations of four wavelengths have been demonstrated. Crosstalk values are better than -20 dB. On-chip loss for the dropped or added signals and for the signals coupled from the input to the output port are lower than 7 and 11 dB, respectively.

Observation of Q-switching and mode-locking in two-section InAs/InP (100) quantum dot lasers around 1.55 µm

First observation of passive mode-locking in two-section quantum-dot lasers operating at wavelengths around 1.55 mum is reported. Pulse generation at 4.6 GHz from a 9 mm long device is verified by background-free autocorrelation, RF-spectra and real-time oscilloscope traces. The output pulses are stretched in time and heavily up-chirped with a value of 20 ps/nm, contrary to what is normally observed in passively mode-locked semiconductor lasers. The complete output spectrum is shown to be coherent over 10 nm. From a 7 mm long device Q-switching is observed over a large operating regime. The lasers have been realized using a fabrication technology that is compatible with further photonic integration. This makes the laser a promising candidate for e.g. a mode-comb generator in a complex photonic chip.

A compact integrated InP-based single-phasar optical crossconnect

The first integrated InP-based polarization independent optical crossconnect is reported. The device can crossconnect signals at four wavelengths independently from two input fibers to two output fibers. Total on-chip loss is less then 16 dB. Device size is 7/spl times/9 mm/sup 2/.

Self Assembled InAs/InP Quantum Dots for Telecom Applications in the 1.55 µm Wavelength Range: Wavelength Tuning, Stacking, Polarization Control, and Lasing

Wavelength-tunable InAs quantum dots (QDs) embedded in lattice-matched InGaAsP on InP(100) substrates are grown by metalorganic vapor-phase epitaxy (MOVPE). As/P exchange, which causes a QD size and an emission wavelength that are very large, is suppressed by decreasing the QD growth temperature and V–III flow ratio. As/P exchange, QD size and emission wavelength are then reproducibly controlled by the thickness of ultrathin [0–2 monolayers (ML)] GaAs interlayers underneath the QDs. Submonolayer GaAs coverages result in a shape transition from QDs to quantum dashes for a low V–III flow ratio. It is the combination of reduced growth temperature and V–III flow ratio with the insertion of GaAs interlayers of greater than 1 ML thickness which allows the tuning of the emission wavelength of QDs at room temperature in the 1.55 µm wavelength range. Temperature-dependent photoluminescence (PL) measurements reveal the excellent optical properties of the QDs. Widely stacked QD layers are reproduced with identical PL emission to increase the active volume while closely stacked QD layers reveal a systematic PL redshift and linewidth reduction due to vertical electronic coupling, which is proven by the fact that the linear polarization of the cleaved-side PL changes from in-plane to isotropic. Ridge-waveguide laser diodes with stacked QD layers for their active regions exhibit threshold currents at room temperature in continuous-wave mode that are among the lowest threshold currents achieved for InAs/InP QD lasers operating in the 1.55 µm wavelength range.

Integrated two-state AWG-based multiwavelength laser

An integrated InP-InGaAsP two-state coupled-laser device for use in optical packet switching and signal processing is presented. The two states are identified by distinct lasing wavelengths. Single-mode lasing occurs in both states and the contrast ratio between the two states is 35 dB. Switching between states with optical pulses is demonstrated. The use of an arrayed waveguide grating (AWG) and ring laser configuration permits monolithic integration without the need for cleaved facets. How the AWG can be used to obtain partial isolation between multiple interconnected devices is also discussed.

Monolithic AWG-based Discretely Tunable Laser Diode With Nanosecond Switching Speed

A novel concept for an arrayed-waveguide-grating (AWG)-based fast tunable laser is presented. It is fabricated in the InP-InGaAsP monolithic integration technology. Laser peaks have a sidemode suppression ratio of 30-40 dB. The wavelength switching speed is in the order of a few nanoseconds and switching is achieved by a 1-mA bias current. The switching between AWG channels is discrete and no laser operation takes place at wavelengths corresponding to other channels during the tuning process.