Elisabetta Arca

Magnesium, nitrogen codoped Cr2O3: A p-type transparent conducting oxide

A p-type transparent conductive oxide (TCO) was synthesised by codoping of poorly conducting chromium oxide (Cr2O3) with magnesium and nitrogen. We demonstrated that the codoping produced a TCO with good figure of merit despite using spray pyrolysis for deposition. The nitrogen enhances the specular transparency of the films in the visible range (400-700 nm), and Mg improves the conductivity while retaining the p-type character of the material. Co-doping with both elements produces a p-type oxide with a low resistivity of 3 Ω cm and transmission up to 65% for a 150 nm thick film. A comparison with other known p-type materials is given.

Aluminium doped Zn1−xMgxO—A transparent conducting oxide with tunable optical and electrical properties

A ternary mixed oxide Zn1−xMgxO has been doped with aluminium to create a range of transparent conducting oxides with tunable refractive index as well as work function. Conductive material was synthesised up to a magnesium concentration of x = 0.45, although the conductivity is reduced compared to standard ZnO:Al. The changes in band gap, work function, and conductivity have been attributed to a modified band structure and energetic position of the aluminium induced donor state.

Assessing the potential of Mg-doped Cr₂O₃ as a novel p-type transparent conducting oxide.

One of the current challenges faced by material scientists is the development of a p-type transparent conducting oxide with levels of optical transparency and electronic conductivity to equal those of the universally n-type industry leaders such as Sn-doped In2O3. The discovery of a p-type analogue would allow for the combination of both polarities into a heterojunction, accessing the potential for transparent electronics. In this study, an insulating material, Cr2O3, is investigated both experimentally and computationally to determine if it is a viable p-type host matrix as has been recently proposed in the literature. The geometric and electronic structure are examined by high resolution x-ray diffraction, x-ray photoelectron spectroscopy, and periodic density functional theory (specifically, PBE  +  U). By incorporating Mg and performing a comprehensive defect analysis, the dominant intrinsic and extrinsic carriers in the material are determined, and it is shown that Cr2O3 has the potential to display p-type conductivity when appropriately doped.

Band alignment at the interface between Ni-doped Cr2O3 and Al-doped ZnO: implications for transparent p-n junctions.

The realization of transparent electronic and optoelectronic devices requires the use of transparent p-n junctions. In this context, understanding the band alignment at the interface between the p- and n-components represents a fundamental step towards the realization of high performance devices. In this work, the band alignment at the interface between Al-doped ZnO (AZO) and Ni-doped Cr2O3 has been analysed. The formation and evolution of the core levels as the interface progressively forms have been followed by means of x-ray Photoelectron Spectroscopy, x-ray diffraction and x-ray reflectivity. A type two (staggered) band alignment was identified, with the valence band offset and conduction band offset found to be 2.6 eV and 2.5 eV, respectively. The electrical behaviour will be discussed in terms of the position of the bands, the presence of band bending and the expected built-in potential and how these can be engineered in order to achieve the maximum performance for this hetero-structure.

Valence band modification of Cr2O3 by Ni-doping: creating a high figure of merit p-type TCO

p-Type transparent conductors and semiconductors still suffer from remarkably low performance compared to their more widespread n-type counterparts, despite extensive investigation into their development. In this contribution, we present a comparative study on the defect chemistry of potential p-type transparent conducting oxides Mg-doped and Ni-doped Cr2O3. Conductivities as high as 28 S cm−1 were achieved by Ni-doping. By benchmarking crystallography and spectroscopy characterization against density functional theory calculations, we show that the incorporation of Ni into Cr2O3 contributes to the composition of the valence band, making the formed holes more delocalized, while Mg states do not interact with the valence band in Mg-doped Cr2O3. Furthermore, it is experimentally proven that Ni has a higher solubility in Cr2O3 than Mg, at least in the highly non-thermodynamic deposition conditions used for these experiments, which directly translates into a higher acceptor concentration. The combination of these two effects means that Ni is a more effective acceptor in Cr2O3 than Mg and explains the improved conductivity observed for the former.

The Synthesis of Nanostructured and Nanometer-Sized Systems

The present chapter deals with the difficult task of giving a brief survey of the synthetic routes employed to prepare materials with characteristic features on the nanometer scale. Definitions and general concepts regarding nanostructured and nanometer-sized materials are shortly tackled in the introductory part, which is followed by an overview of the most important approaches developed to synthesize such materials. No attempt is made to create a comprehensive and detailed synopsis of the experimental methods currently available. Rather, attention is focused on a selected number of general methodologies, the choice of which can be usually motivated by a mix of historical perspective, scientific significance and technological potential. So-called “top-down” approaches are discussed first, whereas the second part of the chapter is devoted to “bottom-up” ones. The former group includes mechanical processing, melt quenching, and de-vitrification methods. Sonochemistry, pulsed laser ablation, wet chemical synthesis, sol-gel processing, microwave processing, spray pyrolysis, flame synthesis, inert gas condensation, vapor deposition, and vapor-liquid-solid growth form instead the latter group.